Abstract: In an electronic unit with a substrate, a control circuit is mounted on the substrate and is configured to execute an operation related to a load. A package encapsulates the control circuit and the substrate. The package has sides around a periphery of the substrate. At least one input terminal for input of a signal externally sent to the electronic unit is disposed on at least one of the plurality of surfaces. At least one output terminal for output of a control signal for controlling the load is disposed on at least another one of the plurality of surfaces. At least one check terminal for input/output of a signal for checking at least the control circuit is disposed on at least another one of the plurality of surfaces.

Abstract: An electric device includes: a first electric element; a second electric element capable of flowing large current therethrough so that heat is generated in the second electric element; a heat sink; and a first wiring board and a second wiring board, which are disposed on one side of the heat sink. The large current in the second electric element is larger than that in the first electric element. The first wiring board and the second wiring board are separated each other. The first electric element is disposed on the first wiring board, and the second electric element is disposed on the second wiring board.

Abstract: In order to protect semiconductor switching-devices employed in an H bridge circuit against an over-voltage without using a special protection circuit, a control circuit outputs a control signal to a driving circuit for driving the H bridge circuit in order to turn off FETs serving as the semiconductor switching-devices when an over-voltage detection circuit detects the over-voltage applied to the H bridge circuit.

Abstract: When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.

Abstract: When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating. film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.

Abstract: A current control circuit controls a gate potential of a transistor to equalize a load current IL with a trapezoidal wave signal Sb. The trapezoidal wave signal Sb increases at a constant gradient when a drive command signal Sa turns into H level. Due to increase of load current IL, the transistor starts operating in a linear region and a gate voltage VGS abruptly increases. A saturation state detecting circuit turns a current saturation signal Sc into L level when the gate voltage VGS exceeds a reference voltage Vr. A trapezoidal wave generating circuit stops increase of trapezoidal wave signal Sb. When drive command signal Sa turns into L level, the trapezoidal wave signal Sb decreases at a constant gradient. The load current IL decreases according to reduction of trapezoidal wave signal Sb.

Abstract: When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.

Abstract: A power MOS transistor formed of an array of source cells and drain cells on an IC chip substrate has a plurality of substrate contact cells, each formed external to the source cells, having respective substrate potential-setting electrodes to which an externally supplied substrate bias voltage can be applied, enabling the substrate potential to be set independently of the source potential of the transistor. It thereby becomes possible to modify the threshold voltage of the transistor or maintain a constant potential difference between the substrate potential and that of a gate input signal. Since the requirement for a substrate contact region within each source cell is eliminated, and the number of substrate contact cells can be fewer than that of the source cells, the chip area occupied by the transistor can be reduced by comparison with a prior art configuration providing such a substrate potential control capability.

Abstract: A current control circuit controls a gate potential of a transistor to equalize a load current IL with a trapezoidal wave signal Sb. The trapezoidal wave signal Sb increases at a constant gradient when a drive command signal Sa turns into H level. Due to increase of load current IL, the transistor starts operating in a linear region and a gate voltage VGS abruptly increases. A saturation state detecting circuit turns a current saturation signal Sc into L level when the gate voltage VGS exceeds a reference voltage Vr. A trapezoidal wave generating circuit stops increase of trapezoidal wave signal Sb. When drive command signal Sa turns into L level, the trapezoidal wave signal Sb decreases at a constant gradient. The load current IL decreases according to reduction of trapezoidal wave signal Sb.

Abstract: When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.

Abstract: An automotive occupant restraint system with a simple and compact energy reserve circuit is provided which includes an occupant restraint mechanism, a step-up circuit, a backup capacitor, a crash monitor, a firing circuit, and a switching circuit. The step-up circuit steps up the voltage supplied from a battery to charge the backup capacitor up to a given voltage level. The crash monitor monitors a vehicle crash to provide a crash signal. The firing circuit is responsive to the crash signal to activate the occupant restraint mechanism. The switching circuit selects between a first and a second power supply mode.

Abstract: A drive circuit for a vehicle occupant safety apparatus includes a device for activating the vehicle occupant safety apparatus. A first transistor is connected in series with the device. A constant-current circuit receives electric energy from a power supply, and feeds a constant current to the device when the first transistor falls into its on state. The constant-current circuit includes a second transistor connected in series with the device. The second transistor includes an N-channel field-effect transistor. A third transistor is connected to the second transistor. The second and third transistors form a current mirror circuit. The third transistor includes an N-channel field-effect transistor. A voltage between a gate and a source of the third transistor is regulated at a constant level. Gate voltages of the second and third transistors are controlled in response to source voltages of the second and third transistors to equalize the source voltages of the second and third transistors.

Abstract: A load current supply circuit having a current sensing function is composed of a current mirror circuit which includes a power transistor circuit and a sense transistor circuit both connected in parallel with each other, and a current detection circuit connected to the sense transistor circuit. Load current is drawn through the power transistor while sensing current which is proportional to the load current and is much less than the load current flows through the sense transistor. The current detection circuit detects the load current based on the sensing current. A current mirror ratio has to be constant under a wide range of ambient temperature in order to secure a current sensing accuracy. To maintain the current mirror ratio at a substantially constant level, a resistance ratio of wiring resistance to transistor ON-resistance in the sense transistor circuit is made substantially equal to that in the power transistor circuit.