Patents by Inventor Nobuo Fukuto

Nobuo Fukuto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030116083
    Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.
    Type: Application
    Filed: November 27, 2002
    Publication date: June 26, 2003
    Applicant: SUMCO Oregon corporation
    Inventors: Fritz G. Kirscht, Peter D. Wildes, Volker R. Todt, Nobuo Fukuto, Boris A. Snegirev, Seung-Bae Kim
  • Patent number: 6491752
    Abstract: An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.
    Type: Grant
    Filed: July 16, 1999
    Date of Patent: December 10, 2002
    Assignee: SUMCO Oregon Corporation
    Inventors: Fritz G. Kirscht, Peter D. Wildes, Volker R. Todt, Nobuo Fukuto, Boris A. Snegirev, Seung-Bae Kim