Patents by Inventor Nobuo Ishii

Nobuo Ishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200163970
    Abstract: Provided is a novel compound or salt thereof that induces degradation by autophagy of an intracellular molecule. In this compound, a ligand having activity to bind to an intracellular molecule and a structure having activity to induce autophagy of an intracellular molecule are linked via a linker without loss of the activity of the ligand and the structure.
    Type: Application
    Filed: February 2, 2018
    Publication date: May 28, 2020
    Inventors: Hirokazu ARIMOTO, Kaori ITTO, Daiki TAKAHASHI, Nobuo CHO, Hiroshi NARA, Kenichiro SHIMOKAWA, Taiichi OHRA, Shigekazu SASAKI, Naoki ISHII
  • Patent number: 9127346
    Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: September 8, 2015
    Assignee: ISHIFUKU METAL INDUSTRY CO., LTD.
    Inventors: Koichi Hasegawa, Nobuo Ishii
  • Patent number: 8858877
    Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: October 14, 2014
    Assignee: Ishifuku Metal Industry Co., Ltd.
    Inventors: Koichi Hasegawa, Nobuo Ishii
  • Patent number: 8252127
    Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: August 28, 2012
    Assignee: Ishifuku Metal Industry Co., Ltd.
    Inventors: Koichi Hasegawa, Nobuo Ishii
  • Publication number: 20120070332
    Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
    Type: Application
    Filed: November 29, 2011
    Publication date: March 22, 2012
    Inventors: Koichi HASEGAWA, Nobuo ISHII
  • Publication number: 20110211988
    Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
    Type: Application
    Filed: May 6, 2011
    Publication date: September 1, 2011
    Inventors: Koichi HASEGAWA, Nobuo Ishii
  • Patent number: 7959746
    Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: June 14, 2011
    Assignee: Ishifuku Metal Industry Co., Ltd.
    Inventors: Koichi Hasegawa, Nobuo Ishii
  • Patent number: 7807019
    Abstract: Guide members (37) extending from the microwave entrance to a ring member (34) are arranged in the direction of propagation of microwave in a radial waveguide. The guide members (37) contribute to prevention of complex electromagnetic mode due to a microwave reflected from the peripheral portion of the radial waveguide. Therefore, a uniform plasma can be produced because the radiation into the process chamber is uniform even not by disposing any electromagnetic absorbing member at the peripheral portion of the radial waveguide. Since the microwave reflected from the peripheral portion of the radial waveguide can be used to produce a plasma if any electromagnetic absorbing member is not disposed, the plasma can be produced efficiently, and excessive heat is not generated.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: October 5, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Nobuo Ishii
  • Patent number: 7632379
    Abstract: A plasma source (1) is composed of a chamber (2) to which a gas should be supplied and a hollow cathode electrode member (4) which is arranged on the gas flow-out side of the chamber (2) and has a plurality of electrode holes (3) through which the gas can flow. In such a plasma source (1), microcathode plasma discharge can be performed in the electrode holes (3) of the hollow cathode electrode member (4).
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: December 15, 2009
    Assignees: Tokyo Electron Limited, Katagiri Engineering Co., Ltd.
    Inventors: Toshio Goto, Masaru Hori, Nobuo Ishii, Shoji Den
  • Publication number: 20090051924
    Abstract: An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.
    Type: Application
    Filed: August 5, 2008
    Publication date: February 26, 2009
    Applicants: MASAFUMI ITO, TOKYO ELECTRON LIMITED
    Inventors: Masafumi ITO, Yasuyuki Okamura, Tatsuo Shiina, Nobuo Ishii, Tomohiro Suzuki, Chishio Koshimizu
  • Patent number: 7481904
    Abstract: An etching apparatus has an antenna connected to a radio frequency power supply through a matching box. At the center region of a dielectric plate, a columnar conductor and a cylindrical conduct ring are arranged. Between the columnar conductor and the conductor ring, four conducting wires, each of which forms a substantially circular loop outside the conductor ring, are connected in parallel with the radio frequency power supply. A loop formed by each of the conducting wires is arranged at an equal spacing with each other to be rotationally-symmetric around the axis orthogonal to a mounting table, with the columnar conductor as the center. The loops are arranged on the same plane such that a surface where each loop is placed faces the mounting table.
    Type: Grant
    Filed: March 18, 2002
    Date of Patent: January 27, 2009
    Assignee: Tokyo Electron Limited
    Inventor: Nobuo Ishii
  • Patent number: 7465424
    Abstract: Provided is a sputtering target material which has a high reflectance and which is excellent in a sulfurization resistance, comprising an Ag alloy prepared by alloying Ag with a specific small amount of the metal component (A) selected from In, Sn and Zn, a specific small amount of the metal component (B) selected from Au, Pd and Pt and, if necessary, a small amount of Cu.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: December 16, 2008
    Assignee: Ishifuku Metal Industry Co., Ltd.
    Inventors: Koichi Hasegawa, Nobuo Ishii, Tomoyoshi Asaki
  • Patent number: 7457721
    Abstract: Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained.
    Type: Grant
    Filed: April 22, 2005
    Date of Patent: November 25, 2008
    Assignee: The University of Electro-Communications
    Inventors: Mitsuo Takeda, Wei Wang, Nobuo Ishii, Yoko Miyamoto
  • Patent number: 7416330
    Abstract: The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
    Type: Grant
    Filed: August 4, 2005
    Date of Patent: August 26, 2008
    Assignees: Tokyo Electron Limited
    Inventors: Masafumi Ito, Yasuyuki Okamura, Tatsuo Shiina, Nobuo Ishii, Tomohiro Suzuki, Chishio Koshimizu
  • Patent number: 7395779
    Abstract: A first conductive plate (31A) constituting the radiation surface of a slot antenna (30A) inclines with respect to a first dielectric member (13) opposed to the radiation surface of the slot antenna (30A). Consequently, a plasma generated by the electric field of an electromagnetic field entering directly from the slot antenna (30A) can be set dominant over a plasma generated by the electric field of a standing wave formed in a processing vessel (11). Since the former can be controlled more easily than the latter, the plasma distribution can be improved.
    Type: Grant
    Filed: July 11, 2001
    Date of Patent: July 8, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Nobuo Ishii, Kibatsu Shinohara, Yasuyoshi Yasaka
  • Patent number: 7305934
    Abstract: A plasma processing apparatus includes a table (22) on which a processing target (W) is to be placed, a processing vessel (11) where the table is to be accommodated, and a power feed unit (40) for supplying a high-frequency electromagnetic field (F) into the processing vessel. The power supply unit includes at least a cylindrical waveguide (41) for introducing the high-frequency electromagnetic field, and a circular polarization antenna (51) arranged at one end of the cylindrical waveguide to supply the high-frequency electromagnetic field as a rotating electromagnetic field rotating in a plane perpendicular to its traveling direction. Accordingly, there is no need of providing a circular polarization converter for converting the high-frequency electromagnetic field in the cylindrical waveguide into the rotating electromagnetic field.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: December 11, 2007
    Assignee: Tokyo Electron Limited
    Inventor: Nobuo Ishii
  • Patent number: 7302910
    Abstract: A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromagnetic field into the container (11) through the dielectric member (13), and a shield member (12) covering the outer periphery of the dielectric member (13) and shielding the electromagnetic field. A distance L1 from an inner surface of the container (11) to an inner surface of the shield member (12) at an end surface of the container (11) is approximately N/2 (N is an integer not smaller than 0) times the wavelength of the electromagnetic field in an area (18) surrounded by the end surface of the container (11), the electromagnetic field supplying means and the shield member (12).
    Type: Grant
    Filed: February 15, 2002
    Date of Patent: December 4, 2007
    Assignee: Tokyo Electron Limited
    Inventor: Nobuo Ishii
  • Patent number: 7296533
    Abstract: A plasma device includes a first conductive plate (31) in which a plurality of slots (36) are formed, a second conductive plate (32) having a microwave inlet (35) and disposed opposite to the first conductive plate (31), a ring member (34) for connecting peripheral edges of the first and second conductive plates (31, 32), and a conductive adjusting member (37) provided on said second conductive plate (32) within a radial waveguide (33) formed by the first and second conductive plates (31, 32) and serving to adjust a distance (d1, d2) up to the first conductive plate (31). With this arrangement, a desired electric field radiation distribution can be obtained without inducing abnormal discharge.
    Type: Grant
    Filed: August 3, 2001
    Date of Patent: November 20, 2007
    Assignee: Tokyo Electron Limited
    Inventors: Nobuo Ishii, Kibatsu Shinohara
  • Publication number: 20070219745
    Abstract: Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained.
    Type: Application
    Filed: April 22, 2005
    Publication date: September 20, 2007
    Applicant: The University of Electro-Communications
    Inventors: Mitsuo Takeda, Wei Wang, Nobuo Ishii, Yoko Miyamoto
  • Patent number: RE40963
    Abstract: A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: November 10, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Nobuo Ishii, Jiro Hata