Patents by Inventor Nobuo Ishii
Nobuo Ishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9127346Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.Type: GrantFiled: November 29, 2011Date of Patent: September 8, 2015Assignee: ISHIFUKU METAL INDUSTRY CO., LTD.Inventors: Koichi Hasegawa, Nobuo Ishii
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Patent number: 8858877Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.Type: GrantFiled: December 3, 2012Date of Patent: October 14, 2014Assignee: Ishifuku Metal Industry Co., Ltd.Inventors: Koichi Hasegawa, Nobuo Ishii
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Patent number: 8252127Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.Type: GrantFiled: May 6, 2011Date of Patent: August 28, 2012Assignee: Ishifuku Metal Industry Co., Ltd.Inventors: Koichi Hasegawa, Nobuo Ishii
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Publication number: 20120070332Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.Type: ApplicationFiled: November 29, 2011Publication date: March 22, 2012Inventors: Koichi HASEGAWA, Nobuo ISHII
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Publication number: 20110211988Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Koichi HASEGAWA, Nobuo Ishii
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Patent number: 7959746Abstract: This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.Type: GrantFiled: October 8, 2004Date of Patent: June 14, 2011Assignee: Ishifuku Metal Industry Co., Ltd.Inventors: Koichi Hasegawa, Nobuo Ishii
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Patent number: 7807019Abstract: Guide members (37) extending from the microwave entrance to a ring member (34) are arranged in the direction of propagation of microwave in a radial waveguide. The guide members (37) contribute to prevention of complex electromagnetic mode due to a microwave reflected from the peripheral portion of the radial waveguide. Therefore, a uniform plasma can be produced because the radiation into the process chamber is uniform even not by disposing any electromagnetic absorbing member at the peripheral portion of the radial waveguide. Since the microwave reflected from the peripheral portion of the radial waveguide can be used to produce a plasma if any electromagnetic absorbing member is not disposed, the plasma can be produced efficiently, and excessive heat is not generated.Type: GrantFiled: August 2, 2001Date of Patent: October 5, 2010Assignee: Tokyo Electron LimitedInventor: Nobuo Ishii
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Patent number: 7632379Abstract: A plasma source (1) is composed of a chamber (2) to which a gas should be supplied and a hollow cathode electrode member (4) which is arranged on the gas flow-out side of the chamber (2) and has a plurality of electrode holes (3) through which the gas can flow. In such a plasma source (1), microcathode plasma discharge can be performed in the electrode holes (3) of the hollow cathode electrode member (4).Type: GrantFiled: May 28, 2004Date of Patent: December 15, 2009Assignees: Tokyo Electron Limited, Katagiri Engineering Co., Ltd.Inventors: Toshio Goto, Masaru Hori, Nobuo Ishii, Shoji Den
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Publication number: 20090051924Abstract: An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.Type: ApplicationFiled: August 5, 2008Publication date: February 26, 2009Applicants: MASAFUMI ITO, TOKYO ELECTRON LIMITEDInventors: Masafumi ITO, Yasuyuki Okamura, Tatsuo Shiina, Nobuo Ishii, Tomohiro Suzuki, Chishio Koshimizu
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Patent number: 7481904Abstract: An etching apparatus has an antenna connected to a radio frequency power supply through a matching box. At the center region of a dielectric plate, a columnar conductor and a cylindrical conduct ring are arranged. Between the columnar conductor and the conductor ring, four conducting wires, each of which forms a substantially circular loop outside the conductor ring, are connected in parallel with the radio frequency power supply. A loop formed by each of the conducting wires is arranged at an equal spacing with each other to be rotationally-symmetric around the axis orthogonal to a mounting table, with the columnar conductor as the center. The loops are arranged on the same plane such that a surface where each loop is placed faces the mounting table.Type: GrantFiled: March 18, 2002Date of Patent: January 27, 2009Assignee: Tokyo Electron LimitedInventor: Nobuo Ishii
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Patent number: 7465424Abstract: Provided is a sputtering target material which has a high reflectance and which is excellent in a sulfurization resistance, comprising an Ag alloy prepared by alloying Ag with a specific small amount of the metal component (A) selected from In, Sn and Zn, a specific small amount of the metal component (B) selected from Au, Pd and Pt and, if necessary, a small amount of Cu.Type: GrantFiled: March 15, 2002Date of Patent: December 16, 2008Assignee: Ishifuku Metal Industry Co., Ltd.Inventors: Koichi Hasegawa, Nobuo Ishii, Tomoyoshi Asaki
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Patent number: 7457721Abstract: Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained.Type: GrantFiled: April 22, 2005Date of Patent: November 25, 2008Assignee: The University of Electro-CommunicationsInventors: Mitsuo Takeda, Wei Wang, Nobuo Ishii, Yoko Miyamoto
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Patent number: 7416330Abstract: The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.Type: GrantFiled: August 4, 2005Date of Patent: August 26, 2008Assignees: Tokyo Electron LimitedInventors: Masafumi Ito, Yasuyuki Okamura, Tatsuo Shiina, Nobuo Ishii, Tomohiro Suzuki, Chishio Koshimizu
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Patent number: 7395779Abstract: A first conductive plate (31A) constituting the radiation surface of a slot antenna (30A) inclines with respect to a first dielectric member (13) opposed to the radiation surface of the slot antenna (30A). Consequently, a plasma generated by the electric field of an electromagnetic field entering directly from the slot antenna (30A) can be set dominant over a plasma generated by the electric field of a standing wave formed in a processing vessel (11). Since the former can be controlled more easily than the latter, the plasma distribution can be improved.Type: GrantFiled: July 11, 2001Date of Patent: July 8, 2008Assignee: Tokyo Electron LimitedInventors: Nobuo Ishii, Kibatsu Shinohara, Yasuyoshi Yasaka
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Patent number: 7305934Abstract: A plasma processing apparatus includes a table (22) on which a processing target (W) is to be placed, a processing vessel (11) where the table is to be accommodated, and a power feed unit (40) for supplying a high-frequency electromagnetic field (F) into the processing vessel. The power supply unit includes at least a cylindrical waveguide (41) for introducing the high-frequency electromagnetic field, and a circular polarization antenna (51) arranged at one end of the cylindrical waveguide to supply the high-frequency electromagnetic field as a rotating electromagnetic field rotating in a plane perpendicular to its traveling direction. Accordingly, there is no need of providing a circular polarization converter for converting the high-frequency electromagnetic field in the cylindrical waveguide into the rotating electromagnetic field.Type: GrantFiled: December 18, 2002Date of Patent: December 11, 2007Assignee: Tokyo Electron LimitedInventor: Nobuo Ishii
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Patent number: 7302910Abstract: A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromagnetic field into the container (11) through the dielectric member (13), and a shield member (12) covering the outer periphery of the dielectric member (13) and shielding the electromagnetic field. A distance L1 from an inner surface of the container (11) to an inner surface of the shield member (12) at an end surface of the container (11) is approximately N/2 (N is an integer not smaller than 0) times the wavelength of the electromagnetic field in an area (18) surrounded by the end surface of the container (11), the electromagnetic field supplying means and the shield member (12).Type: GrantFiled: February 15, 2002Date of Patent: December 4, 2007Assignee: Tokyo Electron LimitedInventor: Nobuo Ishii
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Patent number: 7296533Abstract: A plasma device includes a first conductive plate (31) in which a plurality of slots (36) are formed, a second conductive plate (32) having a microwave inlet (35) and disposed opposite to the first conductive plate (31), a ring member (34) for connecting peripheral edges of the first and second conductive plates (31, 32), and a conductive adjusting member (37) provided on said second conductive plate (32) within a radial waveguide (33) formed by the first and second conductive plates (31, 32) and serving to adjust a distance (d1, d2) up to the first conductive plate (31). With this arrangement, a desired electric field radiation distribution can be obtained without inducing abnormal discharge.Type: GrantFiled: August 3, 2001Date of Patent: November 20, 2007Assignee: Tokyo Electron LimitedInventors: Nobuo Ishii, Kibatsu Shinohara
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Publication number: 20070219745Abstract: Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained.Type: ApplicationFiled: April 22, 2005Publication date: September 20, 2007Applicant: The University of Electro-CommunicationsInventors: Mitsuo Takeda, Wei Wang, Nobuo Ishii, Yoko Miyamoto
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Patent number: 7243610Abstract: A plasma device includes a slot antenna (30) for supplying a high frequency electromagnetic field (F) supplied through a feeding part into a processing vessel (11). The feeding part has a cavity (35) for forming a resonator and converting the fed high frequency electromagnetic field (F) into a rotating electromagnetic field and supplying the rotating electromagnetic field to the slot antenna (30).Type: GrantFiled: January 18, 2002Date of Patent: July 17, 2007Assignees: Tokyo Electron LimitedInventors: Nobuo Ishii, Makoto Ando, Masaharu Takahashi
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Patent number: RE40963Abstract: A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber, supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.Type: GrantFiled: July 24, 2003Date of Patent: November 10, 2009Assignee: Tokyo Electron LimitedInventors: Nobuo Ishii, Jiro Hata