Patents by Inventor Nobuo Kawahashi

Nobuo Kawahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7550020
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: June 23, 2009
    Assignee: JSR Corporation
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7498294
    Abstract: The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.
    Type: Grant
    Filed: February 9, 2005
    Date of Patent: March 3, 2009
    Assignee: JSR Corporation
    Inventors: Tomohisa Konno, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
  • Publication number: 20080274620
    Abstract: A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.
    Type: Application
    Filed: June 30, 2008
    Publication date: November 6, 2008
    Applicant: JSR CORPORATION
    Inventors: Hirotaka SHIDA, Tomohisa Konno, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7442116
    Abstract: A chemical mechanical polishing pad having a face for polishing an object to be polished, a non-polishing face opposite to the face and a side face for interconnecting these faces and including the pattern of recessed portions which are formed on the non-polishing face and are open to the non-polishing face but not on the side face.
    Type: Grant
    Filed: November 2, 2004
    Date of Patent: October 28, 2008
    Assignee: JSR Corporation
    Inventors: Hiroyuki Miyauchi, Hiroshi Shiho, Nobuo Kawahashi
  • Patent number: 7378349
    Abstract: Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
    Type: Grant
    Filed: April 11, 2005
    Date of Patent: May 27, 2008
    Assignee: JSR Corporation
    Inventors: Tomohisa Konno, Hirotaka Shida, Kiyonobu Kubota, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7323415
    Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (?-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: January 29, 2008
    Assignee: JSR Corporation
    Inventors: Hiroshi Shiho, Yukio Hosaka, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 7252782
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: August 7, 2007
    Assignee: JSR Corporation
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7183211
    Abstract: The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process.
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: February 27, 2007
    Assignee: JSR Corporation
    Inventors: Tomohisa Konno, Masayuki Motonari, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7183213
    Abstract: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: February 27, 2007
    Assignee: JSR Corporation
    Inventors: Hiroshi Shiho, Yukio Hosaka, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 7163448
    Abstract: A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 ?/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 ?/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: January 16, 2007
    Assignee: JSR Corporation
    Inventors: Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7153369
    Abstract: It is an object of the invention to provide an aqueous dispersion for CMP that produces no scratches on polishing surfaces and that polishes with an adequate rate, when used for polishing of copper and the like. The aqueous dispersion of the invention contains water and polymer particles composed of a polymer with a specific functional group, and it may also contain a complexing agent, a compound that forms a passivation film on polishing surfaces and/or an oxidizing agent. The specific functional group is a functional group that can react with the metals of polishing surfaces or that can form a cation, and it is preferably selected from among amino, pyridyl and acrylamide groups. The polymer can be obtained using a initiator and/or monomer possessing the specific functional group. The polymer may also have a crosslinked structure.
    Type: Grant
    Filed: July 23, 2002
    Date of Patent: December 26, 2006
    Assignee: JSR Corporation
    Inventors: Masayuki Motonari, Masayuki Hattori, Nobuo Kawahashi
  • Publication number: 20060276041
    Abstract: A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt % and the component (B) in an amount of 0.005 to 1.5 wt %, having a ratio (WA/WB) of the amount (WA) of the component (A) to the amount (WB) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0.
    Type: Application
    Filed: May 15, 2006
    Publication date: December 7, 2006
    Applicant: JSR CORPORATION
    Inventors: Kazuhito Uchikura, Tomohisa Konno, Nobuo Kawahashi, Masayuki Hattori
  • Publication number: 20060201914
    Abstract: A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10 wt %.
    Type: Application
    Filed: March 8, 2006
    Publication date: September 14, 2006
    Applicant: JSR Corporation
    Inventors: Kazuhito Uchikura, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7090786
    Abstract: The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1, 3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B) is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.
    Type: Grant
    Filed: June 29, 2004
    Date of Patent: August 15, 2006
    Assignee: JSR Corporation
    Inventors: Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7087530
    Abstract: The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 ?m or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: August 8, 2006
    Assignees: JSR Corporation, Kabushiki Kaisha Toshiba
    Inventors: Masayuki Motonari, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 7077879
    Abstract: An object of the invention is to provide a polishing pad having the excellent slurry retaining properties and the large removal rate and a composition for a polishing pad which can form such the polishing pad. A composition for polishing pad of the invention is comprising a water-insoluble matrix material containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix material. The elongation remaining after breaking is 100% or less when a test piece comprising the water-insoluble matrix material is broken at 80° C. according to JIS K 6251. A polishing pad of the invention is that at least a part of the polishing pad comprises the composition for polishing pad.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: July 18, 2006
    Assignee: JSR Corporation
    Inventors: Toshihiro Ogawa, Kou Hasegawa, Nobuo Kawahashi
  • Publication number: 20060128271
    Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (?-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle.
    Type: Application
    Filed: April 23, 2004
    Publication date: June 15, 2006
    Applicant: JSR Corporation
    Inventors: Hiroshi Shiho, Yukio Hosaka, Kuo Hasegawa, Nobuo Kawahashi
  • Patent number: 7005382
    Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: February 28, 2006
    Assignees: JSR Corporation, Kabushiki Kaisha Toshiba
    Inventors: Kazuo Nishimoto, Tatsuaki Sakano, Akihiro Takemura, Masayuki Hattori, Nobuo Kawahashi, Naoto Miyashita, Atsushi Shigeta, Yoshitaka Matsui, Kazuhiko Ida
  • Patent number: 6992123
    Abstract: A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like. This polishing pad has good slurry retainability even if using slurries different in pH and also has excellent polishing properties such as a polishing rate and planarity.
    Type: Grant
    Filed: November 5, 2003
    Date of Patent: January 31, 2006
    Assignee: JSR Corporation
    Inventors: Hiroshi Shiho, Hiromi Aoi, Kou Hasegawa, Nobuo Kawahashi
  • Publication number: 20060010781
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.
    Type: Application
    Filed: July 14, 2005
    Publication date: January 19, 2006
    Applicant: JSR CORPORATION
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 5066790
    Abstract: A method of producing prepolymeric materials from lignin is disclosed. The method uses lignin which has been hydroxyalkyl modified, such that the lignin is substantially non-phenolic and solvent soluble and/or liquid. The modified lignin is reacted with materials which yield prepolymers which may be polymerized according to known methods to produce useful polymers.
    Type: Grant
    Filed: January 4, 1990
    Date of Patent: November 19, 1991
    Assignees: Center for Innovative Technology, Virginia Polytechnic Institute and State University
    Inventors: Wolfgang G. Glasser, Willer De Oliveira, Stephen S. Kelley, Li S. Nieh