Abstract: A data processing apparatus includes a first communication interface configured to acquire the history data; a memory configured to store the acquired history data; a data processing module configured to generate first data including the first identifier and the time information by using the acquired history data, and store the generated first data into the memory; an ID conversion processing module configured to generate second data by converting the first identifier into a second identifier, which is effective for the first data including the time information indicating a time that falls within a first period, and store the generated second data into the memory; and a maintenance module configured to delete the history data and the first data from the memory.

Abstract: A data processing apparatus includes a first communication interface configured to acquire the history data; a memory configured to store the acquired history data; a data processing module configured to generate first data including the first identifier and the time information by using the acquired history data, and store the generated first data into the memory; an ID conversion processing module configured to generate second data by converting the first identifier into a second identifier, which is effective for the first data including the time information indicating a time that falls within a first period, and store the generated second data into the memory; and a maintenance module configured to delete the history data and the first data from the memory.

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: An ion implantation method includes scanning reciprocatingly an ion beam in an X direction by an electric field or magnetic field and mechanically driving reciprocatingly a substrate in a Y direction orthogonal to the X direction to implant ions over the entire surface of the substrate. A dose distribution that is non-uniform within the plane of the substrate is formed within the plane of the substrate by changing at least one of a scanning speed of the ion beam and a driving speed of the substrate within an area where the ion beam is incident on the substrate.

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection

Abstract: The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Abstract: The present invention relates to a new means for the treatment of focal ischemic cerebral infarction (ischemic stroke). It has been found that reduction of ?2-antiplasmin leads to a significantly smaller focal cerebral infarct size. The invention therefore provides the use of compounds that reduce ?2-antiplasmin concentration or activity in vivo, for the preparation of a therapeutical composition for the treatment of focal cerebral ischemic infarction (ischemic stroke).

Abstract: An ion implantation method includes scanning reciprocatingly an ion beam in an X direction by an electric field or magnetic field and mechanically driving reciprocatingly a substrate in a Y direction orthogonal to the X direction to implant ions over the entire surface of the substrate. A dose distribution that is non-uniform within the plane of the substrate is formed within the plane of the substrate by changing at least one of a scanning speed of the ion beam and a driving speed of the substrate within an area where the ion beam is incident on the substrate.

Abstract: The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Abstract: A holder driving device has: a holder holding a substrate, a shaft supporting the holder, a driver for driving the shaft reciprocatingly and linearly in the direction along the shaft, a bearing unit having mechanical linear motion bearings for supporting the shaft thereon and having one or more stages of exhaust chambers surrounding the shaft; a vacuum pump for vacuum-pumping the exhaust chambers of the bearing unit; and a gas replacement mechanism for supplying dry gas, the humidity of which is lower than that of at least the surrounding atmosphere and the pressure of which is positive, from the outside of the bearing unit to at least the neighborhood of an atmosphere-side entrance portion of a gap between an end portion of the bearing unit one the side opposite to the vacuum vessel and the shaft passing the end portion, so as to replace the atmosphere near the entrance portion by the dry gas.

Abstract: The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Abstract: The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Abstract: A loyalty program using a smart card enables realtime customer information analysis at a shop. Customer services are improved by conveniently and realtime providing results of analyzing each customer's usage status and tendency. A smart card application program analyzes customer information. Since the smart card has just a limited capacity and calculation capability, the card is incapable of complicated calculation and storing a large amount of log data. To solve this problem, a recurrence formula is used for calculating a value representing the customer's buying habit. There is provided a plurality of parameters needed for the calculation in order to enable determination of loyal customers according to different evaluation criteria such as a score based on the most recent purchase amount or the continuity. In addition, a shop card is used for point management to more economically enable customer information analysis at shops.

Abstract: Current density distributions of the ion beam in the scanning direction (the direction of X) at two points Zf and Zb on Z-coordinate are respectively measured by Faraday arrays. Using the thus measured current density distributions, a current density distribution in the scanning direction of the ion beam at an arbitrary position on Z-coordinate located in a workpiece is found by the method of interpolation. Using the thus found current density distribution, a waveform of scanning voltage V(t) of the ion beam is reformed so that a scanning speed of the ion beam can be relatively decreased at a position where the current density must be raised in the current density distribution and a scanning speed of the ion beam can be relatively increased at a position where the current density must be lowered. Due to the foregoing, a current density distribution in the scanning direction of the ion beam at an arbitrary position on Z-coordinate located in the workpiece is adjusted to a desired distribution.

Abstract: A workflow management method in a workflow system including a workflow server and tables for holding processes includes storing in a table a plurality of definition information sets for individually defining workflows for a plurality of processes included in a job for processing a plurality of works to be circulated, wherein the plurality of definition information sets each have a process ID, a process name, and a user role ID, and at least one of the plurality of definition information set has predetermined data for connecting processing defined by another definition information set in the user role ID, and storing in a table a work management information set created for each of the plurality of works subjected to processing by the job, the work management information set having a process ID, a process name, a user role ID, and a flag representative of whether or not workflow processing corresponding to processing of each work has been terminated.

Abstract: A magnetic deflection system for scanning an ion beam over a selected surface comprising: a magnetic structure having poles with respective scanning coils and respective pole faces that define therebetween a gap through which the ion beam passes; a primary current source coupled to the scanning coils adapted to apply to the scanning coils an excitation current to generate a substantially unipolar oscillatory magnetic field in the gap that alternates in polarity as a function of time to cause scanning of the ion beam, the substantially unipolar magnetic field having a magnitude sufficiently greater than zero to prevent the transverse cross-section of the ion beam from substantially fluctuating in size while the ion beam is being scanned across the selected surface.

Abstract: In an ion implantation apparatus comprising scanning electrodes for electrically scanning an ion beam in an X direction, a scanning power supply for supplying a scanning power to the scanning electrodes, a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction, a beam current measurement device disposed at one end section of the scanning area of the ion beam for measuring a beam current of the ion beam, and a control unit for computing the scanning speed of the target based on the beam current measured by the beam current measurement device and for controlling the drive unit so that the target is driven at the computed speed, the control unit outputs a trigger signal whenever the computation process of the scanning speed of the target is completed, and the scanning power supply outputs the scanning power for one reciprocative scanning operation of the ion beam at every time the scanning power supply receives the trigger signal from the control unit.

Abstract: An ion implantation apparatus comprises: an implantation chamber into which an ion beam is entered, the ion beam being scanned in an X direction; a holder for holding a wafer in the implantation chamber; and a holder drive unit for mechanically scanning the holder in a Y direction substantially perpendicular to the X direction in the implantation chamber. The holder drive unit swingingly rotates the holder so that the wafer is mechanically scanned in the Y direction.