Patents by Inventor Nobuo Tanba
Nobuo Tanba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6864559Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: March 4, 2003Date of Patent: March 8, 2005Assignee: Renesas Technology Corp.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 6740958Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: April 4, 2002Date of Patent: May 25, 2004Assignee: Renesas Technology Corp.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Publication number: 20030178699Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: ApplicationFiled: March 4, 2003Publication date: September 25, 2003Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Publication number: 20020153591Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: ApplicationFiled: April 4, 2002Publication date: October 24, 2002Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 6208010Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: December 18, 1995Date of Patent: March 27, 2001Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 5497023Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: December 8, 1994Date of Patent: March 5, 1996Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikasu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 5386135Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: April 12, 1994Date of Patent: January 31, 1995Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 5324982Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: October 2, 1991Date of Patent: June 28, 1994Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 5148255Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.Type: GrantFiled: January 23, 1991Date of Patent: September 15, 1992Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
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Patent number: 5029323Abstract: A semiconductor device facilitates keeping all parasitic resistance values between contact portion of a common source (V.sub.cc) line and intrinsic collector operation regions of respective transistors small enough so as not to exceed predetermined values and so as to be nearly identical. The parasitic resistance values are made small and nearly identical by disposing collector electrode connecting layers between base impurity introducing layers of respective transistors provided with predetermined intervals in a semiconductor substrate. Because of this arrangement to minimize and equalize resistances, the voltage drops generated by the parasitic resistances applied to respective transistors are suppressed so as to be lower than or not substantially exceed the operation threshold voltages of the parasitic transistors.Type: GrantFiled: August 29, 1989Date of Patent: July 2, 1991Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Nobuo Tanba, Nobuyuki Gotoo, Kazunori Onozawa, Atsushi Hiraishi
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Patent number: 5026654Abstract: Disclosed is here a semicondutor integrated circuit device and a method of manufacturing the same in which bipolar transistors and MISFETs are formed on a semiconductor substrate. Emitter and base electrodes of the bipolar transistors and gate, source, and drain electrodes of the MISFETs are constituted with the same polycrystalline layer, thereby realizing a high integration and a high-speed operation of a Bi-CMOS device.Type: GrantFiled: February 24, 1988Date of Patent: June 25, 1991Assignee: Hitachi, Ltd.Inventors: Nobuo Tanba, Takahide Ikeda
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Patent number: 4868626Abstract: A semiconductor device facilitates keeping all parasitic resistance values between contact portion of a common source (V.sub.cc) line and intrinsic collector operation regions of respective transistors small enough so as not to exceed predetermined values and so as to be nearly identical. The parasitic resistance values are made small and nearly identical by disposing collector electrode connecting layers between base impurity introducing layers of respective transistors provided with predetermined intervals in a semiconductor substrate. Because of this arrangement to minimize and equalize resistances, the voltage drops generated by the parasitic resistances applied to respective transistors are suppressed so as to be lower than or not substantially exceed the operation threshold voltages of the parasitic transistors.Type: GrantFiled: April 30, 1987Date of Patent: September 19, 1989Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Nobuo Tanba, Nobuyuki Gotoo, Kazunori Onozawa, Atsushi Hiraishi
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Patent number: 4672416Abstract: A semiconductor device facilitates keeping all parasitic resistance values between contact portion of a common source (V.sub.cc) line and intrinsic collector operation regions of respective transistors small enough so as not to exceed predetermined values and so as to be nearly identical. The parasitic resistance values are made small and nearly identical by disposing collector electrode connecting layers between base impurity introducing layers of respective transistors provided with predetermined intervals in a semiconductor substrate. Because of this arrangement to minimize and equalize resistances, the voltage drops generated by the parasitic resistances applied to respective transistors are suppressed so as to be lower than or not substantially exceed the operation threshold voltages of the parasitic transistors.Type: GrantFiled: March 25, 1986Date of Patent: June 9, 1987Assignee: Hitachi, Ltd.Inventors: Shinji Nakazato, Hideaki Uchida, Nobuo Tanba, Nobuyuki Gotoo, Kazunori Onozawa, Atsushi Hiraishi