Patents by Inventor Nobuo Tokai

Nobuo Tokai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor-manufacturing apparatus
    Patent number: 7393417
    Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.
    Type: Grant
    Filed: October 20, 2000
    Date of Patent: July 1, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Yuji Maeda, Koji Nakanishi, Nobuo Tokai, Ichiro Kawai
  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Patent number: 6884464
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: April 26, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Publication number: 20040086640
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Application
    Filed: November 4, 2002
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Steven Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Method and system for forming film, semiconductor device and fabrication method thereof
    Patent number: 6566199
    Abstract: An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system 1 according to the present invention is a system for forming a thin film of SiO2 on an Si wafer W and is provided with a reactant gas exhaust system 15 for reducing the pressure around the Si wafer W, a reactant gas supply system 14 for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber 2 having a lamp group 9G for heating the Si wafer W, and a wafer support member 3.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: May 20, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Nobuo Tokai, Yuji Maeda, Masayuki Hashimoto
  • Method and system for forming film, semiconductor device and fabrication method thereof
    Publication number: 20020014700
    Abstract: An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system 1 according to the present invention is a system for forming a thin film of SiO2 on an Si wafer W and is provided with a reactant gas exhaust system 15 for reducing the pressure around the Si wafer W, a reactant gas supply system 14 for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber 2 having a lamp group 9G for heating the Si wafer W, and a wafer support member 3.
    Type: Application
    Filed: April 17, 2001
    Publication date: February 7, 2002
    Inventors: Nobuo Tokai, Yuji Maeda, Masayuki Hashimoto