Abstract: A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.

Abstract: A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring that is provided on a first surface of the semiconductor substrate, an insulating layer provided on an inner surface of the through hole and a second surface of the semiconductor substrate, and a second wiring that is provided on a surface of the insulating layer and electrically connected to the first wiring in an opening. The surface of the insulating layer includes a first region, a second region, a third region, a fourth region that is curved to continuously connect the first and the second regions, and a fifth region that is curved to continuously connect the second and the third regions. An average inclination angle of the second region is smaller than that of the first region and is smaller than that of the inner surface.

Abstract: A light module includes an optical element and a base on which the optical element is mounted. The optical element has an optical portion which has an optical surface; an elastic portion which is provided around the optical portion such that an annular region is formed; and a pair of support portions which is provided such that the optical portion is sandwiched in a first direction along the optical surface and in which an elastic force is applied and a distance therebetween is able to be changed in accordance with elastic deformation of the elastic portion. The base has a main surface, and a mounting region in which an opening communicating with the main surface is provided. The support portions are inserted into the opening in a state where an elastic force of the elastic portion is applied.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole.

Abstract: A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.

Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.

Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate, and having an impurity concentration higher than an impurity concentration of the first semiconductor region, a third semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on the one surface side so as to surround the second semiconductor region separately from the second semiconductor region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the first semiconductor region and the second semiconductor region, and electrically connected to the third semiconductor region.

Abstract: A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.

Abstract: A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

Abstract: A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.

Abstract: A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring that is provided on a first surface of the semiconductor substrate, an insulating layer provided on an inner surface of the through hole and a second surface of the semiconductor substrate, and a second wiring that is provided on a surface of the insulating layer and electrically connected to the first wiring in an opening. The surface of the insulating layer includes a first region, a second region, a third region, a fourth region that is curved to continuously connect the first and the second regions, and a fifth region that is curved to continuously connect the second and the third regions. An average inclination angle of the second region is smaller than that of the first region and is smaller than that of the inner surface.

Abstract: A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring, an insulating layer, and a second wiring that is electrically connected to the first wiring in an opening of the insulating layer. The insulating layer has a first curved portion that covers an inner surface of a through hole between a first opening and a second opening and a second curved portion that covers an edge of the second opening. A surface in the first curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole. The surface in the second curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole.

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract: A light detection device 1 has a semiconductor light detection element having a semiconductor substrate, and a mounting substrate arranged as opposed to the semiconductor light detection element. The semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in the semiconductor substrate, and electrodes electrically connected to the respective avalanche photodiodes and arranged on a second principal surface side of the semiconductor substrate. The mounting substrate includes a plurality of electrodes arranged corresponding to the respective electrodes on a third principal surface side, and quenching resistors electrically connected to the respective electrodes and arranged on the third principal surface side. The electrodes and the electrodes are connected through bump electrodes.

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through hump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.