Patents by Inventor Noburu Arima

Noburu Arima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4926793
    Abstract: The present invention relates to a method of forming oxide or other insulating films on semiconductor wafers and other substrates and single-crystal films (epitaxial films) having the same crystal orientation as that of the substrates according to chemical reactions between reaction gases or chemical reactions between the reaction gas and the substrates, and an apparatus therefor such as an epitaxial growth apparatus, an oxidation apparatus, or the like, and more particularly, a method of forming a uniform thin film on each of a large number of substrates and an apparatus therefor.According to an aspect, vertical sets of substrates are stacked in a peripheral space radially spaced apart from a central portion of the active space by a predetermined distance. A reaction gas has passed through a reaction region on a surface of one substrate can be exhausted outside the reactor without affecting a reaction region on a surface of another substrate.
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: May 22, 1990
    Assignees: Shin-Etsu Handotai Co., Ltd., Sin-Etsu Quartz Products Co., Ltd.
    Inventors: Noburu Arima, Nobuyosi Ogino, Hirosi Kimura