Abstract: A semiconductor device of an embodiment includes an overvoltage protection diode in which an N-type semiconductor layer and a P-type semiconductor layer, formed on an insulating film in a voltage supporting region, are alternately disposed adjacently to each other. The overvoltage protection diode is disposed at a corner portion on the upper face of the insulating film, and extends from the corner portion to the center portion of the semiconductor substrate.

Abstract: A semiconductor device of an embodiment includes a conductive semiconductor substrate, an insulating film formed on the semiconductor substrate, an overvoltage protection diode configured to be formed on the insulating film and to include an n-type semiconductor layer and a p-type semiconductor layer alternately arranged adjacent to each other, and an insulating film that covers the overvoltage protection diode. The concentration of the p-type impurities in the p-type semiconductor layer is lower than the concentration of the n-type impurities in the n-type semiconductor layer. The concentration peak of the p-type impurities is disposed in a non-boundary region between a boundary region and a boundary region.

Abstract: A semiconductor switch SW that includes a collector electrode C, an emitter electrode E and a gate electrode G, a Zener diode 5A configured to include one end electrically connected to the collector electrode C, the other end electrically connected to the gate electrode G, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, a Zener diode 5B configured to include one end electrically connected to the gate electrode G, the other end electrically connected to the emitter electrode E, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, are provided. The Zener diode 5A and the Zener diode 5B are configured so as not to allow the voltage of the gate electrode G to be increased to an on-threshold voltage of the semiconductor switch SW in the reverse bias application state.

Abstract: A semiconductor device according to an embodiment includes: an insulating film formed on a voltage supporting region B; an overvoltage protection diode that includes an n-type semiconductor layer and a p-type semiconductor layer; conductor portions that are formed on the insulating film and are electrically connected to the overvoltage protection diode; and a high-potential portion arranged above the overvoltage protection diode via an insulating film. The p-type impurity concentration of the p-type semiconductor layer is lower than the n-type impurity concentration of the n-type semiconductor layer. In the reverse bias application state, the high-potential portion has a higher potential than a potential of the potential of the p-type semiconductor layer disposed directly under the high-potential portion.

Abstract: A semiconductor switch SW that includes a collector electrode C, an emitter electrode E and a gate electrode G, a Zener diode 5A configured to include one end electrically connected to the collector electrode C, the other end electrically connected to the gate electrode G, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, a Zener diode 5B configured to include one end electrically connected to the gate electrode G, the other end electrically connected to the emitter electrode E, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, are provided. The Zener diode 5A and the Zener diode 5B are configured so as not to allow the voltage of the gate electrode G to be increased to an on-threshold voltage of the semiconductor switch SW in the reverse bias application state.

Abstract: In a semiconductor device according to an embodiment, ends of conductor portions are electrically connected to an overvoltage protection diode so that depletion occurs in a diffusion layer in a portion near an insulating film in a reverse bias application state, and/or ends of conductor portions are electrically connected to the overvoltage protection diode so that depletion occurs in a peripheral semiconductor region in a portion near the insulating film in the reverse bias application state.

Abstract: A semiconductor device of an embodiment includes an overvoltage protection diode in which an N-type semiconductor layer and a P-type semiconductor layer, formed on an insulating film in a voltage supporting region, are alternately disposed adjacently to each other. The overvoltage protection diode is disposed at a corner portion on the upper face of the insulating film, and extends from the corner portion to the center portion of the semiconductor substrate.

Abstract: A semiconductor device according to an embodiment includes: an insulating film formed on a voltage supporting region B; an overvoltage protection diode that includes an n-type semiconductor layer and a p-type semiconductor layer; conductor portions that are formed on the insulating film and are electrically connected to the overvoltage protection diode; and a high-potential portion arranged above the overvoltage protection diode via an insulating film. The p-type impurity concentration of the p-type semiconductor layer is lower than the n-type impurity concentration of the n-type semiconductor layer. In the reverse bias application state, the high-potential portion has a higher potential than a potential of the potential of the p-type semiconductor layer disposed directly under the high-potential portion.

Abstract: A semiconductor device of an embodiment includes a conductive semiconductor substrate, an insulating film formed on the semiconductor substrate, an overvoltage protection diode configured to be formed on the insulating film and to include an n-type semiconductor layer and a p-type semiconductor layer alternately arranged adjacent to each other, and an insulating film that covers the overvoltage protection diode. The concentration of the p-type impurities in the p-type semiconductor layer is lower than the concentration of the n-type impurities in the n-type semiconductor layer. The concentration peak of the p-type impurities is disposed in a non-boundary region between a boundary region and a boundary region.

Abstract: In a semiconductor device according to an embodiment, ends of conductor portions are electrically connected to an overvoltage protection diode so that depletion occurs in a diffusion layer in a portion near an insulating film in a reverse bias application state, and/or ends of conductor portions are electrically connected to the overvoltage protection diode so that depletion occurs in a peripheral semiconductor region in a portion near the insulating film in the reverse bias application state.