Abstract: A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: A laminated glass according to the present invention includes a first glass plate, a second glass plate, and an interlayer film. The interlayer film includes a laminated region including a first layer that is in contact with the first glass plate, a second layer that is in contact with the second glass plate, and a third layer disposed between the first layer and the second layer. When the relative dielectric constant of the first glass plate is denoted by ?g1, the relative dielectric constant of the second glass plate is denoted by ?g2, the relative dielectric constant of the first layer is denoted by ?m1, the relative dielectric constant of the second layer is denoted by ?m2, and the relative dielectric constant of the third layer is denoted by ?m3, relationships ?m1<?g1, ?m1<?g2, ?m2<?g1, ?m2<?g2, ?m3>?m1, ?m3>?m2 are established.

Abstract: A laminated glass according to an embodiment of the present invention includes a first glass plate, a second glass plate, and an interlayer film held between the first glass plate and the second glass plate. When a relative dielectric constant of the first glass plate is represented by ?g1; a relative dielectric constant of the second glass plate is represented by ?g2; a relative dielectric constant of a first interlayer film provided in a first region of the interlayer film is represented by ?m1; a reflection coefficient at an interface between the first glass plate and the first interlayer film is represented by ?1; and a reflection coefficient at an interface between the second glass plate and the first interlayer film is represented by ?2, the reflection coefficients ?1 and ?2 satisfy relations 0.0??1?0.2 and 0.0??2?0.2.

Abstract: A laminated glass according to the present invention includes a first glass plate, a second glass plate, and an interlayer film. The interlayer film includes a laminated region including a first layer that is in contact with the first glass plate, a second layer that is in contact with the second glass plate, and a third layer disposed between the first layer and the second layer. When the relative dielectric constant of the first glass plate is denoted by ?g1, the relative dielectric constant of the second glass plate is denoted by ?g2, the relative dielectric constant of the first layer is denoted by ?m1, the relative dielectric constant of the second layer is denoted by ?m2, and the relative dielectric constant of the third layer is denoted by ?m3, relationships ?m1<?g1, ?m1<?g2, ?m2<?g1, ?m2<?g2, ?m3>?m1, ?m3>?m2 are established.

Abstract: The purpose of the present invention is to provide a fluororesin film or fluororesin laminate excellent in heat resistance and excellent in interlayer adhesion to an object to be laminated, such as a prepreg, a method for producing a hot pressed laminate using said film or laminate, and a method for producing a printed circuit board. The fluororesin film contains a fluororesin having a melting point of from 260 to 380° C., and has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 ?m2 of at least one surface thereof in the thickness direction is measured by an atomic force microscope. The laminate 1 has a layer A10 containing said fluororesin and a layer B12 made of another substrate, wherein the layer A10 has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 ?m2 of a second surface 10b thereof is measured by an atomic force microscope.

Abstract: A filter includes a waveguide formed in a dielectric surrounded by a conductor wall. The conductor wall includes at least one control wall protruding toward an inner side of the waveguide. The at least one control wall includes an end portion in a protruding direction of the at least one control wall and a central portion in the protruding direction. The end portion includes a wall portion of which wall thickness is different from the central portion.

Abstract: A resin powder having a high bulk density and an average particle size of at most 50 ?m from resin particles containing a fluorocopolymer as the main component and having a melting point of 260 to 320° C., where the fluorocopolymer contains a unit containing a carbonyl group-containing group, a unit based on tetrafluoroethylene, and a unit based on a perfluoro(alkyl vinyl ether) or a unit based on hexafluoropropylene. A method of producing the resin powder by subjecting resin particles (A) having an average particle size of at least 100 ?m to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component, which has a unit (1) based on a monomer containing at least one functional group selected from a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene.

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 um or less in terms of arithmetic average roughness Ra. and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: A filter includes a waveguide formed in a dielectric surrounded by a conductor wall. The conductor wall includes at least one control wall protruding toward an inner side of the waveguide. The at least one control wall includes an end portion in a protruding direction of the at least one control wall and a central portion in the protruding direction. The end portion includes a wall portion of which wall thickness is different from the central portion.

Abstract: A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: To provide a method capable of producing, by means of mechanical pulverization, a resin powder having a high bulk density and an average particle size of at most 50 ?m from resin particles containing a fluorocopolymer as the main component and having a melting point of from 260 to 320° C., such as PFA. The method is to obtain a resin powder having an average particle size of from 0.02 to 50 ?m by subjecting resin particles (A) having an average particle size of at least 100 ?m to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component; and said fluorocopolymer (X1) has a unit (1) based on a monomer containing at least one type of functional group selected from the group consisting of a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene, and has a melting point of from 260 to 320° C.

Abstract: The purpose of the present invention is to provide a fluororesin film or fluororesin laminate excellent in heat resistance and excellent in interlayer adhesion to an object to be laminated, such as a prepreg, a method for producing a hot pressed laminate using said film or laminate, and a method for producing a printed circuit board. The fluororesin film contains a fluororesin having a melting point of from 260 to 380° C., and has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 ?m2 of at least one surface thereof in the thickness direction is measured by an atomic force microscope. The laminate 1 has a layer A10 containing said fluororesin and a layer B12 made of another substrate, wherein the layer A10 has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 ?m2 of a second surface 10b thereof is measured by an atomic force microscope.

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: To produce a wiring substrate having excellent electrical characteristics with conduction failure in a hole formed in a layer made of a fluororesin material sufficiently suppressed without conducting an etching treatment using metal sodium. A process for producing a wiring substrate, which comprises forming a hole in a laminate comprising a first conductor layer, a layer (A) which is made of a fluororesin material containing a melt-moldable fluororesin having specific functional groups and a reinforcing fiber substrate and which has a dielectric constant from 2.0 to 3.5, a second conductor layer, an adhesive layer and a layer (B) made of a cured product of a thermosetting resin laminated in this order, applying, to an inner wall surface of the hole, either one or both of a treatment with a permanganic acid solution and a plasma treatment without conducting an etching treatment using metal sodium, and then forming a plating layer.

Abstract: To produce a wiring substrate having excellent electrical characteristics with conduction failure in a hole formed in a layer made of a fluororesin material sufficiently suppressed without conducting an etching treatment using metal sodium. A process for producing a wiring substrate 1, which comprises forming a hole 20 in a laminate comprising a first conductor layer 12, a layer (A) 10 which is made of a fluororesin material containing a melt-moldable fluororesin (a) having specific functional groups and a reinforcing fiber substrate and which has a dielectric constant of from 2.0 to 3.

Abstract: To provide a process for producing a wiring substrate with conduction failure in a hole formed in an electrical insulator layer suppressed even without conducting an etching treatment using metal sodium, and with unexpected deformation such as warpage suppressed even when the electrical insulator layer contains no woven fabric or non-woven fabric comprising reinforcing fibers. A process for producing a wiring substrate 1, which comprises forming a hole 20 in a laminate comprising a first conductor layer 12, an electrical insulator layer 10 which contains a specific fluororesin layer (A) 16 and a heat resistant resin layer (B) 18, contains no reinforcing fiber to substrate, and has a dielectric constant of from 2.0 to 3.5 and a linear expansion coefficient of from 0 to 35 ppm/° C.

Abstract: To provide a method capable of producing, by means of mechanical pulverization, a resin powder having a high bulk density and an average particle size of at most 50 ?m from resin particles containing a fluorocopolymer as the main component and having a melting point of from 260 to 320° C., such as PFA. The method is to obtain a resin powder having an average particle size of from 0.02 to 50 ?m by subjecting resin particles (A) having an average particle size of at least 100 ?m to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component; and said fluorocopolymer (X1) has a unit (1) based on a monomer containing at least one type of functional group selected from the group consisting of a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene, and has a melting point of from 260 to 320° C.