Patents by Inventor Nobutaka KIDERA

Nobutaka KIDERA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11041053
    Abstract: A resin powder having a high bulk density and an average particle size of at most 50 ?m from resin particles containing a fluorocopolymer as the main component and having a melting point of 260 to 320° C., where the fluorocopolymer contains a unit containing a carbonyl group-containing group, a unit based on tetrafluoroethylene, and a unit based on a perfluoro(alkyl vinyl ether) or a unit based on hexafluoropropylene. A method of producing the resin powder by subjecting resin particles (A) having an average particle size of at least 100 ?m to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component, which has a unit (1) based on a monomer containing at least one functional group selected from a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: June 22, 2021
    Assignee: AGC Inc.
    Inventors: Tomoya Hosoda, Eiichi Nishi, Toru Sasaki, Nobutaka Kidera
  • Publication number: 20210163341
    Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 um or less in terms of arithmetic average roughness Ra. and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
    Type: Application
    Filed: February 12, 2021
    Publication date: June 3, 2021
    Applicant: AGC Inc.
    Inventors: Kazutaka ONO, Shuhei NOMURA, Nobutaka KIDERA, Nobuhiko TAKESHITA
  • Patent number: 10974987
    Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: April 13, 2021
    Assignee: AGC Inc.
    Inventors: Kazutaka Ono, Shuhei Nomura, Nobutaka Kidera, Nobuhiko Takeshita
  • Publication number: 20200328489
    Abstract: A filter includes a waveguide formed in a dielectric surrounded by a conductor wall. The conductor wall includes at least one control wall protruding toward an inner side of the waveguide. The at least one control wall includes an end portion in a protruding direction of the at least one control wall and a central portion in the protruding direction. The end portion includes a wall portion of which wall thickness is different from the central portion.
    Type: Application
    Filed: June 25, 2020
    Publication date: October 15, 2020
    Applicant: AGC Inc.
    Inventor: Nobutaka KIDERA
  • Publication number: 20200255324
    Abstract: A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.
    Type: Application
    Filed: April 28, 2020
    Publication date: August 13, 2020
    Applicant: AGC Inc.
    Inventors: Nobutaka KIDERA, Kazuya SASAKI, Yasutomi IWAHASHI
  • Publication number: 20200123043
    Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: AGC Inc.
    Inventors: Kazutaka ONO, Shuhei NOMURA, Nobutaka KIDERA, Nobuhiko TAKESHITA
  • Publication number: 20200115509
    Abstract: To provide a method capable of producing, by means of mechanical pulverization, a resin powder having a high bulk density and an average particle size of at most 50 ?m from resin particles containing a fluorocopolymer as the main component and having a melting point of from 260 to 320° C., such as PFA. The method is to obtain a resin powder having an average particle size of from 0.02 to 50 ?m by subjecting resin particles (A) having an average particle size of at least 100 ?m to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component; and said fluorocopolymer (X1) has a unit (1) based on a monomer containing at least one type of functional group selected from the group consisting of a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene, and has a melting point of from 260 to 320° C.
    Type: Application
    Filed: December 10, 2019
    Publication date: April 16, 2020
    Applicant: AGC Inc.
    Inventors: Tomoya HOSODA, Eiichi NISHI, Toru SASAKI, Nobutaka KIDERA
  • Publication number: 20200048420
    Abstract: The purpose of the present invention is to provide a fluororesin film or fluororesin laminate excellent in heat resistance and excellent in interlayer adhesion to an object to be laminated, such as a prepreg, a method for producing a hot pressed laminate using said film or laminate, and a method for producing a printed circuit board. The fluororesin film contains a fluororesin having a melting point of from 260 to 380° C., and has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 ?m2 of at least one surface thereof in the thickness direction is measured by an atomic force microscope. The laminate 1 has a layer A10 containing said fluororesin and a layer B12 made of another substrate, wherein the layer A10 has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 ?m2 of a second surface 10b thereof is measured by an atomic force microscope.
    Type: Application
    Filed: October 23, 2019
    Publication date: February 13, 2020
    Applicant: AGC Inc.
    Inventors: Tomoya HOSODA, Tatsuya TERADA, Atsumi YAMABE, Nobutaka KIDERA, Wataru KASAI
  • Publication number: 20190210911
    Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
    Type: Application
    Filed: March 12, 2019
    Publication date: July 11, 2019
    Applicant: AGC Inc.
    Inventors: Kazutaka ONO, Shuhei Nomura, Nobutaka Kidera, Nobuhiko Takeshita
  • Patent number: 10271428
    Abstract: To produce a wiring substrate having excellent electrical characteristics with conduction failure in a hole formed in a layer made of a fluororesin material sufficiently suppressed without conducting an etching treatment using metal sodium. A process for producing a wiring substrate, which comprises forming a hole in a laminate comprising a first conductor layer, a layer (A) which is made of a fluororesin material containing a melt-moldable fluororesin having specific functional groups and a reinforcing fiber substrate and which has a dielectric constant from 2.0 to 3.5, a second conductor layer, an adhesive layer and a layer (B) made of a cured product of a thermosetting resin laminated in this order, applying, to an inner wall surface of the hole, either one or both of a treatment with a permanganic acid solution and a plasma treatment without conducting an etching treatment using metal sodium, and then forming a plating layer.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: April 23, 2019
    Assignee: AGC Inc.
    Inventors: Tomoya Hosoda, Toru Sasaki, Nobutaka Kidera, Tatsuya Terada
  • Publication number: 20180213641
    Abstract: To produce a wiring substrate having excellent electrical characteristics with conduction failure in a hole formed in a layer made of a fluororesin material sufficiently suppressed without conducting an etching treatment using metal sodium. A process for producing a wiring substrate 1, which comprises forming a hole 20 in a laminate comprising a first conductor layer 12, a layer (A) 10 which is made of a fluororesin material containing a melt-moldable fluororesin (a) having specific functional groups and a reinforcing fiber substrate and which has a dielectric constant of from 2.0 to 3.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 26, 2018
    Applicant: Asahi Glass Company, Limited
    Inventors: Tomoya HOSODA, Toru Sasaki, Nobutaka Kidera, Tatsuya Terada
  • Publication number: 20180213637
    Abstract: To provide a process for producing a wiring substrate with conduction failure in a hole formed in an electrical insulator layer suppressed even without conducting an etching treatment using metal sodium, and with unexpected deformation such as warpage suppressed even when the electrical insulator layer contains no woven fabric or non-woven fabric comprising reinforcing fibers. A process for producing a wiring substrate 1, which comprises forming a hole 20 in a laminate comprising a first conductor layer 12, an electrical insulator layer 10 which contains a specific fluororesin layer (A) 16 and a heat resistant resin layer (B) 18, contains no reinforcing fiber to substrate, and has a dielectric constant of from 2.0 to 3.5 and a linear expansion coefficient of from 0 to 35 ppm/° C.
    Type: Application
    Filed: March 20, 2018
    Publication date: July 26, 2018
    Applicant: Asahi Glass Company, Limited
    Inventors: Tomoya HOSODA, Toru SASAKI, Nobutaka KIDERA, Tatsuya TERADA
  • Publication number: 20170130009
    Abstract: To provide a method capable of producing, by means of mechanical pulverization, a resin powder having a high bulk density and an average particle size of at most 50 ?m from resin particles containing a fluorocopolymer as the main component and having a melting point of from 260 to 320° C., such as PFA. The method is to obtain a resin powder having an average particle size of from 0.02 to 50 ?m by subjecting resin particles (A) having an average particle size of at least 100 ?m to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component; and said fluorocopolymer (X1) has a unit (1) based on a monomer containing at least one type of functional group selected from the group consisting of a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene, and has a melting point of from 260 to 320° C.
    Type: Application
    Filed: January 24, 2017
    Publication date: May 11, 2017
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Tomoya HOSODA, Eiichi NISHI, Toru SASAKI, Nobutaka KIDERA