Patents by Inventor Nobutaka Mizutani
Nobutaka Mizutani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11519074Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: GrantFiled: June 29, 2020Date of Patent: December 6, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Patent number: 11004684Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: GrantFiled: January 22, 2019Date of Patent: May 11, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Publication number: 20210115565Abstract: A plating method includes preparing a substrate having a surface including an adhesive material portion made of a material to which a catalyst easily adheres and a non-adhesive material portion to which the catalyst is difficult to attach; imparting the catalyst to the substrate by supplying a catalyst solution onto the substrate; removing, by supplying a catalyst removing liquid containing a reducing agent onto the substrate, the catalyst from the non-adhesive material portion while allowing the catalyst to be left on a surface of the adhesive material portion; and forming a plating layer selectively on the adhesive material portion by supplying a plating liquid onto the substrate.Type: ApplicationFiled: March 22, 2018Publication date: April 22, 2021Inventors: Yuichiro Inatomi, Nobutaka Mizutani
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Publication number: 20210108316Abstract: A substrate processing method includes preparing a substrate having, on a surface thereof, a first portion made of a silicon compound including nitrogen and a second portion made of a material different from the first portion; forming a SAM (Self-Assembled Monolayer) on the surface of the substrate; imparting a catalyst to the substrate by supplying a catalyst containing liquid onto the substrate on which the SAM is formed; and performing a plating on the substrate to which the catalyst is imparted. The forming of the SAM is carried out by supplying a SAM forming chemical, which does not have a functional group including nitrogen, onto the substrate.Type: ApplicationFiled: March 22, 2018Publication date: April 15, 2021Inventors: Nobutaka Mizutani, Kazutoshi Iwai
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Publication number: 20200325581Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: ApplicationFiled: June 29, 2020Publication date: October 15, 2020Inventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Patent number: 10755973Abstract: A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.Type: GrantFiled: August 29, 2017Date of Patent: August 25, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Keiichi Fujita, Kazutoshi Iwai, Nobutaka Mizutani
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Patent number: 10731256Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: GrantFiled: April 5, 2017Date of Patent: August 4, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Publication number: 20190229016Abstract: A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.Type: ApplicationFiled: August 29, 2017Publication date: July 25, 2019Inventors: Keiichi Fujita, Kazutoshi Iwai, Nobutaka Mizutani
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Publication number: 20190157083Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: ApplicationFiled: January 22, 2019Publication date: May 23, 2019Inventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Patent number: 10224202Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: GrantFiled: March 30, 2017Date of Patent: March 5, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Patent number: 10224208Abstract: An electroless plating process is performed on an Al layer, which is made of aluminum or an aluminum alloy, with an electroless plating liquid which is alkaline and contains a complexing agent. A plating method includes preparing a substrate 10 having a surface (for example, bottom surface of TSV 12) at which an Al layer 22 made of aluminum or an aluminum alloy is exposed; forming a zincate film 30 on a surface of the Al layer by performing a zincate treatment on the substrate; and forming a first electroless plating layer (for example, Co barrier layer 14a) on the surface of the Al layer with an electroless plating liquid (for example, Co-based plating liquid) which is alkaline and contains a complexing agent.Type: GrantFiled: May 10, 2016Date of Patent: March 5, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Nobutaka Mizutani, Mitsuaki Iwashita, Takashi Tanaka
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Patent number: 10179950Abstract: Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.Type: GrantFiled: June 16, 2016Date of Patent: January 15, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Inatomi, Takashi Tanaka, Nobutaka Mizutani
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Patent number: 10138556Abstract: A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid.Type: GrantFiled: May 27, 2013Date of Patent: November 27, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Nobutaka Mizutani, Takashi Tanaka, Mitsuaki Iwashita
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Patent number: 10030308Abstract: A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.Type: GrantFiled: February 22, 2013Date of Patent: July 24, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Tanaka, Yuichiro Inatomi, Nobutaka Mizutani, Yusuke Saito, Mitsuaki Iwashita
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Patent number: 9966306Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.Type: GrantFiled: February 19, 2016Date of Patent: May 8, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Inatomi, Takashi Tanaka, Nobutaka Mizutani, Yusuke Saito, Kazutoshi Iwai, Mitsuaki Iwashita
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Patent number: 9888585Abstract: Adhesion of an underlying diffusion barrier metal film and an electroless copper plating film with respect to an insulating film can be improved. A method for manufacturing a wiring structure includes a process of forming the underlying diffusion barrier metal film 5, including a base metal with respect to copper, on the insulating film 1; and a process of forming the electroless copper plating film 6 on the underlying diffusion barrier metal film 5 by performing an electroless copper displacement plating process with a copper displacement plating solution. The copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.Type: GrantFiled: September 25, 2015Date of Patent: February 6, 2018Assignees: TOKYO ELECTRON LIMITED, A SCHOOL CORPORATION KANSAI UNIVERSITYInventors: Shoso Shinguhara, Kohei Ota, Mitsuaki Iwashita, Nobutaka Mizutani
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Patent number: 9837308Abstract: A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.Type: GrantFiled: February 22, 2013Date of Patent: December 5, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Nobutaka Mizutani, Takashi Tanaka, Yuichiro Inatomi, Yusuke Saito, Mitsuaki Iwashita
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Publication number: 20170292192Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: ApplicationFiled: April 5, 2017Publication date: October 12, 2017Inventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Publication number: 20170287713Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: ApplicationFiled: March 30, 2017Publication date: October 5, 2017Inventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Patent number: 9725810Abstract: A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S305)). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S306)). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S307)). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.Type: GrantFiled: June 20, 2012Date of Patent: August 8, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Nobutaka Mizutani, Takashi Tanaka, Mitsuaki Iwashita