Patents by Inventor Nobutaka Sasaki
Nobutaka Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11950480Abstract: There are provided a color correction filter for a white organic electroluminescent light source including a resin and 0.1 part by mass or more of a coloring agent having an absorption maximum wavelength in a range of 560 to 620 nm or 460 to 520 nm with respect to 100 parts by mass of the resin, and having a moisture content of 0.5% by mass or less, and an organic EL display device having this filter.Type: GrantFiled: September 18, 2020Date of Patent: April 2, 2024Assignee: FUJIFILM CorporationInventors: Yu Naito, Nobutaka Fukagawa, Daisuke Sasaki, Hiroki Kuwahara
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Patent number: 11926740Abstract: Provided are a resin composition including a compound represented by Formula (1) and a resin, a film and a filter including the resin composition, a liquid crystal display device and a solid-state imaging element including the filter, and a compound suitable as a light absorbing component of the resin composition and the filter. In Formula (1), Dye represents a colorant structural part obtained by removing n1 hydrogen atoms from a squarylium compound having a specific structure. Q1 is a structural part in which energy levels of a highest occupied molecular orbital and a lowest unoccupied molecular orbital satisfy a specific condition. L1 represents a divalent linking group and n1 represents an integer of 1 to 4.Type: GrantFiled: August 13, 2020Date of Patent: March 12, 2024Assignee: FUJIFILM CorporationInventors: Daisuke Sasaki, Akihiro Hara, Kunihiko Kodama, Nobutaka Fukagawa, Yu Naito, Hiroki Kuwahara
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Patent number: 11912617Abstract: A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.Type: GrantFiled: April 28, 2020Date of Patent: February 27, 2024Assignee: AGC Inc.Inventors: Nobutaka Kidera, Kazuya Sasaki, Yasutomi Iwahashi
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Publication number: 20230326725Abstract: In a plasma processing apparatus, a table has a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes. The peripheral segment has an upper surface lower than that of the wafer support. An outer focus ring is disposed over the peripheral segment and has a recess or a cutout at an inner portion of the outer focus ring, and the recess or cutout has through-holes. An inner focus ring is disposed in the recess or cutout of the outer focus ring. Lift pins respectively extend through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring. Shift mechanisms control shift of the respective lift pins.Type: ApplicationFiled: June 14, 2023Publication date: October 12, 2023Applicant: TOKYO ELECTRON LIMITEDInventors: Shuichi TAKAHASHI, Takaharu MIYADATE, Takaaki KIKUCHI, Atsushi OGATA, Nobutaka SASAKI, Takashi TAIRA
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Publication number: 20230215753Abstract: A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.Type: ApplicationFiled: March 13, 2023Publication date: July 6, 2023Inventors: Norihiko AMIKURA, Masatomo KITA, Toshiyuki MAKABE, Shin MATSUURA, Nobutaka SASAKI, Gyeong min PARK
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Publication number: 20230178417Abstract: There is a substrate support comprising: a substrate supporting portion; a first ring disposed to surround the substrate supporting portion; a second ring surrounding the first ring without overlapping the first ring in plan view; a third ring disposed below the first ring and the second ring such that an inner portion of the third ring overlaps the first ring in plan view and an outer portion of the third ring overlaps the second ring in plan view, and having a hole at the inner portion of the third ring; a lifter having a first engaging portion protruding upward from the hole of the third ring and engaged with the first ring and a second engaging portion disposed below the first engaging portion and engaged with the third ring; and an actuator configured to raise and lower the lifter.Type: ApplicationFiled: December 6, 2022Publication date: June 8, 2023Applicant: Tokyo Electron LimitedInventors: Shin MATSUURA, Nobutaka SASAKI, Gyeong min PARK
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Publication number: 20220406575Abstract: A plasma processing apparatus, comprising a plasma processing chamber; a plasma generator to generate a plasma from a processing gas in the plasma processing chamber; and a substrate support disposed in the plasma processing chamber, is provided. The substrate support includes a base; an electrostatic chuck disposed above the base; a first annular member to surround a substrate on the substrate support; a second annular member disposed below the first annular member and having a plurality of through holes; a plurality of lift pins disposed to correspond to the respective through holes, each lift pin having an upper portion to support the first annular member through the corresponding through hole and a lower portion; at least one spacer fixed to at least one of the lift pins, disposed on the lower portion so as to surround the upper portion and support the second annular member; and at least one actuator to vertically move the lift pins.Type: ApplicationFiled: June 9, 2022Publication date: December 22, 2022Applicant: Tokyo Electron LimitedInventors: Gyeong min PARK, Nobutaka SASAKI
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Publication number: 20220122816Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.Type: ApplicationFiled: October 19, 2021Publication date: April 21, 2022Applicant: Tokyo Electron LimitedInventors: Nobutaka SASAKI, Shin MATSUURA, Gyeong min PARK, Toshiki AKAMA
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Publication number: 20220059323Abstract: A substrate processing apparatus includes: a processing chamber configured to execute a processing on a substrate by an introduced gas; an exhaust chamber configured to exhaust a gas existing in the processing chamber; a partition plate having a plurality of gas passing holes for bringing the processing chamber and the exhaust chamber into communication with each other therethrough; a measuring instrument configured to measure a state in the processing chamber; a first pipe configured to connect the processing chamber and the measuring instrument; a second pipe configured to bring the exhaust chamber and the measuring instrument into communication with each other therethrough via a first valve; and a controller, wherein the controller is configured to control the substrate processing apparatus so as to control the first valveType: ApplicationFiled: August 6, 2021Publication date: February 24, 2022Inventor: Nobutaka SASAKI
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Publication number: 20220037125Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.Type: ApplicationFiled: July 27, 2021Publication date: February 3, 2022Inventors: Nobutaka SASAKI, Shin MATSUURA
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Publication number: 20210027994Abstract: A shutter mechanism for opening and closing an opening of a cylindrical chamber of a substrate processing apparatus is provided. The shutter mechanism includes a valve body having a circumferential length of at least half of an inner circumference of the chamber, and two or more elevating mechanisms connected to a lower portion of the valve body and configured to vertically move the valve body.Type: ApplicationFiled: July 20, 2020Publication date: January 28, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Suguru MOTEGI, Nobutaka SASAKI
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Publication number: 20200098550Abstract: In a plasma processing apparatus, a table has a wafer support to hold a wafer and a peripheral segment surrounding the wafer support and having through-holes. The peripheral segment has an upper surface lower than that of the wafer support. An outer focus ring is disposed over the peripheral segment and has a recess or a cutout at an inner portion of the outer focus ring, and the recess or cutout has through-holes. An inner focus ring is disposed in the recess or cutout of the outer focus ring. Lift pins respectively extend through the through-holes of the peripheral segment and the through-holes of the recess or cutout of the outer focus ring. Shift mechanisms control shift of the respective lift pins.Type: ApplicationFiled: September 25, 2019Publication date: March 26, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Shuichi TAKAHASHI, Takaharu MIYADATE, Takaaki KIKUCHI, Atsushi OGATA, Nobutaka SASAKI, Takashi TAIRA
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Patent number: 10264630Abstract: A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.Type: GrantFiled: February 25, 2015Date of Patent: April 16, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Ryoichi Yoshida, Hiraku Murakami, Nobutaka Sasaki
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Patent number: 10249478Abstract: A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber.Type: GrantFiled: December 15, 2014Date of Patent: April 2, 2019Assignee: Tokyo Electron LimitedInventors: Nobutaka Sasaki, Takashi Kitazawa, Akihiro Yoshimura
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Patent number: 9818582Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.Type: GrantFiled: June 13, 2016Date of Patent: November 14, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Hiraku Murakami, Nobutaka Sasaki, Shigeru Senzaki, Takanori Banse, Hiroshi Tsujimoto, Keigo Toyoda
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Publication number: 20160372308Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.Type: ApplicationFiled: June 13, 2016Publication date: December 22, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Hiraku MURAKAMI, Nobutaka SASAKI, Shigeru SENZAKI, Takanori BANSE, Hiroshi TSUJIMOTO, Keigo TOYODA
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Publication number: 20150245460Abstract: A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.Type: ApplicationFiled: February 25, 2015Publication date: August 27, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Ryoichi YOSHIDA, Hiraku MURAKAMI, Nobutaka SASAKI
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Publication number: 20150228462Abstract: In a plasma processing apparatus, a partition wall connects a mounting table and a bottom wall of a processing chamber. A power feed member is disposed within the space surrounded by the partition wall and connected to the mounting table. A driving frame extends into the space surrounded by the partition wall from the outside of the sidewall of the processing chamber to be connected to the bottom of the mounting table. A driving mechanism is disposed to the outside of the processing chamber to move the driving frame vertically. At the bottom of a gas exhaust space, an annular gas exhaust passageway is defined by the partition wall and the sidewall and bottom wall of the processing chamber. The gas exhaust unit is interconnected to the gas exhaust passageway through a gas exhaust port at the bottom wall of the processing chamber.Type: ApplicationFiled: September 11, 2013Publication date: August 13, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akihiro Yoshimura, Yasushi Masuda, Nobutaka Sasaki
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Publication number: 20150179415Abstract: A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber.Type: ApplicationFiled: December 15, 2014Publication date: June 25, 2015Inventors: Nobutaka SASAKI, Takashi KITAZAWA, Akihiro YOSHIMURA
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Patent number: 6233961Abstract: In a main circuit (12) of refrigerant circuitry (11), a liquid-side shutoff valve (23) is provided between a liquid receiver (19) and an indoor heat exchanger (20). Downstream of the liquid-side shutoff valve (23), a refrigerant charging section (40A) including a refrigerant charge valve (40) connectable with a refrigerant cylinder (31) is provided. The refrigerant circuitry (11) includes a pressure relieving circuit (SVP) for conducting refrigerant in a high-pressure-side line of the refrigerant circuitry (11) to a low-pressure-side line thereof in additional refrigerant charging operation executed by operating compressors (15, 22) with the liquid-side shutoff valve (23) closed.Type: GrantFiled: July 14, 1999Date of Patent: May 22, 2001Assignee: Daikin Industries, Ltd.Inventors: Toshio Ashida, Shinichi Nakaishi, Ikuji Ishii, Nobutaka Sasaki, Shin Furuta