Abstract: According to the present invention, a semiconductor device includes a first semiconductor device, a second semiconductor device, an AC output terminal, a first shunt resistor connected to the first semiconductor device at one end thereof and the AC output terminal at the other end thereof, a second shunt resistor connected to the second semiconductor device at one end thereof and the AC output terminal at the other end thereof, a first wiring connecting the one end of the first shunt resistor and the one end of the second shunt resistor, a second wiring connecting the other end of the first shunt resistor and the other end of the second shunt resistor and a first sense resistor circuit including a first sense resistor and a second sense resistor connected in series between the one end of the first shunt resistor and the one end of the second shunt resistor.

Abstract: Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

Abstract: Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.

Abstract: A semiconductor device has a substrate, a semiconductor element, an electrode lead, and a sealing resin portion. The substrate has a main surface on which a circuit pattern is formed. The semiconductor element has first and second surfaces, and is arranged on the substrate such that the first surface faces the main surface. The electrode lead has one end joined to the circuit pattern and the other end joined by soldering to the second surface. The other end has a plurality of portions divided from each other. The sealing resin portion seals the semiconductor element and the electrode lead. Thus, there can be provided a semiconductor device that has relieved thermal stress at a joining portion of the electrode lead, and therefore is less subject to fatigue failure.

Abstract: A semiconductor device which includes a radiating plate, a wiring patterned layer on the radiating plate via an insulating layer, at least one semiconductor chip mounted on the wiring patterned layer. The semiconductor chip has a surface electrode. The semiconductor device further includes a conductive lead plate electrically connected with the surface electrode of the semiconductor chip, and a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions. The resin package covers the wiring patterned layer, the semiconductor chip, the conductive lead plate, and at least a portion of the radiating plate. The conductive lead plate extends in a direction which provides the resin package with the maximum linear expansion coefficient. In the semiconductor device so structured, the warpage of the resin package is reduced both in longitudinal and transverse directions.

Abstract: A semiconductor device has a substrate, a semiconductor element, an electrode lead, and a sealing resin portion. The substrate has a main surface on which a circuit pattern is formed. The semiconductor element has first and second surfaces, and is arranged on the substrate such that the first surface faces the main surface. The electrode lead has one end joined to the circuit pattern and the other end joined by soldering to the second surface. The other end has a plurality of portions divided from each other. The sealing resin portion seals the semiconductor element and the electrode lead. Thus, there can be provided a semiconductor device that has relieved thermal stress at a joining portion of the electrode lead, and therefore is less subject to fatigue failure.

Abstract: A power semiconductor apparatus is provided with power controlling semiconductor modules connected in parallel to each other. Each power controlling semiconductor module controls driving of a power semiconductor device. The power semiconductor apparatus includes a transmission circuit and a reception circuit provided in one and another power controlling semiconductor modules, respectively. The transmission circuit transmits a predetermined communication signal to another power controlling semiconductor module based on a predetermined activation signal generated by one power controlling semiconductor module. The reception circuit receives the transmitted communication signal, and controls driving control operation of another power controlling semiconductor module based on the received communication signal.

Abstract: One of the aspects of the present invention is to provide a semiconductor device, which includes a radiating plate, a wiring patterned layer on the radiating plate via an insulating layer, at least one semiconductor chip mounted on the wiring patterned layer. The semiconductor chip has a surface electrode. The semiconductor device further includes a conductive lead plate electrically connected with the surface electrode of the semiconductor chip, and a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions. The resin package covers the wiring patterned layer, the semiconductor chip, the conductive lead plate, and at least a portion of the radiating plate. The conductive lead plate extends in a direction which provides the resin package with the maximum linear expansion coefficient. In the semiconductor device so structured, the warpage of the resin package is reduced both in longitudinal and transverse directions.

Abstract: A power semiconductor apparatus is provided with power controlling semiconductor modules connected in parallel to each other. Each power controlling semiconductor module controls driving of a power semiconductor device. The power semiconductor apparatus includes a transmission circuit and a reception circuit provided in one and another power controlling semiconductor modules, respectively. The transmission circuit transmits a predetermined communication signal to another power controlling semiconductor module based on a predetermined activation signal generated by one power controlling semiconductor module. The reception circuit receives the transmitted communication signal, and controls driving control operation of another power controlling semiconductor module based on the received communication signal.

Abstract: Upon an occurrence of a failure in the throttle valve driving system of an engine provided with a throttle actuator 7, a vehicle control device for controlling the output power of the engine disables some of the cylinders (1) in accordance with the outputs of the acceleration pedal position sensor 61 and the throttle position sensor 17 when the vehicle is being driven (i.e., when the transmission is not in the neutral or the parking position), and (2) in accordance with the output of the throttle position sensor 17 when the vehicle is stopped (i.e., when the transmission is in the neutral or the parking position). Further, the vehicle control device effects fuel cut when the rpm of the engine exceeds a predetermined level. Thus, even upon an occurrence of a failure in the throttle valve drive system, the output power of the engine can be safely controlled solely by means of the acceleration pedal when the vehicle is driven, and is regulated to an appropriate level when the vehicle is stopped.

Abstract: An apparatus for controlling air supply to an internal combustion engine comprises a main intake pipe for supplying air to the engine, a throttle valve disposed in the main intake pipe for controlling flow rate of the air supplied to the engine in dependence on depression of an accelerator pedal, a plurality of bypass passages disposed in parallel with the main intake pipe for allowing the air to be supplied to the engine by bypassing the throttle valve, a plurality of bypass valves installed in the plurality of bypass passages, respectively, a diagnosis means for diagnosing the throttle valve and devices associated therewith as to occurrence of abnormality, and a controller responsive to detection of the abnormality to close the throttle valve while allowing the bypass valves to control the intake air flow in dependence on depression of the accelerator pedal. The controller responds to detection of the abnormality for shifting a range of engine operation from a normal operation range.

Abstract: An intake air flow control system for an internal combustion engine of a motor vehicle comprises an accelerator pedal depression sensor for detecting depression depth of an accelerator pedal, a throttle actuator for regulating opening degree of a throttle valve in dependence on the depression depth of the accelerator pedal, a bypass intake passage which bypasses an intake pipe at a location where the throttle valve is disposed, a bypass control valve installed in the bypass intake passage, an abnormality detector for detecting abnormality of control of the throttle actuator, and a controller for controlling the opening degree of the bypass control valve in dependence on depression depth of the accelerator pedal in response to detection of abnormality of in the control performed through the throttle actuator. Operation of the engine can be fail-safed even upon occurrence of failure in the throttle control system in the fully closed state of the throttle valve.

Abstract: A method of processing signal for a thermal type flow sensor having a temperature dependence resistance employing platinum and the like and a holding member made of alumina for holding it so as to compensate for response delay when fluid flow is changed, in which, when the fluid flow is maintained in a stationary state, the so-called equilibrium state, by steps of setting in advance the relation between a flow related value which changes according to flow change and a first operational value showing the temperature characteristic of the holding member which changes according to flow so as to make the flow related value as a parameter, calculating the first operational value from the flow related value when flow is detected in accordance with the predetermined relation, comparing the calculated first operational value with the second operational value which is set in relation with the first operational value, correcting the second operational value so that it approximates the first operational value according

Abstract: An engine control apparatus has an intake air quantity detector which detects an intake air quantity to an engine, a controller which controls the engine in response to the output of the intake air quantity detector a load detecting detector which detects a load to the engine, and a clip device the output of the intake air quantity detecting means at a second value when a first time has passed after the load of engine has reached a predetermined value or higher.

Abstract: A method of processing a signal of a thermal flow-rate sensor, provides a temperature monitor for monitoring a temperature at a representative point on a substrate support member; obtains the temperature at the representative point corresponding to the flow rate by use of the temperature monitor; and corrects an output of the sensor in accordance with a value corresponding to the temperature as well as a value corresponding to the temperature at the representative point when the flow rate is in a steady state.