Abstract: The present invention provides an electrolyzed water producing apparatus capable of efficiently producing electrolyzed water containing hypochlorous acids and of being installed stably.

Abstract: The present invention provides an electrolyzing apparatus that includes a detector configured to detect an abnormality in a electrolytic bath and thereby enables a quick detection of the occurrence of the abnormality and that is less prone to a malfunction in which, due to an environmental change, a normal state is misjudged as abnormal and electrolysis is stopped. An electrolyzing apparatus of the present invention includes an electrolyzing section and a detecting section, the electrolyzing section being configured to receive an electrolytic substance, electrolyze the electrolytic substance to obtain an electrolysis product, and discharge the electrolysis product. The electrolyzing section includes electrolysis electrodes.

Abstract: A washing machine of the present invention includes an electrolyzed water generating unit and a wash tub. The electrolyzed water generating unit includes an electrolytic solution supplying unit and an electrolysis unit including an electrolysis electrode pair. The electrolytic solution supplying unit is provided so as to supply an aqueous solution of an electrolyte for generating electrolyzed water to the electrolysis unit. The electrolyte for generating electrolyzed water contains an alkali metal chloride and a substance that makes an aqueous solution acidic. The electrolysis unit is provided so that the aqueous solution of the electrolyte for generating electrolyzed water is electrolyzed using the electrolysis electrode pair to generate an electrolyzed water. The electrolyzed water generating unit is provided so as to supply the electrolyzed water generated by the electrolysis unit to the wash tub.

Abstract: An electrolyzed water generating device of the present invention includes an electrolytic solution supplying unit and an electrolysis unit including an electrolysis electrode pair. The electrolytic solution supplying unit is provided so as to supply an aqueous solution of an electrolyte for generating electrolyzed water to the electrolysis unit. The electrolysis unit is provided so that the aqueous solution of the electrolyte for generating electrolyzed water is electrolyzed using the electrolysis electrode pair to generate an electrolyzed water. The electrolyte for generating electrolyzed water contains an alkali metal chloride and a substance that makes an aqueous solution acidic. The electrolyzed water generating device generates an electrolyzed water having a pH of more than 6.5 and less than 8.0.

Abstract: An electrolysis device of the present invention includes an electrolysis unit. The electrolysis unit includes a channel for fluid to be treated, at least one electrolysis electrode pair, a flow inlet, and a flow outlet. The electrolysis electrode pair is disposed so as to incline with respect to a vertical direction and includes an upper electrode and a lower electrode disposed so as to face each other. The channel for fluid to be treated is disposed so that a fluid that has flowed in from the flow inlet flows through an interelectrode channel between the upper electrode and the lower electrode from a lower side to an upper side and flows out from the flow outlet.

Abstract: The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

Abstract: A light emitting device according to the present invention comprises: a light emitting element including a semiconductor layer, a first electrode, a dielectric layer sandwiched between the semiconductor layer and the first electrode, and a light emitter; and a power supply circuit for applying a voltage between the semiconductor layer and the first electrode, wherein the light emitter is formed in at least one region of regions in the semiconductor layer, in the dielectric layer, between the semiconductor layer and the dielectric layer, and between the first electrode and the dielectric layer, the light emitting element emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as a positive electrode and the first electrode serves as a negative electrode, the second case using a current applied to the dielectric layer under a condition that the semic

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

Abstract: A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.

Abstract: A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

Abstract: A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

Abstract: A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

Abstract: A variable resistance functional body has an insulator interposed between a first electrode and a second electrode and interposed between a third electrode and a fourth electrode. The insulator contains a plurality of conductive particles. The conductive particles are formed by implanting a substance for forming the conductive particles into the insulator by the negative ion implantation method. The conductive particles are provided so that an electrical resistance between the third electrode and the fourth electrode changes on the basis of a size effect or a change in size between before and after application of a prescribed voltage across the first electrode and the second electrode.

Abstract: A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.

Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

Abstract: A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.