Patents by Inventor Nobutoshi Daimon

Nobutoshi Daimon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sol of ultra-fine particles of layered structure material
    Patent number: 4077938
    Abstract: This invention relates to a sol of ultra-fine particles of layered structure material selected from a group of montmorillonite, hectorite, tetra-silicic mica and taeniolite, characterized in that said layered structure material is hydrophobed by treatment with organic material selected from a group of titanic acid ester; zirconic acid ester; silanes having one of methoxy-, ethoxy- and silanol-radicals and one of vinyl-, epoxy-, acryl- and amino-radicals; .beta.-diketones mixed with lauryl amine; titanium amide; zirconium amide; and cationized silicone oil.
    Type: Grant
    Filed: February 13, 1976
    Date of Patent: March 7, 1978
    Assignee: Motoyuki Imai
    Inventors: Nobutoshi Daimon, Toichiro Izawa, Motoyuki Imai
  • Synthetic tetra-silicic mica and water sol thereof
    Patent number: 4067819
    Abstract: This invention relates to a process for producing a tetra-silicic mica having the formula Na.sub.0.6 - 0.8 Mg.sub.2.6 - 2.7 (Si.sub.4 O.sub.10)F.sub.2 which comprises mixing components selected from the group of sodium fluoride (NaF, sodium silicofluoride (Na.sub.2 SiF.sub.6), magnesium fluoride (MgF.sub.2), magnesia (MgO) and silica (SiO.sub.2) in a mole ratio of (a) 1 - 1.2 NaF : 0.5 - 1.2 MgF.sub.2 : 2 MgO : 4 SiO.sub.2 or (b) 0.5 - 0.8 Na.sub.2 SiF.sub.6 : 0.5 - 1.2 MgF.sub.2 : 2 MgO : 4 SiO.sub.2, melting the mixture at a temperature of 1300.degree. C to 1500.degree. C and cooling the melt to obtain a crystal.This invention further relates to a water sol of flake-like ultra-fine particles of tetra-silicic mica produced in accordance with claim 1, wherein most of the flake-like particles dispersed in water have a thickness of less than 50 A and an average diameter of the flat plane of between 500 A and 3000 A.
    Type: Grant
    Filed: March 22, 1976
    Date of Patent: January 10, 1978
    Inventors: Nobutoshi Daimon, Kunio Kitajima
  • Synthetic taeniolite and process of producing the same
    Patent number: 4045241
    Abstract: This invention relates to a process of producing taeniolite having the formula, LiMg.sub.2 Li(X.sub.4 O.sub.10)F.sub.2 (wherein X represents Si or Ge), which comprises mixing (a) lithium compound selected from the group of lithium oxide and lithium fluoride, (b) magnesium compound selected from the group of magnesium fluoride and magnesium oxide and (c) silicon oxide (or germanium oxide) in such a manner that the mixing ratio of Li : Mg : Si : (or Ge) : F becomes 1 : 1 : 2 : 1 (the fluoride is included in an excess amount of 10 - 30% to compensate the loss of fluorine during the process); melting the mixture at about 1,250.degree. C-1,450.degree. C and slowly cooling until the melt crystallizes.
    Type: Grant
    Filed: March 3, 1976
    Date of Patent: August 30, 1977
    Inventors: Nobutoshi Daimon, Toichiro Izawa
  • Sol of ultra-fine particles of synthetic hectorite
    Patent number: 3936383
    Abstract: This invention relates to a sol of ultra-fine particles of synthetic hectorite prepared by swelling and cleaving Li-hectorite having a formula of Li.sub.1/3 Mg.sub.2-2/3 Li.sub.1/3 (Si.sub.4 O.sub.10)F.sub.2 or Na-hectorite having a formula of Na.sub.1/3 Mg.sub.2-2/3 Li.sub.1/3 (Si.sub.4 O.sub.10)F.sub.2 in water or an organic solvent.This invention further relates to a sol of the above hectorite in which Li or Na ions co-ordinated between lattice layers of the hectorite are ion-exchanged with non-hydratable cations.This invention still further relates to a product prepared by using the above sol.
    Type: Grant
    Filed: May 6, 1974
    Date of Patent: February 3, 1976
    Inventors: Nobutoshi Daimon, Toichiro Izawa