Patents by Inventor Nobutoshi Fukuden

Nobutoshi Fukuden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5805023
    Abstract: An amplifier is equipped with an input terminal and an output terminal and has a transistor as an amplifying element, said amplifier comprising:a negative feedback circuit provided in said transistor; anda parallel circuit which includes an inductive element and a resistive element connected in series between the input terminal of said amplifier and an input terminal of said transistor, or between the output terminal of said amplifier and an output terminal of said transistor.
    Type: Grant
    Filed: October 31, 1995
    Date of Patent: September 8, 1998
    Assignee: Fujitsu Limited
    Inventor: Nobutoshi Fukuden
  • Patent number: 5561592
    Abstract: In a hybrid integrated circuit module in which circuit components, including semiconductor devices and chip components, are integrated and which is bonded onto a heat-sinking substrate, a substrate for mounting chip components is made of a low thermal conductivity material and is bonded onto the heat-sinking substrate; a base plate for mounting semiconductor devices is made of a high thermal conductivity material and is bonded onto the heat-sinking substrate; a hollow cover covers a space above the base plate to make an enclosure between the base plate and the cover; a sealing means hermetically seals the enclosure; and a plurality of interconnection leads is formed through the cover to electrically connect a circuit on the base plate and a circuit on the substrate and for testing operating signals in the semiconductor devices.
    Type: Grant
    Filed: December 14, 1994
    Date of Patent: October 1, 1996
    Assignee: Fujitsu Limited
    Inventors: Nagahisa Furutani, Nobutoshi Fukuden
  • Patent number: 4298846
    Abstract: A high-power and high-frequency semiconductor device assembled on a base, comprising a semiconductor chip, capacitors for grounding high-frequency components, and capacitors for input impedance matching, the capacitors being arranged on a metal surface of the base.
    Type: Grant
    Filed: March 10, 1980
    Date of Patent: November 3, 1981
    Assignee: Fujitsu Limited
    Inventors: Yutaka Hirano, Nobutoshi Fukuden, Toshiaki Saito