Abstract: Semiconductor devices laterally surrounded by at least one dielectric material portion are formed over a substrate. At least one edge seal ring structure is formed around the semiconductor devices and the at least one dielectric material portion. One or more of the at least one edge seal ring structure has a horizontal cross-sectional profile that includes laterally-extending regions that extend laterally with a uniform width between an inner sidewall and an outer sidewall, and notch regions connecting neighboring pairs of the laterally-extending regions and having a greater width than the uniform width. Cavities in the laterally-extending regions are connected to cavities in the notch regions to allow outgassing from the material of the at least one edge seal ring structure.

Abstract: Semiconductor devices laterally surrounded by at least one dielectric material portion are formed over a substrate. At least one edge seal ring structure is formed around the semiconductor devices and the at least one dielectric material portion. One or more of the at least one edge seal ring structure has a horizontal cross-sectional profile that includes laterally-extending regions that extend laterally with a uniform width between an inner sidewall and an outer sidewall, and notch regions connecting neighboring pairs of the laterally-extending regions and having a greater width than the uniform width. Cavities in the laterally-extending regions are connected to cavities in the notch regions to allow outgassing from the material of the at least one edge seal ring structure.

Abstract: A plurality of horizontal top surfaces that are vertically offset is formed on a substrate. An alternating stack of insulating layers and spacer material layers is formed and patterned to provide a plurality of staircase regions that are laterally spaced apart and overlies a respective one of the plurality of horizontal top surfaces of the substrate. Memory stack structures are formed through the alternating stack. The spacer material layers are formed as, or are replaced with, electrically conductive layers. A set of contact via cavities are formed over the electrically conductive layers.

Abstract: A plurality of horizontal top surfaces that are vertically offset is formed on a substrate. An alternating stack of insulating layers and spacer material layers is formed and patterned to provide a plurality of staircase regions that are laterally spaced apart and overlies a respective one of the plurality of horizontal top surfaces of the substrate. Memory stack structures are formed through the alternating stack. The spacer material layers are formed as, or are replaced with, electrically conductive layers. A set of contact via cavities are formed over the electrically conductive layers.