Abstract: A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Abstract: A substrate package structure includes bumps disposed on a surface side of a first substrate and a surface side of a second substrate. The bump at the first substrate and the bump at the second substrate are press-fitted to each other while the one surface of the first substrate and the one surface of the second substrate are confronted to each other, thereby connecting the first and second substrates to each other. The bump at the first substrate is constructed so that the tip portion thereof is designed to have a flat surface, and the bump at the second substrate is constructed so that the tip portion is designed to have a projecting portion narrower than the tip portion of the bump at the first substrate.

Abstract: A wire bonding method for bonding a plurality of conducting wires to connect first conductors and second conductors has the following steps. 1) Bonding a first conducting ball on a first first conductor. 2) Bonding a first conducting wire on the first conducting ball, the first conducting wire being connected to a first second conductor. 3) Bonding a second conducting ball on a second first conductor. 4) Bonding a second conducting wire on the second conducting ball, the second conducting wire being connected to a second second conductor. Here, the second first conductor or the second second conductor is the first conducting wire bonded on the first conducting ball.

Abstract: A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.

Abstract: A substrate package structure includes bumps disposed on a surface side of a first substrate and a surface side of a second substrate. The bump at the first substrate and the bump at the second substrate are press-fitted to each other while the one surface of the first substrate and the one surface of the second substrate are confronted to each other, thereby connecting the first and second substrates to each other. The bump at the first substrate is constructed so that the tip portion thereof is designed to have a flat surface, and the bump at the second substrate is constructed so that the tip portion is designed to have a projecting portion narrower than the tip portion of the bump at the first substrate.

Abstract: A wire bonding method for bonding a plurality of conducting wires to connect first conductors and second conductors has the following steps. 1) Bonding a first conducting ball on a first first conductor. 2) Bonding a first conducting wire on the first conducting ball, the first conducting wire being connected to a first second conductor. 3) Bonding a second conducting ball on a second first conductor. 4) Bonding a second conducting wire on the second conducting ball, the second conducting wire being connected to a second second conductor. Here, the second first conductor or the second second conductor is the first conducting wire bonded on the first conducting ball.