Abstract: The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

Abstract: The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z]pOq and a compound of formula [A]a[M]b[X]c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.

Abstract: The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z]pOq and a compound of formula [A]a[M]b[X]c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.

Abstract: The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.

Abstract: The invention relates to perovskite compounds which have surprisingly good emission properties, particularly photoluminescent emission properties, in the blue region of the visible spectrum. These perovskites contain a mixture of cations or a mixture of halides, or both. The invention also relates to a photoactive material containing the perovskite species of the invention; to an optoelectronic device containing the photoactive material of the invention; to a method of producing blue light; and to the use of the photoactive material of the invention to emit blue light or as a phosphor.

Abstract: The invention relates to an optoelectronic material comprising a compound, wherein the compound comprises: (i) one or more cations, A; (ii) one or more first B cations, Bn+; (iii) one or more second B cations, Bm+; and (iv) one or more chalcogen anions, X; wherein the one or more first B cations, Bn+ are different from the one or more second B cations, Bm+; n represents the oxidation state of the first B cation and is a positive integer of from 1 to 7 inclusive; m represents the oxidation state of the second B cation and is a positive integer of from 1 to 7 inclusive; and n+m is equal to 8.

Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.

Abstract: The invention relates to a process for producing a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18. The process is capable of producing crystalline A/M/X materials while precisely controlling their stoichiometry, leading to products with finely tunable optical properties such as peak emission wavelength. The invention also relates to process for producing a thin film comprising the crystalline A/M/X material of the invention, and to a thin film obtainable by the process of the invention. An optoelectronic device comprising the thin film is also provided.

Abstract: The invention relates to perovskite compounds which have surprisingly good emission properties, particularly photoluminescent emission properties, in the blue region of the visible spectrum. These perovskites contain a mixture of cations or a mixture of halides, or both. The invention also relates to a photoactive material containing the perovskite species of the invention; to an optoelectronic device containing the photoactive material of the invention; to a method of producing blue light; and to the use of the photoactive material of the invention to emit blue light or as a phosphor.

Abstract: The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z]pOq and a compound of formula [A]a[M]b[X]c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.

Abstract: The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.

Abstract: A motor function measurement apparatus that acquires measurement data including at least one of an acceleration or a trunk inclination angle of a user, the measurement data being measured during a measurement period in which the user performs a predetermined action, and that, based on the measurement data, calculates a motor function evaluation value related to a motor function of the user.

Abstract: A velocity calculation apparatus (100) includes an acceleration sensor (10), an Acc integration unit (20), and a control unit (50). The acceleration sensor (10) measures acceleration of a walking or running subject. The Acc integration unit (20) integrates the acceleration measured by the acceleration sensor (10), during a unit time (UT) longer than the walking or running cycle, thus to generate an integrated synthetic value. The control unit (50) applies the integrated synthetic value to an approximation established in advance so as to calculate the velocity (v) of the subject. With such operation that barely imposes computational load, the velocity (v) of the subject can be calculated with practically acceptable accuracy.

Abstract: A bone mineral density meter comprises first input device which enters a sound of speed in a bone; second input device which enters a weight of the person to be measured; third input device which enters fat free mass of the person to be measured; arithmetic device which computes the bone mineral density based on data from said first input device and data from said second input device and said third input device; and display which displays a bone mineral density value computed by said arithmetic device. The present invention allows a bone mineral density to be safely estimated, at a low cost, and with proper accuracy and without having to worry about exposure to X-rays.

Abstract: A bone mineral density meter comprises first input device which enters a sound of speed in a bone; second input device which enters a weight of the person to be measured; third input device which enters fat free mass of the person to be measured; arithmetic device which computes the bone mineral density based on data from said first input device and data from said second input device and said third input device; and display which displays a bone mineral density value computed by said arithmetic device. The present invention allows a bone mineral density to be safely estimated, at a low cost, and with proper accuracy and without having to worry about exposure to X-rays.

Abstract: An improved body-fat measuring apparatus for measuring in-vivo impedance and computing body-fat quantity can obtain accurate and stable in-vivo impedance even if hand electrodes are used for the measurement. The apparatus includes a body-height measuring device having a footstool on which a examinee mounts, a measuring terminal to contact with the top of examinee's head, and a cursor movable in upward and downward direction with holding said measuring terminal, and also includes in-vivo impedance measuring electrodes integrated with said cursor, wherein said measuring electrodes are located at a height approximately corresponding to the examinee's shoulder as said measuring terminal of said body-height measuring device contacts with the top of examinee's head so that the angle between torso region and arm region of an examinee becomes approximately right angle when the examinee grasps said measuring electrodes.

Abstract: A magnetic disk for storing control data for controlling an electronic still camera. The magnetic disk is the same as used for recording an image and a sound. The control data is stored in a recording track in the form of DPSK-modulated data. A plurality of control data can be stored in a plurality of recording tracks, i.e., many different kinds of control data can be stored in the magnetic disk. The electronic still camera is controlled in accordance with the control data obtained from the magnetic disk.

Abstract: A record and play-back system in a still video device, in which a picture signal and an audio signal associated therewith are recorded on a first track and a second track of a recording medium, wherein a first code signal and a second code signal are recorded together with the associated picture signal and the associated audio signal to discriminate that the respective picture signal and audio signal are recorded together with the corresponding audio signal or the picture signal. The second track is played-back when the first code signal is recorded on the first track upon play-back of the first track. The audio signal can be be post-recorded on the second track when no signal is recorded on the second track.

Abstract: A record and play-back system in a still video device, in which a picture signal and an audio signal associated therewith are recorded on a first track and a second track of a recording medium, wherein a first code signal and a second code signal are recorded together with the associated picture signal and the associated audio signal to discriminate that the respective picture signal and audio signal are recorded together with the corresponding audio signal or the picture signal. The second track is played-back when the first code signal is recorded on the first track upon play-back of the first track. The audio signal can be be post-recorded on the second track when no signal is recorded on the second track.