Abstract: A protective film forming method for forming a protective film of resin on a work surface of a wafer.

Abstract: A method for breaking an adhesive film mounted on the back of a wafer having a plurality of streets formed in a lattice pattern on the face of the wafer, and having devices formed in a plurality of regions demarcated by the plurality of streets, the devices being divided individually, is adapted to break the adhesive film along the outer peripheral edges of the individual devices, with the adhesive film being stuck to the surface of a dicing tape mounted on an annular frame. The method comprises: a laser processing step of projecting a laser beam with a pulse width of 100 picoseconds or less onto the adhesive film through gaps between the individually divided devices to form deteriorated layers in the adhesive film along the outer peripheral edges of the individual devices; and an adhesive film breaking step of exerting external force on the adhesive film having the deteriorated layers formed therein, to break the adhesive film along the deteriorated layers.

Abstract: A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.

Abstract: A method for breaking an adhesive film mounted on the back of a wafer having a plurality of streets formed in a lattice pattern on the face of the wafer, and having devices formed in a plurality of regions demarcated by the plurality of streets, the devices being divided individually, is adapted to break the adhesive film along the outer peripheral edges of the individual devices, with the adhesive film being stuck to the surface of a dicing tape mounted on an annular frame. The method comprises: a laser processing step of projecting a laser beam with a pulse width of 100 picoseconds or less onto the adhesive film through gaps between the individually divided devices to form deteriorated layers in the adhesive film along the outer peripheral edges of the individual devices; and an adhesive film breaking step of exerting external force on the adhesive film having the deteriorated layers formed therein, to break the adhesive film along the deteriorated layers.

Abstract: A wafer laser processing method for forming a groove in a wafer having a protective film on the processing surface of a substrate along a predetermined processing line, comprising a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines; and a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam set to an output at which the substrate can be processed, along the first grooves.

Abstract: A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.

Abstract: A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer.

Abstract: A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.

Abstract: A wafer laser processing method for forming a groove in a wafer having a protective film on the processing surface of a substrate along a predetermined processing line, comprising a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines; and a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam set to an output at which the substrate can be processed, along the first grooves.

Abstract: A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber. The protective film agent is coated on a surface of a wafer, which is to be processed, and is then dried to form a protective film. Laser dicing through the protective film produces chips from the wafer. As a result, deposition of debris can be effectively prevented on the entire face of the chips, including their peripheral edge portions.

Abstract: A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.

Abstract: A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.

Abstract: A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.