Abstract: A directional coupler includes a multilayer structure formed by stacking a plurality of dielectric layers including first and second dielectric layers; a main line including first and second main line portions that are electrically connected in series to each other; and a sub line electromagnetically coupled with the main line, the sub line including first and second sub line portions that are electrically connected in series to each other. The first main line portion and the first sub line portion are provided on the first dielectric layer. The second main line portion and the second sub line portion are provided on the second dielectric layer. In planar view along a stacking direction, the first main line portion and the second sub line portion overlap one another, and the first sub line portion and the second main line portion overlap one another.

Abstract: A directional coupler includes a multilayer structure formed by stacking a plurality of dielectric layers including first and second dielectric layers; a main line including first and second main line portions that are electrically connected in series to each other; and a sub line electromagnetically coupled with the main line, the sub line including first and second sub line portions that are electrically connected in series to each other. The first main line portion and the first sub line portion are provided on the first dielectric layer. The second main line portion and the second sub line portion are provided on the second dielectric layer. In planar view along a stacking direction, the first main line portion and the second sub line portion overlap one another, and the first sub line portion and the second main line portion overlap one another.

Abstract: A semiconductor switch device and a method of manufacturing the semiconductor switch device are provided. The semiconductor switch device includes semiconductor elements on a single semiconductor substrate. At least one of the semiconductor elements constitutes a switch circuit and at least one other of the semiconductor elements constitutes a logic (connection) circuit. Each semiconductor element includes a recess, a gate electrode in the recess, a drain electrode, and a source electrode. In one representative aspect, the gate electrode in the switch circuit can have a rectangular external shape in section, and the gate electrode in the connection circuit has a shape in section other than rectangular.

Abstract: A high-frequency module includes first and second switch IC elements and a substrate. The first and second switch IC elements are the same or substantially the same IC chips, and are mounted in the same or substantially the same orientation. The first switch IC element is mounted on the substrate. The second switch IC element is mounted above the first switch IC element. Due to wire bonding, the individual pad electrodes of the first and second switch IC elements are connected to the land electrodes of the substrate, which are to be connected to the individual pad electrodes. Between a pad electrode and a land electrode connected to each other, another land electrode is not provided.

Abstract: A high-frequency module includes first and second switch IC elements and a substrate. The first and second switch IC elements are the same or substantially the same IC chips, and are mounted in the same or substantially the same orientation. The first switch IC element is mounted on the substrate. The second switch IC element is mounted above the first switch IC element. Due to wire bonding, the individual pad electrodes of the first and second switch IC elements are connected to the land electrodes of the substrate, which are to be connected to the individual pad electrodes. Between a pad electrode and a land electrode connected to each other, another land electrode is not provided.

Abstract: A semiconductor switch device and a method of manufacturing the semiconductor switch device are provided. The semiconductor switch device includes semiconductor elements on a single semiconductor substrate. At least one of the semiconductor elements constitutes a switch circuit and at least one other of the semiconductor elements constitutes a logic (connection) circuit. Each semiconductor element includes a recess, a gate electrode in the recess, a drain electrode, and a source electrode. In one representative aspect, the gate electrode in the switch circuit can have a rectangular external shape in section, and the gate electrode in the connection circuit has a shape in section other than rectangular.

Abstract: A semiconductor device (antenna switch) causes a switch circuit to perform a switching operation by using a logic circuit. The switch circuit and the logic circuit are formed on a single semiconductor substrate and a shield conductor is provided or arranged directly over the logic circuit. The shield conductor can have an air bridge structure and can be connected to a ground terminal.

Abstract: On a mounting surface of a multilayered component as a surface mounting component, an isolated electrode is arranged so as to be isolated from other terminal electrodes on the mounting surface. For solder applied to the isolated electrode, the application range can be securely limited to an area within the isolated electrode.

Abstract: A high-frequency module prevents distortion in first and second diodes of a high-frequency switch in a communication system which is not selected without providing a negative power source, and a communication apparatus includes such a high-frequency module. The high-frequency module includes a diplexer having inductors and capacitors, and high-frequency switches including first and second diodes, transmission lines, inductors, and capacitors.

Abstract: A high-frequency module prevents distortion in first and second diodes of a high-frequency switch in a communication system which is not selected without providing a negative power source, and a communication apparatus includes such a high-frequency module. The high-frequency module includes a diplexer having inductors and capacitors, and high-frequency switches including first and second diodes, transmission lines, inductors, and capacitors.