Abstract: A proton conductor is in contact with a catalyst containing platinum. The proton conductor includes a cationic organic molecule, a metal ion, and an oxoacid anion. A protic ionic liquid containing the cationic organic molecule and the oxoacid anion is coordinated to the metal ion to form a coordination polymer.

Abstract: In a method for manufacturing a membrane electrode assembly, a catalyst layer is bonded to a catalyst layer support made of a sublimation material by placing the catalyst layer support into contact with the catalyst layer. In the method, an electrolyte membrane is bonded to the catalyst layer by placing the electrolyte membrane into contact with the catalyst layer bonded to the catalyst layer support. In the method, the catalyst layer support is sublimated in a state where the electrolyte membrane is bonded to the catalyst layer.

Abstract: A proton conductor is in contact with a catalyst containing platinum. The proton conductor includes a cationic organic molecule, a metal ion, and an oxoacid anion. A protic ionic liquid containing the cationic organic molecule and the oxoacid anion is coordinated to the metal ion to form a coordination polymer.

Abstract: A fuel cell electrolyte includes: a porous member; and a proton conductive material supported by the porous member. The proton conductive material includes a metal ion, an oxoanion, and a proton coordination molecule. At least one of the oxoanion and the proton coordination molecule coordinates with the metal ion to provide a coordination polymer. A relative density is equal to or higher than 75%.

Abstract: A gas separator has an adsorbent, a circulation-passage constituting member, a circulator, an adsorption facilitator, and a desorption facilitator. The adsorbent adsorbs or desorbs carbon dioxide, and the adsorbent is made of a liquid. The circulation-passage constituting member therein has a space that defines a circulation passage in which the adsorbent flows. The circulator circulates the adsorbent in the space. The adsorption facilitator facilitates an adsorption of carbon dioxide to the adsorbent filling the space. The desorption facilitator facilitates a desorption of carbon dioxide from the adsorbent filling the space.

Abstract: A magnetic refrigeration material includes an alloy represented by a composition formula of La(Fe, Si)13H, and the alloy includes ?-Fe by a weight ratio lower than 1 wt % and a plurality of pores so that a packing fraction of the alloy is within a range from 85% to 99%.

Abstract: A surface treating method of a negative electrode for a magnesium secondary battery is provided, wherein the magnesium secondary battery includes: a negative electrode capable of releasing magnesium ions during discharging and capable of precipitating elemental magnesium during charging; a positive electrode capable of precipitating a magnesium oxide during the discharging and capable of releasing magnesium ions during the charging; and a non-aqueous ion conductor for conducting magnesium ions as conduction species. The surface treating method comprises initializing the negative electrode by performing the discharging to form a bare surface at a surface of the negative electrode.

Abstract: A gas separator has an adsorbent, a circulation-passage constituting member, a circulator, an adsorption facilitator, and a desorption facilitator. The adsorbent adsorbs or desorbs carbon dioxide, and the adsorbent is made of a liquid. The circulation-passage constituting member therein has a space that defines a circulation passage in which the adsorbent flows. The circulator circulates the adsorbent in the space. The adsorption facilitator facilitates an adsorption of carbon dioxide to the adsorbent filling the space. The desorption facilitator facilitates a desorption of carbon dioxide from the adsorbent filling the space.

Abstract: A magnesium secondary battery includes: a negative electrode for adsorbing and releasing a magnesium ion; a positive electrode for producing a magnesium oxide product in a discharging process; and a non-aqueous magnesium ion conductor disposed between the negative electrode and the positive electrode. The positive electrode includes an accelerator for promoting the magnesium oxide product, which is decomposed to a magnesium ion and an oxygen molecule easier than MgO. In this case, since the electrochemical reaction at the positive electrode in a charging process rapidly progresses, the magnesium secondary battery can charge and discharge repeatedly. Thus, the battery functions as a secondary battery sufficiently.

Abstract: A magnetic refrigeration material includes alloy represented by a composition formula of La(Fe, Si)13H, and the alloy includes ?-Fe by a weight ratio lower than 1 wt % and a plurality of pores so that a packing fraction of the alloy is within a range from 85% to 99%.

Abstract: A surface treating method of a negative electrode for a magnesium secondary battery is provided, wherein the magnesium secondary battery includes: a negative electrode capable of releasing magnesium ions during discharging and capable of precipitating elemental magnesium during charging; a positive electrode capable of precipitating a magnesium oxide during the discharging and capable of releasing magnesium ions during the charging; and a non-aqueous ion conductor for conducting magnesium ions as conduction species. The surface treating method comprises initializing the negative electrode by performing the discharging to form a bare surface at a surface of the negative electrode.

Abstract: A magnesium secondary battery includes: a negative electrode for adsorbing and releasing a magnesium ion; a positive electrode for producing a magnesium oxide product in a discharging process; and a non-aqueous magnesium ion conductor disposed between the negative electrode and the positive electrode. The positive electrode includes an accelerator for promoting the magnesium oxide product, which is decomposed to a magnesium ion and an oxygen molecule easier than MgO. In this case, since the electrochemical reaction at the positive electrode in a charging process rapidly progresses, the magnesium secondary battery can charge and discharge repeatedly. Thus, the battery functions as a secondary battery sufficiently.

Abstract: A filter device includes a super-conducting type filters connected in series with each other and is accommodated in a vacuum chamber. Operating temperatures of the filters are controlled to different temperatures from the outside of the vacuum chamber independently of each other. Each filter varies its filtering characteristics, particularly its central frequency of pass-band, in correspondence with the operating temperature, while maintaining the same pass-band width. As the filters operated at the different operating temperatures provide different filtering characteristics, the combined or resulting filtering characteristics of the filtering device can be adjusted as desired even after the filtering device is installed at a mobile telecommunication base station.

Abstract: Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for depositing the superconducting thin film. Before the processes for depositing the superconducting thin film and exposing the substrate to the electromagnetic wave, a dummy film is formed on the other surface of the substrate. The dummy film has absorbency of the electromagnetic wave which is higher than that of the substrate. The dummy film together with the substrate is exposed to the electromagnetic wave while the superconducting thin film is deposited on the one surface of the substrate. The superconducting thin film thus deposited has superconductivity and high quality crystal structure.

Abstract: A superconducting oxide thin film device is composed of a LaAlO.sub.3 substrate and a YBCO thin film with a BaCeO.sub.3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.

Abstract: A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece.

Abstract: A thin film transistor having an inverted stagger type structure is formed on a substrate. A gate film having a gate electrode portion is formed on the substrate. A gate insulating film is formed on the gate electrode portion of the gate film such that the gate insulating film is located entirely inside a perimeter defied by the outer edges of the gate electrode portion. A polycrystalline semiconductor film, which is an active layer of the transistor, is formed on the gate insulating film such that it is entirely inside a perimeter defined by the outer edges of the gate insulating layer. The polycrystalline semiconductor film, gate insulating film and gate film are selectively photoetched after being formed on the substrate. Source and drain electrode films are formed so that the electrode films electrically connect with the polycrystalline semiconductor film.

Abstract: Semiconductor chips are mounted in a supporting semiconductor substrate, with matching anisotropic (crystal plane) faces on the chips and substrate. The chips may extend above the substrate to facilitate connection together.

Abstract: A first polysilicon film serving as an erase gate is deposited on the major surface of a semiconductor substrate on which a field oxide film is formed, so that the surface of the first polysilicon film is roughened. The surface of the first polysilicon film is thermally oxidized to form a first thermal oxide film thereon. During the oxidation, the roughened surface of the first polysilicon film is flattened, and is duplicated by the surface of the first thermal oxide film. A second polysilicon film is deposited on the roughened surface of the first thermal oxide film. The back surface of the second polysilicon film is roughened by the roughened surface of the first thermal oxide film. In this case, the surface of the second polysilicon film is also roughened. The roughened surface of the second polysilicon film is thermally oxidized in the same manner as described above to flatten its surface and to form a second thermal oxide film, the surface of which is roughened.

Abstract: In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.