Abstract: A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.

Abstract: A non-volatile semiconductor memory device comprises a plurality of memory cells each including a semiconductor substrate of a first conductivity type having a main surface region, a control gate portion formed in said main surface region of the semiconductor substrate and consisting of an impurity diffusion region of a second conductivity type opposite to said first conductivity type, a reading transistor portion formed on the main surface region of the substrate and consisting of a MOS type transistor structure, and a floating gate portion formed over the control gate portion and the reading transistor portion. These memory cells differ from each other in an overlapping area ratio Ap/An, where An denotes an area of an over-lapping portion between the floating gate and the impurity diffusion region of the control gate portion, Ap represents an area of an overlapping portion between the floating gate and an active region of the reading transistor portion.

Abstract: One verify cell is connected to one word line, together with a plurality of array cells, and has a threshold value almost the same as the array cells. A write voltage or an erase voltage is applied to the array cells, setting the voltage applied to the verify cell at a small value, thereby electrically changing the threshold value of the verify cell. Alternatively, the sense ratio of a sense amplifier is changed with respect to the output of the verify cell and the output of a reference cell, thereby electrically changing the apparent threshold value of the verify cell. Data is thereby written into or erased from the array cells earlier than into or from the verify cell. Hence, the verification of the memory cells is accomplished by when the verify cell is verified.

Abstract: A cell portion 10 of a MOS structure and a redundant cell portion 12 of an MNOS structure are formed in a single semiconductor substrate. These MOS and MNOS structures commonly include an oxide film 26. A laminate structure consisting of a silicon nitride film and a pad oxide film and used in the element separation step is included in the redundant cell portion 12. Therefore, the redundant circuit can be naturally formed without increasing the number of process steps, leading to a high yield without inviting an increase in the manufacturing cost.

Abstract: According to the present invention, there is provided a non-volatile semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, wherein the memory cells contain two or more types of memory cells, which differs in gate couple ratio. Each memory cell includes source-drain regions provided apart from each other in a semiconductor substrate having a conductivity type, the source-drain regions having a conductivity type opposite to that of the semiconductor substrate, a floating gate provided above a channel region formed between the source-drain regions, and a control gate provided above a surface of the floating gate, and the memory cells contain two or more types of memory cells, which differ in relation to an area of a region in which the floating gate and the control gate overlap.

Abstract: A field oxide is selectively formed on a silicon substrate. A first gate oxide is formed on the silicon substrate. Formed on the first gate oxide film is a floating gate which is comprised of a stack of a polysilicon film and a silicide layer with different thicknesses at different locations. Oxide spacer are formed on the side portions of the floating gate. A source region and a drain region are formed on the silicon substrate with a channel region disposed therebetween. Silicide layers are respectively formed on the source region and the drain region. The depth of the drain side silicide layer is shallower than the depth of the source side silicide layer. A step is provided on the surface of the floating gate. A control gate is formed on the floating gate via a gate insulator film.

Abstract: A radar module includes a high-frequency signal generator comprising upper and lower parallel conductive plates, at least one dielectric rod held between the parallel conductive plates, a metal diode mount held between the parallel conductive plates, a gunn diode member mounted on a side of the diode mount, and a printed-circuit board mounted on the side of the diode mount in covering relationship to the gunn diode member and having a bias supply circuit on its surface for supplying a bias voltage to the gunn diode member. One terminal of the gunn diode member extends through a through hole defined in the printed-circuit board, is exposed in the vicinity of the surface of the diode mount, and is connected to the bias supply circuit.

Abstract: A phosphorescent phosphor comprising a matrix expressed by M.sub.1-x Al.sub.2 O.sub.4-x (except X=0) in which M is at least one metal element selected from a group consisting of calcium, strontium and barium. X is in a range -0.33.ltoreq..times..ltoreq.0.60 (except x=0). Europium is doped to said matrix as an activator and at least one element selected from a group consisting of lanthanum, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium is doped to said matrix as a co-activator. Magnesium is doped to M.

Abstract: A reference apparatus for determining a current or voltage of a semiconductor device, includes a plurality of reference cells having threshold values different from each other, and a selection circuit for selecting one of the plurality of reference cells. A current flowing in a semiconductor device can be determined by comparing the current flowing in the reference apparatus, with the current flowing in a semiconductor cell by means of a sense amplifier.

Abstract: A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.

Abstract: The first impurity species having a low diffusion rate is heavily doped in a predetermined region of a semiconductor substrate in contact with portions corresponding to the edges of a floating gate, and the second impurity species having a low diffusion rate is lightly doped in the predetermined region from a position separated from the portions corresponding to the edges of the floating gate by a predetermined distance. Annealing is performed such that the second impurity species is diffused below the floating gate more inward than the first impurity species, and part of a diffusion region formed by the first impurity species serves as a tunnel region which overlaps the floating gate. With this structure, a short channel effect can be prevented, and an inter-band current can be suppressed.

Abstract: A metal halide lamp is employed, as a light source, in an optical device such as, for example, an illuminator or an image display. The optical device includes a discharge tube filled with mercury, at least one rare gas, and at least one metal halide, and a pair of electrodes spaced from each other and enclosed in the discharge tube. The optical device also includes an electric circuit, electrically connected to the pair of electrodes, for starting the discharge tube by applying thereto a higher voltage than a voltage to be applied at a steady state to thereby cause an arc discharge in the discharge tube. When the lamp is turned off, power supply thereto from the electric circuit is temporarily interrupted, and when the lamp cools after a first time interval has elapsed subsequent to the interruption of the power supply, a starting voltage is applied to the lamp via the pair of electrodes for a second time interval to cause redischarge.

Abstract: In a metal halide lamp container 1 sealed with mercury and rare gas, GdX.sub.3, LuX.sub.3, and CsX where halogen is iodine, bromine, or their mixture are sealed in a total weight of 1 mg/cc or more, with the weight of CsX defined within a range of 15% or more to 50% or less of the total halides, and the weight ratio of GdX.sub.3 and LuX.sub.3 is set in a range of 0.1.ltoreq.GdX.sub.3 /LuX.sub.3 .ltoreq.10. In addition to GdX.sub.3, LuX.sub.3, and CsX, at least one of thallium halide and dysprosium halide is added. Or DyX.sub.3, LuX.sub.3, NdX.sub.3, and CsX where halogen is iodine, bromine or their mixture are sealed in the specified total weight, with the weight ratio of CsX defined in the above range.

Abstract: A phosphorescent phosphor according to the present invention includes a matrix expressed by MAl.sub.2 O.sub.4 in which M is at least one metal element selected from a group consisting of calcium, strontium and barium. Alternatively, a phosphorescent phosphor according to the present invention includes a matrix expressed by MAl.sub.2 O.sub.4 in which M is plural metal elements which are composed of magnesium and at least one metal element selected from a group consisting of calcium, strontium and barium and europium is added as an activator, further, co-activator is added.

Abstract: A radar module includes a high-frequency signal generator comprising upper and lower parallel conductive plates, at least one dielectric rod held between the parallel conductive plates, a metal diode mount held between the parallel conductive plates, a gunn diode member mounted on a side of the diode mount, and a printed-circuit board mounted on the side of the diode mount in covering relationship to the gunn diode member and having a bias supply circuit on its surface for supplying a bias voltage to the gunn diode member. One terminal of the gunn diode member extends through a through hole defined in the printed-circuit board, is exposed in the vicinity of the surface of the diode mount, and is connected to the bias supply circuit.

Abstract: There is disclosed an improved surimi manufacturing process employing a mince crushing step that increases mince surface area to volume ratios. The effect of increasing surface area to volume ratios of mince particles, depending upon when in the surimi manufacturing process it is used, will improve overall yield of surimi and surimi by-products and/or reduce the requirement for fresh water for the surimi manufacturing process.

Abstract: An information reading method includes the steps of irradiating a phosphor activated by neodymium and ytterbium ions with exciting light of a wavelength between 500 nm and 780 nm that can excite the neodymium ions, and reading the information by receiving the light emitted from the phosphor with a photodetector designed to detect light with wavelengths between 840 m and 1100 nm. Consequently, the information recorded using the phosphor activated by neodymium and ytterbium ions can be read with a high performance without using a filter for cutting the exciting light.