Abstract: The purpose of the present invention is to provide a fiber-reinforced resin material having minimal directionality of strength as well as excellent productivity, a method and device for manufacturing a fiber-reinforced resin material whereby a molded article is obtained, and a device for inspecting a fiber bundle group. A method for manufacturing a sheet-shaped fiber-reinforced resin material in which a paste (P1) is impregnated between cut fiber bundles (CF), the method for manufacturing a fiber-reinforced resin material including a coating step applying a coating of a paste (P1) on a first sheet (S11) conveyed in a predetermined direction, a cutting step for cutting a long fiber bundle (CF) using a cutter (113A), a scattering step for dispersing the cut fiber bundles (CF) and scattering the cut fiber bundles (CF) on the paste (P1), and an impregnation step for pressing a fiber bundle group (F1) and the paste (P1) on the first sheet (S11) and impregnating the paste (P1) between the fiber bundles (CF).

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: The present invention aims at providing an electrode having more sufficient electrode activity and electrical conductivity as a sensor electrode for various gas sensors than conventional sensor electrodes. The present invention relates to a gas sensor electrode including a platinum-containing layer having mixed and dispersed therein a conductive particle phase composed of Pt or a Pt alloy and a ceramic particle phase, and a ceramic layer containing a ceramic material, wherein the platinum-containing layer and the ceramic layer are porous, and the porosity of the ceramic layer as measured by image analysis of a cross-sectional SEM appearance is from 1 to 40% and the average pore size of the ceramic layer is from 0.1 to 5 ?m.

Abstract: The present invention is to provide a metal paste capable of forming electrodes which have sufficient electrode activity and electroconductivity as compared with conventional ones and are useful as the sensor electrodes of various gas sensors. The present invention relates to a metal paste for gas sensor electrode formation formed by dispersing conductive particles including Pt or a Pt alloy and ceramic powder into a solvent and the metal paste further includes inorganic-oxide particles including alumina and insoluble organic particles or carbon or diamond powder, the ceramic powder including a ceramic powder having a particle diameter of 0.5 ?m or larger in an amount of 10-80% by mass based on the whole ceramic powder.

Abstract: To be provided is a metal paste from which an electrode having high electrode activity as a sensor electrode of various gas sensors can be produced. The present invention is a metal paste for forming a gas sensor electrode obtained by dispersing a conductive particle including Pt or a Pt alloy and a ceramic powder including zirconia or stabilized zirconia, or any of zirconia and stabilized zirconia and one or more oxides of La, Ce, Pr, Nd, Sm, and Hf in a solvent, the metal paste further including an inorganic oxide particle containing alumina and an insoluble particle that is insoluble in the solvent, in which 0.5 or more to 3.0 mass % or less of the inorganic oxide particle and 1.0 to 5.0 mass % of the insoluble particle are dispersed based on the mass of the solid content of the conductive particle, the ceramic powder, the inorganic oxide particle, and the insoluble particle.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: To be provided is a metal paste from which an electrode having high electrode activity as a sensor electrode of various gas sensors can be produced. The present invention is a metal paste for forming a gas sensor electrode obtained by dispersing a conductive particle including Pt or a Pt alloy and a ceramic powder including zirconia or stabilized zirconia, or any of zirconia and stabilized zirconia and one or more oxides of La, Ce, Pr, Nd, Sm, and Hf in a solvent, the metal paste further including an inorganic oxide particle containing alumina and an insoluble particle that is insoluble in the solvent, in which 0.5 or more to 3.0 mass % or less of the inorganic oxide particle and 1.0 to 5.0 mass % of the insoluble particle are dispersed based on the mass of the solid content of the conductive particle, the ceramic powder, the inorganic oxide particle, and the insoluble particle.

Abstract: To be provided is a metal paste from which an electrode having high electrode activity as a sensor electrode of various gas sensors can be produced. The present invention is a metal paste for forming a gas sensor electrode obtained by dispersing a conductive particle including Pt or a Pt alloy and a ceramic powder including zirconia or stabilized zirconia, or any of zirconia and stabilized zirconia and one or more oxides of La, Ce, Pr, Nd, Sm, and Hf in a solvent, the metal paste further including an inorganic oxide particle containing alumina and an insoluble particle that is insoluble in the solvent, in which 0.5 or more to 3.0 mass % or less of the inorganic oxide particle and 1.0 to 5.0 mass % of the insoluble particle are dispersed based on the mass of the solid content of the conductive particle, the ceramic powder, the inorganic oxide particle, and the insoluble particle.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: A method includes: allocating a first divided region in a user space to a program executed in a user mode, the first divided region being one of a plurality of divided regions obtained by dividing a storing region of a memory, storing information which indicates that the data to be stored is confidential, in association with the first divided region allocated to the program; storing, when data stored in the first divided region is copied to a second divided region in a kernel space among the plurality of divided regions of the storing region and when the information is associated with the first divided region, the information in association with the second divided region; and dumping, when the second divided region with which the information is associated is included in a dump target, encryption data which is obtained by encrypting the data stored in the second divided region.

Abstract: To be provided is a metal paste from which an electrode having high electrode activity as a sensor electrode of various gas sensors can be produced. The present invention is a metal paste for forming a gas sensor electrode obtained by dispersing a conductive particle including Pt or a Pt alloy and a ceramic powder including zirconia or stabilized zirconia, or any of zirconia and stabilized zirconia and one or more oxides of La, Ce, Pr, Nd, Sm, and Hf in a solvent, the metal paste further including an inorganic oxide particle containing alumina and an insoluble particle that is insoluble in the solvent, in which 0.5 or more to 3.0 mass % or less of the inorganic oxide particle and 1.0 to 5.0 mass % of the insoluble particle are dispersed based on the mass of the solid content of the conductive particle, the ceramic powder, the inorganic oxide particle, and the insoluble particle.

Abstract: A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 ?m, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.

Abstract: Disclosed is a method of manufacturing a silicon thin film, a method of manufacturing a silicon thin-film photovoltaic cell, and a silicon thin film. There is provided a method of manufacturing a silicon thin film in a form in which an inert face formed by an exposed face of a silicon substrate and an inert layer is formed by selectively forming the inert layer on the silicon substrate in which growth of a silicon crystal is inactive for a raw material gas of the silicon crystal, and the silicon crystal is grown from the exposed face such that the silicon crystal covers the silicon substrate by supplying a raw material gas, of which a surface decomposition reaction on the silicon substrate is dominant, out of the raw material gas to the silicon substrate. By forming a width of the exposed face in a range of 0.001 ?m to 1 ?m, the silicon thin film is formed in a state that the silicon thin film can be peeled off from the silicon substrate.

Abstract: A flame detector is provided. A circuit board is disposed in a housing. A first light source emits first light. A light guide member comprised of translucent material guides the first light from the first light source to a light emission portion of the light guide member. A first light receiving element detects second light having a predetermined wavelength unique to the flames. A second light source emits third light to a translucent cover which is disposed between an opening of the housing and the first light receiving element. A second light receiving element detects the third light passed through the translucent cover to test the translucency. The first light source, the second light source and the second light receiving element are mounted on the circuit board. The light emission portion is formed into a substantially annular shape which encloses the first light receiving element at a front side of the housing to limit a field of view of the first light receiving element to a predetermined range.

Abstract: A flame detector is provided. A circuit board is disposed in a housing. A first light source emits first light. A light guide member comprised of translucent material guides the first light from the first light source to a light emission portion of the light guide member. A first light receiving element detects second light having a predetermined wavelength unique to the flames. A second light source emits third light to a translucent cover which is disposed between an opening of the housing and the first light receiving element. A second light receiving element detects the third light passed through the translucent cover to test the translucency. The first light source, the second light source and the second light receiving element are mounted on the circuit board. The light emission portion is formed into a substantially annular shape which encloses the first light receiving element at a front side of the housing to limit a field of view of the first light receiving element to a predetermined range.

Abstract: An ionization smoke detector comprising: an inner electrode; an intermediate electrode having an electrode body and an electrode piece extending from the electrode body, facing the inner electrode and connected to a field effect transistor; an outer electrode provided in an opposite side to the inner electrode with respect to the intermediate electrode; and an insulating supporter for supporting the intermediate electrodes to face the inner electrode.

Abstract: A method of making semiconductor wafers can prevent processing strain on peripheral portions of wafers caused by non-wax polishing using a template. This involves mirror chamfering or etching the peripheral portions of the wafers after the non-wax polishing step.