Abstract: A semiconductor device includes a first semiconductor layer, a first insulation layer, and a first electrode. The first electrode includes a titanium layer and a titanium nitride layer. The first insulation layer is provided on the first semiconductor layer. The first insulation layer contains silicon nitride. The titanium nitride layer is provided on the first insulation layer. The titanium layer is provided on at least a portion of the titanium nitride layer.

Abstract: A soldering apparatus including a vessel containing a molten solder, a casing defining therewithin a soldering chamber in which a flat overflowing wave of the molten solder is formed, a conveyor physically integrated with the casing for movement therewith and operable for transferring a printed circuit board through the soldering chamber, actuators and for vertically moving the casing, inert gas feeders for feeding an inert gas to the soldering chamber, and a controller for controlling the operation of the actuators and, so that the printed circuit board is contacted with the surface of the flat overflowing wave in an atmosphere of the inert gas during its passage through the soldering chamber.

Abstract: A soldering apparatus including a vessel containing a molten solder, a casing defining therewithin a soldering chamber in which a flat overflowing wave of the molten solder is formed, a conveyor physically integrated with the casing for movement therewith and operable for transferring a printed circuit board through the soldering chamber, actuators and for vertically moving the casing, inert gas feeders for feeding an inert gas to the soldering chamber, and a controller for controlling the operation of the actuators and, so that the printed circuit board is contacted with the surface of the flat overflowing wave in an atmosphere of the inert gas during its passage through the soldering chamber.

Abstract: Spacers and a grid unit are provided between a first substrate having a phosphor screen formed thereon and a second substrate provided with a plurality of electron emission sources. The grid unit includes a plate-shaped grid which has a plurality of electron beam apertures opposed to the electron emission sources, individually, and is located opposite the second substrate and to which a predetermined voltage is applied, and a first dielectric layer which covers an outer surface of the grid. The grid unit includes a conductive layer, which is provided between the first dielectric layer and the second substrate and connected to a ground potential, and a second dielectric layer formed covering the conductive layer and situated between the conductive layer and the second substrate.

Abstract: An image display device includes an envelope having a first substrate and a second substrate opposed to the first substrate with a gap, and a plurality of pixels arranged in the envelope. A plurality of spacers are arranged between the first substrate and the second substrate in the envelope to support atmospheric pressure acting on the,first and second substrates. Convexes and concaves having Ra of 0.2 to 0.6 ?m and Sm of 0.02 to 0.3 mm are formed on the surfaces of the spacers.

Abstract: A first substrate having an image display screen formed thereon is located opposite a second substrate provided with a plurality of electron emitting sources. A plurality of spacers are provided between the first substrate and the second substrate, and support an atmospheric load which acts on the first and second substrates. Each of the spacers is formed of at least two types of materials with different softening temperatures, and end portions which abut against at least one of the first substrate and the second substrate are formed of a material with a high softening temperature.