Abstract: There is provided an impedance sensor capable of counting the number of microscopic biological materials and specifying their properties stably with high sensitivity. An impedance sensor includes a measuring electrode pair formed at a wiring layer in a multilayer-wiring circuit board and one or more dielectrophoresis electrodes formed at another wiring layer lower than the wiring layer.

Abstract: [Object] To achieve a radiation detector capable of suppressing variation in the amount of radiation detected. [Solution] A first gate electrode (52) is connected to a light receiving device, and a second gate electrode (53) is configured to have the same potential as that of the first gate electrode (52).

Abstract: An integrated circuit sensor that enables, regardless of a type of an inspection object, the inspection object and a front surface of the integrated circuit sensor to be in reliable contact with each other in a large region is provided. A through silicon via (11) that electrically connects an inside of an integrated circuit sensor (4) and an outside of the integrated circuit sensor (4) is formed in the inside of the integrated circuit sensor (4) so as to reach a rear surface of the integrated circuit sensor (4), which faces the front surface of the integrated circuit sensor (4).

Abstract: [Object] To achieve a high-sensitivity radiation detector. [Solution] An amplifying transistor (3) is configured such that a photodiode (1) receives light with the amplifying transistor (3) conductive.

Abstract: An imaging system includes an input voltage setting unit that applies an input voltage to an Amp transistor, a setting output value acquisition unit that acquires a corresponding output for each pixel, and a calibration characteristic deriving unit that derives an input-output characteristic indicating a correspondence relationship between the input voltage and the output and derives a calibration characteristic to be used for calibration based on an inverse characteristic of the input-output characteristic.

Abstract: A change in an imaginary part of a complex dielectric constant of an inspection object containing moisture is detected as a change in an oscillation frequency. A sensor device includes an oscillation unit that is formed in a semiconductor integrated circuit and an oscillation frequency detection unit that detects an oscillation frequency of the oscillation unit. The oscillation unit has capacitors that are connected to an inspection object in series and changes the oscillation frequency in accordance with a complex dielectric constant of the inspection object.

Abstract: [Object] To reduce 1/f noise by utilizing the functionality of controlling row selection, with which a typical solid-state imaging element is provided. [Solution] A solid-state imaging element (1A) includes a pixel array (A) in which a plurality of columns of pixels (P) are arranged, a row selection unit (13) that specifies a readout row of the pixel array (A), and a control device (30) that sweeps information carried by each pixel (P) a plurality of times by controlling the row selection unit (13) and outputs an output value in accordance with results of a plurality of readouts of the information obtained from each pixel (P) by the sweeping.

Abstract: There is provided an impedance sensor capable of counting the number of microscopic biological materials and specifying their properties stably with high sensitivity. An impedance sensor includes a measuring electrode pair formed at a wiring layer in a multilayer-wiring circuit board and one or more dielectrophoresis electrodes formed at another wiring layer lower than the wiring layer.

Abstract: Provided is a technology for detecting a change in an inspection target containing moisture. A sensor circuit (1) for inspecting property of an inspection target includes an oscillator (20) having a resonance frequency of 30 to 200 GHz, and a detection circuit (3) that estimates an oscillation frequency of the oscillator.

Abstract: To detect changes in the physical properties of an examination object as changes in a plurality of different oscillation frequencies using signals with the oscillation frequencies, a sensor circuit includes: an oscillation circuit (1) with a first resonant frequency; an oscillation circuit (2) with a second resonant frequency different from the first resonant frequency; and a detection circuit (4) that detects oscillation frequencies of the oscillation circuit (1) and the oscillation circuit (2).

Abstract: [Object] To realize an image capturing apparatus capable of suppressing noise in an image. [Solution] An image capturing apparatus (100) includes a plurality of pixels (110) arranged in a matrix form. Each pixel includes a switching element (112) configured to control outputting of a charge accumulated in a sensor element (111). Pixels in each column are grouped into blocks (120). Each block includes a block switching element (122) configured to control outputting.

Abstract: [Object] To achieve a radiation detector capable of suppressing variation in the amount of radiation detected. [Solution] A first gate electrode (52) is connected to a light receiving device, and a second gate electrode (53) is configured to have the same potential as that of the first gate electrode (52).

Abstract: [Object] To achieve a high-sensitivity radiation detector. [Solution] An amplifying transistor (3) is configured such that a photodiode (1) receives light with the amplifying transistor (3) conductive.

Abstract: An imaging system includes an input voltage setting unit that applies an input voltage to an Amp transistor, a setting output value acquisition unit that acquires a corresponding output for each pixel, and a calibration characteristic deriving unit that derives an input-output characteristic indicating a correspondence relationship between the input voltage and the output and derives a calibration characteristic to be used for calibration based on an inverse characteristic of the input-output characteristic.

Abstract: A change in an imaginary part of a complex dielectric constant of an inspection object containing moisture is detected as a change in an oscillation frequency. A sensor device includes an oscillation unit that is formed in a semiconductor integrated circuit and an oscillation frequency detection unit that detects an oscillation frequency of the oscillation unit. The oscillation unit has capacitors that are connected to an inspection object in series and changes the oscillation frequency in accordance with a complex dielectric constant of the inspection object.

Abstract: Provided is a technology for detecting a change in an inspection target containing moisture. A sensor circuit (1) for inspecting property of an inspection target includes an oscillator (20) having a resonance frequency of 30 to 200 GHz, and a detection circuit (3) that estimates an oscillation frequency of the oscillator.

Abstract: To detect changes in the physical properties of an examination object as changes in a plurality of different oscillation frequencies using signals with the oscillation frequencies, a sensor circuit includes: an oscillation circuit (1) with a first resonant frequency; an oscillation circuit (2) with a second resonant frequency different from the first resonant frequency; and a detection circuit (4) that detects oscillation frequencies of the oscillation circuit (1) and the oscillation circuit (2).

Abstract: An integrated circuit sensor that enables, regardless of a type of an inspection object, the inspection object and a front surface of the integrated circuit sensor to be in reliable contact with each other in a large region is provided. A through silicon via (11) that electrically connects an inside of an integrated circuit sensor (4) and an outside of the integrated circuit sensor (4) is formed in the inside of the integrated circuit sensor (4) so as to reach a rear surface of the integrated circuit sensor (4), which faces the front surface of the integrated circuit sensor (4).

Abstract: The 90-degree phase shifter of the invention has: a T flip-flop including transistors Q3 to Q6 and Q9 to Q12 that together constitute a dual differential circuit, input transistors Q1 and Q2 that receive at their bases an input signal, and input transistors Q7 and Q8 that receive at their bases a signal complementary to the input signal; variable current sources 14 to 17 connected respectively to the nodes between the individual input transistors and the dual differential circuit; and a 90-degree phase comparator 10 that compares the phase differences between the signals outputted from the T flip-flop to output signals commensurate with the deviations of those phase differences from 90 degrees. The variable current sources 14 to 17 are controlled by signals based on the signals outputted from the 90-degree phase comparator 10. This configuration more surely yields output signals with a phase difference of exactly 90 degrees.

Abstract: According to an embodiment of a circuit substrate of the present invention, in a circuit substrate provided with a plurality of circuit blocks formed on a single substrate, at least one of the metal patterns connecting the circuit blocks is separated into two sections at some midpoint of wiring, and exposed conductor portions whose end portions are to be bridge-connected through soldering are provided at the end portions in the separated portion of the separated two wiring metal patterns.