Abstract: A recording medium comprising on a base material an ink-receiving layer containing an alumina hydrate, said ink-receiving layer being formed by applying a coating liquid containing said alumina hydrate to said base material followed by drying to form a layer to be said ink-receiving layer, swelling said layer to be said ink-receiving layer again, and pressing the swollen layer to a heated mirror-finish drum for drying, the glossiness of the surface of the recording medium on the side of the ink-receiving layer as measured at 20° being 20% or more.

Abstract: This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (WC) at an opening center of the stripe-shaped opening is different from either or both of a width (WF) of the opening front end and a width (WR) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

Abstract: Provided is a recording medium provided with an ink-receiving layer on at least one surface of a substrate, wherein said ink-receiving layer is composed of a porous layer comprising pigment particles and mutually fused thermoplastic resin particles.

Abstract: In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Abstract: A recording medium comprises a porous outermost layer on a substrate, the porous outermost layer containing a particulate thermoplastic resin, and the particulate thermoplastic resin exhibiting a &Dgr;E value of not higher than 20 after light exposure. The difference of glass transition temperature of the particulate thermoplastic resin from minimum film-forming temperature thereof may be not less than 10° C., and the minimum film-forming temperature is not lower than 50° C. A process for producing the recording medium comprises forming a porous outermost layer by heat treatment at a temperature of not lower than the glass transition temperature of the particulate thermoplastic resin, but not higher than the minimum film-forming temperature thereof.

Abstract: Provided is a fine powder material for forming an ink-receiving layer on a recording medium, wherein a pore radius maximum exists within a range of from 90 to 120 Å in a pore radius distribution of said fine powder material and wherein a total volume of pores having radii not exceeding 50 Å is not more than 6.0% of a volume of all pores.

Abstract: In a system in which a computer terminal of a doctor, capable of entering audio data and an image and of data printing, is capable of communicating with a server managed by a third person and having a large-capacity memory apparatus, dialog data, containing an image and audio data in a dialog between the doctor and a patient, are transmitted from the computer terminal of the doctor to the server for storage in the large-capacity memory apparatus, then the audio data in the dialog data are recognized and converted into text data, clinical report data are generated from the text data, and the clinical report data are printed by the computer terminal of the doctor to generate a clinical report. The clinical report is shown to the patient and is given an approving signature, which is stored in correlation with the dialog data.

Abstract: In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Abstract: In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

Abstract: There is provided a recording medium comprising a substrate and an ink-receiving layer containing alumina hydrate formed thereon, wherein the alumina hydrate is present unoriented in the ink-receiving layer and a diffraction intensity fluctuation &dgr; in a diffraction pattern is not more than 5%, when irradiating an electron beam to a cross section of the ink-receiving layer.

Abstract: Disclosed herein is a recording medium comprising a base material and a porous surface layer containing particles of a thermoplastic resin, wherein the breadth of the particle size distribution of the particles of the thermoplastic resin is within 3.sigma., and the proportion of particles having a particle size at most a fifth of the average particle size of the particles of the thermoplastic resin is 10% or lower.

Abstract: The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.

Abstract: The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

Abstract: The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, anda buried layer for current blocking disposed at both sides in the cavity direction of the active layer,at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations.

Abstract: The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5<w.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.III As, wherein B.sup.III represents a Group III element with Al composition of not less than 0.45, formed on the A.sub.1.sup.III As.sub.w P.sub.1-w film, and a thin film of C.sub.1.sup.III As.sub.x P.sub.1-x, wherein C.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.ltoreq.x 0.5, formed on the B.sup.III As film; or (2) a thin film of A.sub.2.sup.III As.sub.u P.sub.1-u, wherein A.sub.2.sup.III represents a Group III element with In composition of not less than 0.3, 0.ltoreq.u.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.

Abstract: The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.

Abstract: A process for producing a magnetic recording medium includes coating a nonmagnetic substrate with a magnetic paint and applying a rotating magnetic field for orientation to the raw fabric with magnetic paint in a yet unsolidified state on the substrate, in which a magnetic field is applied to the above raw fabric so that the magnetic lines of force may pass from the back face to the front surface or from the front surface to the back surface of the raw fabric before application of the rotating magnetic field for orientation, thereby effecting preliminary orientation.

Abstract: A process for preparing a magnetic recording medium by coating a magnetic coating material on a non-magnetic support and then drying the above magnetic coating material, which comprises imparting a magnetic field to said magnetic coating material with a magnet which rotates with the rotational surface at an angle of 5.degree. to 30.degree. relative to the surface of said support prior to drying of said magnetic coating material on said support.