Abstract: A sensor includes a complex-transfer-function calculator that calculates a complex transfer function from received signals, a reflection-coefficient calculator that calculates a reflection coefficient using a complex transfer function when an object to be detected is arranged at one of L positions and an ideal complex transfer function which is a theoretical value for the position at which the object to be detected is arranged, various normalizers that calculate a normalized reflection coefficient by normalizing the reflection coefficient, a reflection-coefficient interpolator that calculates an interpolated reflection coefficient by interpolation calculation of the reflection coefficient using the normalized reflection coefficient for each coordinates used in position estimation of the object to be detected, and a position estimator that corrects the position estimation, using a steering vector and the interpolated reflection coefficient that are determined based on the position of each of the transmitting a

Abstract: Provided is a heterocyclic compound that can have an antagonistic action on an NMD A receptor containing the NR2B subunit and that is expected to be useful as a prophylactic or therapeutic agent for depression, bipolar disorder, migraine, pain, peripheral symptoms of dementia and the like. A compound represented by the formula (I), wherein each symbol is as defined in the DESCRIPTION, or a salt thereof.

Abstract: Preventing blood flow artifacts from being increased in an imaging plane allows reduction of the blood flow artifacts in the cross section subsequently excited. In the imaging using a spin-echo (SE) pulse sequence, an excitation width of a 90° pulse is extended from an imaging plane to one side. This one side indicates a downstream side of the blood flow with respect to a vessel of interest. In imaging multiple slices, the order of measuring the multiple imaging slices is set along the direction in which the width is extended.

Abstract: A board shield (52) covers a region in which an electronic part is mounted on a lower surface of a circuit board (50). A memory housing chamber (R1) capable of housing a semiconductor memory is secured on the lower side of the circuit board. The board shield (52) includes a shield wall (52e) along the memory housing chamber (R1). With this, it is possible to protect the semiconductor memory while suppressing an increase in the number of parts.

Abstract: A leakage of electromagnetic waves is suppressed effectively on the periphery of a heat radiating device. A heat radiating device (80) includes a plurality of fins (81) that are arranged on the inside of an opening (52a), a heat pipe (83) that includes a connecting portion (83a) being located between the plurality of fins (81) and a circuit board (50) and extending in a left-right direction along the circuit board (50), and a base plate (82) that supports the plurality of fins (81). The base plate (82) includes a plate left portion (82c). The plate left portion (82c) covers a lower surface of the heat pipe (83), the lower surface facing a side of a board shield (52), and closes a gap (G1) between a left end of the plurality of fins (81) and a left edge of the opening (52a) of the board shield (52).

Abstract: A mounting structure has: a first member in which a first through-hole is formed; a second member in which a second through-hole is formed; and a clip having a first shaft portion, a first anchor portion that is anchored on an edge portion of the first through-hole, a second shaft portion whose axial center is eccentric with respect to an axial center of the first shaft portion, and a second anchor portion that is anchored on an edge portion of the second through-hole, wherein a cross-sectional shape of a portion, which is disposed at an inner side of the first-through hole, of the first shaft portion is a polygonal shape, and a length along a longest diagonal line of the polygonal shape, or a length of a longest side of the polygonal shape, is longer than a minimum opening length of the first through-hole.

Abstract: An electrochromic device having excellent repetitive characteristics is realized. An electrochromic device includes a first transparent electrode arranged on a first substrate, a second transparent electrode arranged on a second substrate, and a nanocrystal layer arranged on the first transparent electrode. An electrolyte is interposed between the nanocrystal layer and the second transparent electrode. The first transparent electrode, the second transparent electrode, and the nanocrystal layer do not cause an oxidation-reduction reaction when a voltage is applied to modulate a transmission spectrum, and do not include an electrode that causes modulation of a transmission spectrum by an oxidation-reduction reaction when a voltage is applied.

Abstract: A light adjustment system is, for example, a light adjustment window (1) including: a windowpane (11); a light adjustment device (40); a drive device (50); and a frame (20) having an incorporating (24) into which the windowpane (11) and the drive device (50) are incorporated. A part of the frame (20) includes: a containing section (26) that contains at least a part of the drive device (50); and an opening and closing section (27) that openably and closably covers the containing section (26).

Abstract: A mounting structure has: a first member in which a first through-hole is formed; a second member in which a second through-hole is formed; and a clip having a first shaft portion, a first anchor portion that is anchored on an edge portion of the first through-hole, a second shaft portion whose axial center is eccentric with respect to an axial center of the first shaft portion, and a second anchor portion that is anchored on an edge portion of the second through-hole, wherein a cross-sectional shape of a portion, which is disposed at an inner side of the first-through hole, of the first shaft portion is a polygonal shape, and a length along a longest diagonal line of the polygonal shape, or a length of a longest side of the polygonal shape, is longer than a minimum opening length of the first through-hole.

Abstract: A transmittance of light is adjusted by more various operation modes compared to the related art. In a dimming device, in a case where an AC voltage having a first frequency and an amplitude equal to or greater than a first amplitude is applied, the transmittance of light in the first wavelength range is higher than that in a case where a flake is oriented in a direction shielding the light, and in a case where an AC voltage having a second frequency and an amplitude equal to or greater than a second amplitude is applied, the transmittance of light in the second wavelength range is higher than that in a case where a flake is oriented in a direction shielding the light. Here, the second amplitude is equal to or greater than the first amplitude.

Abstract: An electrochromic device having excellent repetitive characteristics is realized. An electrochromic device includes a first transparent electrode arranged on a first substrate, a second transparent electrode arranged on a second substrate, and a nanocrystal layer arranged on the first transparent electrode. An electrolyte is interposed between the nanocrystal layer and the second transparent electrode. The first transparent electrode, the second transparent electrode, and the nanocrystal layer do not cause an oxidation-reduction reaction when a voltage is applied to modulate a transmission spectrum, and do not include an electrode that causes modulation of a transmission spectrum by an oxidation-reduction reaction when a voltage is applied.

Abstract: A system includes a primary Printed Circuit Board (PCB) and a heat transfer device that is attached to the primary PCB. The primary PCB includes a heat generating device and a thermal conductive inlay attached to the heat generating device. The heat transfer device includes a secondary PCB that is thermally coupled to the primary PCB, and a heat dissipation block. The heat dissipation block has a first side attached to the thermal conductive inlay of the primary PCB and a second side attached to the secondary PCB.

Abstract: Provided is a light reflective material that enables stable switching between light transmission and light reflection when used in a light control device. A light reflective material includes a base, a conducting film that is stacked on the surface of the base, and an insulating film that is stacked on the surface of the conducting film. A first region where the conducting film is not formed is present in a layer where the conducting film lies. A second region where the insulating film is not formed is present in a layer where the insulating film lies. The first region and the second region at least partially overlap each other.

Abstract: A system includes a primary Printed Circuit Board (PCB) and a heat transfer device that is attached to the primary PCB. The primary PCB includes a heat generating device and a thermal conductive inlay attached to the heat generating device. The heat transfer device includes a secondary PCB that is thermally coupled to the primary PCB, and a heat dissipation block. The heat dissipation block has a first side attached to the thermal conductive inlay of the primary PCB and a second side attached to the secondary PCB.

Abstract: A light adjustment system is, for example, a light adjustment window (1) including: a windowpane (11); a light adjustment device (40); a drive device (50); and a frame (20) having an incorporating (24) into which the windowpane (11) and the drive device (50) are incorporated. A part of the frame (20) includes: a containing section (26) that contains at least a part of the drive device (50); and an opening and closing section (27) that openably and closably covers the containing section (26).

Abstract: A robotic system may include an incremental encoder coupled to a joint of the system. The robotic system may include a memory configured to store representations of angular positions of the joint. The robotic system may include a motor coupled to the joint, where rotation of the joint while the motor is powered off (i) causes rotation of the motor such that electric power is generated, and (ii) updates the angular position of the joint. The robotic system may use the electric power to power on the incremental encoder and the memory while the robotic system is powered off. One or more processors may obtain, when the robotic system powers on after being powered off, the updated angular position of the joint from the memory, where the incremental encoder provides the updated angular position to the memory while the robotic system is powered off.

Abstract: A nitride compound semiconductor has a substrate and a nitride compound semiconductor stack on the substrate. The nitride compound semiconductor stack includes a multilayer buffer layer, a channel layer on this multilayer buffer layer, and an electron supply layer on this channel layer. A recess extends from the surface of the electron supply layer through the channel layer and the multilayer buffer layer. A heat dissipation layer in this recess is contiguous to the multilayer buffer layer and the channel layer and has a higher thermal conductivity than the multilayer buffer layer.

Abstract: A method for producing a nitride semiconductor stacked body includes: a first nitride semiconductor layer forming step of forming a first nitride semiconductor layer above a substrate within a reaction furnace; a second nitride semiconductor layer forming step of forming a second nitride semiconductor layer above the first nitride semiconductor layer; and a third nitride semiconductor layer forming step of forming a third nitride semiconductor layer on the upper surface of the second nitride semiconductor layer, the third nitride semiconductor layer having a band gap larger than the band gap of the second nitride semiconductor layer. No interval is provided between the second nitride semiconductor layer forming step and the third nitride semiconductor layer forming step, and the third nitride semiconductor layer forming step is performed continuously after the second nitride semiconductor layer forming step.

Abstract: In a nitride semiconductor including a Si substrate and a nitride semiconductor stacked body disposed on the Si substrate, the half value width of an X-ray diffraction rocking curve of the Si substrate is less than 160 arcsec.

Abstract: According to this GaN-based HFET, resistivity ? of a semi-insulating film forming a gate insulating film is 3.9×109?cm. The value of this resistivity ? is a value derived when the current density is 6.25×10?4 (A/cm2). By inclusion of the gate insulating film by a semi-insulating film having a resistivity ?=3.9×109?cm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1 ×1011?cm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1 ×107?cm.