Abstract: A hot-pressed steel sheet member has a composition containing, by mass, C: 0.09% to 0.38%, Si: 0.05% to 2.0%, Mn: 0.5% to 3.0%, P: 0.05% or less, S: 0.05% or less, Al: 0.005% to 0.1%, N: 0.01% or less, Sb: 0.002% to 0.03%, and the balance being Fe and inevitable impurities, and having a tensile strength TS of 980 to 2,130 MPa.

Abstract: A hot-pressed steel sheet member has a composition containing, by mass, C: 0.09% to 0.38%, Si: 0.05% to 2.0%, Mn: 0.5% to 3.0%, P: 0.05% or less, S: 0.05% or less, Al: 0.005% to 0.1%, N: 0.01% or less, Sb: 0.002% to 0.03%, and the balance being Fe and inevitable impurities, and having a tensile strength TS of 980 to 2,130 MPa.

Abstract: A hot-rolled steel strip having superior low temperature toughness and weldability, which is suitably used as a starting material for high strength electric resistance welding pipe, is provided at a low cost without constructing new production facilities and increasing cost. The hot-rolled steel strip is low carbon steel containing at least one of about 0.5.% or less of Cu, about 0.5% or less of Ni, and about 0.5% or less of Mo, wherein Pcm represented by the following equation (1) is 0.17 or less: Pcm=(% C)+(% Si)/30+((% Mn)+(% Cu))/20+(% Ni)/60+(% Mo)/7+(% V)/10??Equation (1), (where (% M) indicates the content of element M on a mass percent basis), and the balance includes Fe and incidental impurities. In addition, in the entire microstructure, the ratio of bainitic ferrite, which is a primary phase, is controlled to be about 95 percent by volume or more.

Abstract: A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

Abstract: A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

Abstract: A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

Abstract: A semiconductor device includes at least one semiconductor structure which has a plurality of external connection electrodes formed on a semiconductor substrate. An insulating sheet member is arranged on the side of the semiconductor structure. Upper interconnections have connection pad portions that are arranged on the insulating sheet member in correspondence with the upper interconnections and connected to the external connection electrodes of the semiconductor structure.

Abstract: A hot-rolled steel strip having superior low temperature toughness and weldability, which is suitably used as a starting material for high strength electric resistance welding pipe, is provided at a low cost without constructing new production facilities and increasing cost. The hot-rolled steel strip is low carbon steel containing at least one of about 0.5.% or less of Cu, about 0.5% or less of Ni, and about 0.5% or less of Mo, wherein Pcm represented by the following equation (1) is 0.