Patents by Inventor Nobuyuki Katoh

Nobuyuki Katoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961828
    Abstract: A semiconductor device includes a heat dissipation member, multiple switching elements, and multiple signal terminals. The switching elements include a first switching element formed on a silicon substrate and a second switching element formed on a silicon carbide substrate, and include at least one of the first switching element or the second switching element in a plural number Each of the switching elements includes a temperature sense pad. The first switching element and the second switching element are alternately arranged in a predetermined direction in which a refrigerant flows. In the switching elements of same type as the switching element disposed on a most downstream side in the predetermined direction, the signal terminal corresponding to the temperature sense pad is provided for the switching element disposed on the most downstream side, and is not provided for the switching elements disposed on more upstream side.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: April 16, 2024
    Assignee: DENSO CORPORATION
    Inventor: Nobuyuki Katoh
  • Patent number: 11495509
    Abstract: In a semiconductor device, a semiconductor element includes a semiconductor substrate, a surface electrode and a protective film. The semiconductor substrate has an active region and an outer peripheral region. The surface electrode includes a base electrode disposed on a front surface of the semiconductor substrate and a connection electrode disposed on the base electrode. The protective film covers a peripheral end portion of the base electrode and an outer peripheral edge of the connection electrode. The protective film has an opening to expose the connection electrode so as to enable a solder connection. A boundary between the outer peripheral edge of the connection electrode and the protective film is located at a position corresponding to the outer peripheral region in a plan view.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: November 8, 2022
    Assignee: DENSO CORPORATION
    Inventor: Nobuyuki Katoh
  • Publication number: 20220020730
    Abstract: A semiconductor device includes a heat dissipation member, multiple switching elements, and multiple signal terminals. The switching elements include a first switching element formed on a silicon substrate and a second switching element formed on a silicon carbide substrate, and include at least one of the first switching element or the second switching element in a plural number Each of the switching elements includes a temperature sense pad. The first switching element and the second switching element are alternately arranged in a predetermined direction in which a refrigerant flows. In the switching elements of same type as the switching element disposed on a most downstream side in the predetermined direction, the signal terminal corresponding to the temperature sense pad is provided for the switching element disposed on the most downstream side, and is not provided for the switching elements disposed on more upstream side.
    Type: Application
    Filed: September 30, 2021
    Publication date: January 20, 2022
    Inventor: Nobuyuki KATOH
  • Publication number: 20210358826
    Abstract: In a semiconductor device, a semiconductor element includes a semiconductor substrate, a surface electrode and a protective film. The semiconductor substrate has an active region and an outer peripheral region. The surface electrode includes a base electrode disposed on a front surface of the semiconductor substrate and a connection electrode disposed on the base electrode. The protective film covers a peripheral end portion of the base electrode and an outer peripheral edge of the connection electrode. The protective film has an opening to expose the connection electrode so as to enable a solder connection. A boundary between the outer peripheral edge of the connection electrode and the protective film is located at a position corresponding to the outer peripheral region in a plan view.
    Type: Application
    Filed: April 30, 2021
    Publication date: November 18, 2021
    Inventor: NOBUYUKI KATOH
  • Patent number: 6743293
    Abstract: A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: June 1, 2004
    Assignee: Shusaku Kabushiki Kaiksha
    Inventor: Nobuyuki Katoh
  • Publication number: 20020083886
    Abstract: A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.
    Type: Application
    Filed: November 27, 2001
    Publication date: July 4, 2002
    Inventor: Nobuyuki Katoh
  • Patent number: 5837463
    Abstract: An objective of this invention is to clarify the sequence of the 3'-end site of HCV genome and to provide a new process for detecting HCV.A new sequence with a highly conserved 3'-end site of the HCV genome has been found. Using the said sequences, new process for detecting HCV, a process for inhibiting proliferation of HCV, etc. have been provided.
    Type: Grant
    Filed: October 11, 1996
    Date of Patent: November 17, 1998
    Assignees: Rational Drug Design Laboratories, National Cancer Center
    Inventors: Torahiko Tanaka, Nobuyuki Katoh, Kunitada Shimotohno