Patents by Inventor Nobuyuki Kometani

Nobuyuki Kometani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing insulated gate field effect transistor
    Patent number: 5306654
    Abstract: An insulated gate field effect transistor having a stable threshold voltage controlled with a good accuracy and a method for manufacturing the same is disclosed. The method for manufacturing a field effect transistor is such that doping a gate electrode with a P-type dopant is carried out after introducing an N-type dopant to a base layer for forming a contact region. The field effect transistor has sources having an extended portion extending into an upper portion of the contact region.
    Type: Grant
    Filed: January 21, 1993
    Date of Patent: April 26, 1994
    Assignee: NEC Corporation
    Inventor: Nobuyuki Kometani