Abstract: According to the present invention, a process for producing an epoxy compound, where an epoxy compound can be selectively produced from olefins with good yield at low cost in a safe manner by a simple operation under mild conditions without using a quaternary ammonium salt or a metal compound, is provided. The present invention relates to a process for producing an epoxy compound, comprising epoxidizing a carbon-carbon double bond of an organic compound having a carbon-carbon double bond by using hydrogen peroxide as an oxidant, wherein the epoxidation is carried by out using an organic nitrile compound and an organic amine compound.

Abstract: According to the present, invention, a process for producing an epoxy compound, where an epoxy compound can be selectively produced from olefins with good yield at low cost in a safe manner by a simple operation under mild conditions without using a quaternary ammonium salt or a metal compound, is provided. The present invention relates to a process for producing an epoxy compound, comprising epoxidizing a carbon-carbon double bond of an organic compound having a carbon-carbon double bond by using hydrogen peroxide as an oxidant, wherein the epoxidation is carried by out using an organic nitrile compound and an organic amine compound.

Abstract: A niobium powder for capacitors, which contains niobium monoxide crystal or hexaniobium monoxide crystal; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material.

Abstract: A niobium powder for capacitors, having an average particle size of from 10 to 500 ?m, which is a granulated powder having an oxygen content of 3 to 9% by mass; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material. A capacitor manufactured from the sintered body of a niobium powder of the present invention is prevented from deterioration in the performance for a long period of time and has high reliability.

Abstract: A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from 0.1 to 5 ?m; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.

Abstract: A niobium powder for capacitors, which contains niobium monoxide crystal or hexaniobium monoxide crystal; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material.

Abstract: A niobium primary powder having an average particle size of 0.01 to 0.5 ?m and an average circular degree of 0.8 or more, the circular degree being defined by 4 ?A/L2 (wherein A is an area of a solid projected on a plain face and L is an outer circumferential length of the projection view); a niobium primary agglomerated powder having an average particle size of 0.03 to 20 ?m, which is an agglomerate of the niobium primary powder; a niobium secondary agglomerated powder having an average particle size of 50 to 150 ?m, which is obtained by granulating the primary agglomerated powder; a sintered body of the niobium primary agglomerated powder or niobium secondary agglomerated powder; and a capacitor using the sintered body. By using sintered bodies of the niobium primary agglomerated powder or niobium secondary agglomerated powder, a capacitor having a large capacitance per unit volume and good voltage resistance can be manufactured.

Abstract: A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from 0.1 to 5 &mgr;m; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.

Abstract: Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.

Abstract: A niobium powder for capacitors, having an average particle size of from 10 to 500 &mgr;m, which is a granulated powder having an oxygen content of 3 to 9% by mass; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material. A capacitor manufactured from the sintered body of a niobium powder of the present invention is prevented from deterioration in the performance for a long period of time and has high reliability.

Abstract: A niobium powder for capacitors, having an average particle size of from 10 to 500 &mgr;m, which is a granulated powder having an oxygen content of 3 to 9% by mass; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material. A capacitor manufactured from the sintered body of a niobium powder of the present invention is prevented from deterioration in the performance for a long period of time and has high reliability.

Abstract: A niobium primary powder having an average particle size of 0.01 to 0.5 &mgr;m and an average circular degree of 0.8 or more, the circular degree being defined by 4 &pgr;A/L2 (wherein A is an area of a solid projected on a plain face and L is an outer circumferential length of the projection view); a niobium primary agglomerated powder having an average particle size of 0.03 to 20 &mgr;m, which is an agglomerate of the niobium primary powder; a niobium secondary agglomerated powder having an average particle size of 50 to 150 &mgr;m, which is obtained by granulating the primary agglomerated powder; a sintered body of the niobium primary agglomerated powder or niobium secondary agglomerated powder; and a capacitor using the sintered body. By using sintered bodies of the niobium primary agglomerated powder or niobium secondary agglomerated powder, a capacitor having a large capacitance per unit volume and good voltage resistance can be manufactured.

Abstract: The present invention comprises a metal bond grind stone having a flat plate portion 10a and a tapered portion 10b; an electrode 13 opposed to the metal bond grind stone with a gap therebetween; voltage applying means 12 for applying a direct-current pulse voltage between the metal bond grind stone and the electrode; conductive liquid supplying means 14 for supplying a conductive liquid 15 between the metal bond grind stone and the electrode; and grind stone moving means 16 for moving the metal bond grind stone in a direction orthogonal to the shaft center thereof, and an ingot 1 of a single crystal SiC is thereby cut at the tapered portion 10b of the metal bond grind stone and the cut surface is then specular-worked at the flat plate portion 10a.

Abstract: An object of the present invention is to provide a niobium powder for producing a capacitor exhibiting excellent reliability; a sintered body formed from the powder; and a capacitor including the sintered body. Even when niobium exhibiting high affinity to oxygen is employed, the niobium powder is obtained by regulating the amount of oxygen contained in the powder. By employing niobium powder which has undergone partial oxidation and partial nitridation, in which the mass ratio of the nitrogen content to the oxygen content is about 1/45 or more, a capacitor exhibiting excellent reliability can be obtained.

Abstract: A nobium powder for capacitors, which contains from 0.05 to 20% by mass of niobium monoxide crystal and from 0.05 to 20% by mass of hexaniobium monoxide crystal; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part provided on the dielectric material. A capacitor manufactured from a sintered body of a niobium powder of the present invention is favored with good high-temperature characteristics.

Abstract: A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from 0.1 to 5 &mgr;m; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.

Abstract: Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.

Abstract: A niobium powder for capacitors, having an average particle size of from 10 to 500 &mgr;m, which is a granulated powder having an oxygen content of 3 to 9% by mass; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part electrode provided on the dielectric material. A capacitor manufactured from the sintered body of a niobium powder of the present invention is prevented from deterioration in the performance for a long period of time and has high reliability.

Abstract: A thin strip-shaped grindstone 12 is held flat under tension and moved backwards and forwards in the longitudinal direction, while the grindstone is moved in a direction perpendicular to a cylindrical ingot 1 and cuts the ingot. A metal-bonded grindstone is used as the strip-shaped grindstone 12, at least one pair of electrodes 23 are disposed adjacent to both surfaces of the metal-bonded grindstone one on each side of the ingot. The metal-bonded grindstone is made the positive electrode and DC voltage pulses are applied between the grindstone and the electrodes, and at the same time, a conducting processing fluid 25 is fed to the gaps between the metal-bonded grindstone and the electrodes, and both surfaces of the metal-bonded grindstone are dressed electrolytically on both sides while the cylindrical ingot is being cut by the metal-bonded grindstone.

Abstract: Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.