Abstract: A position change section of a processing device changes the position of a treatment object, at the time of performing a process by a process section, to correspond to a predetermined position in conformity to the treatment object. An inspection device inspects the occurrence of a defect on the treatment object having been subjected to processes by a plurality of processing devices. Then an analyzing process for specifying in which processing device the defect occurred is carried out based on (i) positional information of the treatment object, in each of the processing devices, and (ii) defect information defected by the inspection device. With this arrangement, during the process of manufacture of treatment objects, it is possible to precisely specify which processing device or processing device group caused the defect, without performing processes such as attaching, to the treatment object, information regarding processing devices which have conducted processes.

Abstract: A semiconductor device includes a first wiring layer having a first wiring, a second wiring layer having a second wiring formed over the first wiring layer, and a first insulating layer interposed between the first and second wiring layers, wherein the second wiring layer or an upper layer thereof has a fine projection, and the diameter of a circle circumscribing the projection in a plane or sectional view is 40 nm or less.

Abstract: A thermal treatment apparatus and method of thermal treatment are provided wherein the apparatus includes a treatment chamber used to thermally treat an object material held therein, fluid passages formed so as to extend along an outer surface of the treatment chamber, a heating means for the thermal treatment operation placed in the fluid passages, a fluid passing means for passing a fluid through the fluid passages while bringing the fluid into contact with heating surfaces of the heating means, and a control means for controlling the temperature and flow rate of the fluid passing through the fluid passages in at least one period of time during the thermal treatment operation, the fluid passing means further includes a plurality of blast rate variable fans arranged in parallel with the fluid passage and having mutually different flow rates.

Abstract: A semiconductor device includes a first wiring layer having a first wiring, a second wiring layer having a second wiring formed over the first wiring layer, and a first insulating layer interposed between the first and second wiring layers, wherein the second wiring layer or an upper layer thereof has a fine projection, and the diameter of a circle circumscribing the projection in a plane or sectional view is 40 nm or less.

Abstract: A position change section of a processing device changes the position of a treatment object, at the time of performing a process by a process section, to correspond to a predetermined position in conformity to the treatment object. An inspection device inspects the occurrence of a defect on the treatment object having been subjected to processes by a plurality of processing devices. Then an analyzing process for specifying in which processing device the defect occurred is carried out based on (i) positional information of the treatment object, in each of the processing devices, and (ii) defect information defected by the inspection device. With this arrangement, during the process of manufacture of treatment objects, it is possible to precisely specify which processing device or processing device group caused the defect, without performing processes such as attaching, to the treatment object, information regarding processing devices which have conducted processes.

Abstract: According to the present invention, there is provided an insulator capacitance analyzer for analyzing C-V characteristics of a first MIS structure having unknown capacitance, which includes: a capacitance structure having known capacitance and configured so as to be serially connectable to the first MIS structure; and a measuring section for measuring synthesis capacitance of the serially-connected first MIS structure and capacitance structure.

Abstract: A thermal treatment apparatus is provided which is capable of reducing a thermal treatment temperature to a set level speedily, and which has a high temperature-stability in a wide treatment temperature range.

Abstract: According to the present invention, there is provided an insulator capacitance analyzer for analyzing C-V characteristics of a first MIS structure having unknown capacitance, which includes: a capacitance structure having known capacitance and configured so as to be serially connectable to the first MIS structure; and a measuring section for measuring synthesis capacitance of the serially-connected first MIS structure and capacitance structure.