Patents by Inventor Nobuyuki Okamura

Nobuyuki Okamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5970907
    Abstract: To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.
    Type: Grant
    Filed: January 27, 1997
    Date of Patent: October 26, 1999
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoshi Takai, Atsushi Yamagami, Nobuyuki Okamura
  • Patent number: 5846612
    Abstract: Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.
    Type: Grant
    Filed: April 3, 1996
    Date of Patent: December 8, 1998
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoshi Takaki, Atsushi Yamagami, Nobuyuki Okamura
  • Patent number: 5788786
    Abstract: A pneumatic tire in which a foamed rubber layer having closed cells is provided at a surface of a tire tread which substantially contacts at least a road surface, wherein the foamed rubber layer has closed cells whose average diameter is about 1 m to about 120 m and has an expansion ratio of about 1% to about 100%, a solid-phase rubber portion of the foamed rubber layer has a rubber composition in which at least both of a diene-type rubber and silica are mixed, and an amount of the silica is about 10 to about 80 parts by weight based on 100 parts by weight of the diene-type rubber. The pneumatic tire exhibits excellent traction and braking abilities and controllability on snowy, icy and wet road surfaces.
    Type: Grant
    Filed: May 19, 1997
    Date of Patent: August 4, 1998
    Assignee: Bridgestone Corporation
    Inventors: Koji Yamauchi, Nobuyuki Okamura, Kojiro Yamaguchi, Kazunori Shinohara
  • Patent number: 5728278
    Abstract: A plasma processing apparatus has a vacuum container which contains a pair of electrodes for causing a discharge for generating a plasma, and a shielding plate for separating a plasma processing region including a space between the electrodes from a region in contact with the inner wall of the vacuum container in such a manner that both the regions communicate with each other. The apparatus includes a means for causing a pressure difference between the plasma processing region and the region in contact with the inner wall of the vacuum container.
    Type: Grant
    Filed: November 14, 1994
    Date of Patent: March 17, 1998
    Assignee: Canon Kabushiki Kaisha/Applied Materials Japan Inc.
    Inventors: Nobuyuki Okamura, Atsushi Yamagami, Tadahiro Ohmi, Haruhiro Harry Goto, Tadashi Shibata
  • Patent number: 5540781
    Abstract: A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode electrode elements by way of a high frequency power supply means for generating a plasma in a reaction chamber thereby forming a deposited film; and a VHF plasma CVD apparatus suitable for carrying out the VHF plasma process.
    Type: Grant
    Filed: November 23, 1994
    Date of Patent: July 30, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Atsushi Yamagami, Nobuyuki Okamura, Satoshi Takaki
  • Patent number: 5534070
    Abstract: A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequen
    Type: Grant
    Filed: November 30, 1994
    Date of Patent: July 9, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuyuki Okamura, Atsushi Yamagami, Satoshi Takaki
  • Patent number: 5510011
    Abstract: In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.
    Type: Grant
    Filed: December 22, 1994
    Date of Patent: April 23, 1996
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuyuki Okamura, Atsushi Yamagami
  • Patent number: 5478609
    Abstract: A substrate-heating mechanism has a heat source for heating a substrate for heating a substrate face side reverse to a film formation face in a film deposition on the film formation surface of the substrate held on a substrate holder in a vacuum chamber, the mechanism comprises a second vacuum chamber for maintaining vacuum the substrate face reverse to the film formation face.
    Type: Grant
    Filed: July 23, 1993
    Date of Patent: December 26, 1995
    Assignee: Canon Kabushiki Kaisha
    Inventor: Nobuyuki Okamura
  • Patent number: 5316645
    Abstract: A plasma processing apparatus comprises: a first electrode connectable with a plasma generating power source; a second electrode capable of supporting a substrate to be subjected to a plasma-involving surface treatment; a third electrode enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means for controlling the potential of the third electrode.
    Type: Grant
    Filed: February 17, 1993
    Date of Patent: May 31, 1994
    Assignees: Canon Kabushiki Kaisha, Applied Materials Japan Inc., Tadahiro Ohmi
    Inventors: Atsushi Yamagami, Nobuyuki Okamura, Tadahiro Ohmi, Haruhiro H. Goto, Tadashi Shibata
  • Patent number: 4871794
    Abstract: A pneumatic tire having improved heat resistance and gripping performance is obtained by using as a tread rubber a rubber composition containing particular amounts of specified p-phenylene diamine derivative and specified carbon black.
    Type: Grant
    Filed: June 29, 1988
    Date of Patent: October 3, 1989
    Assignee: Bridgestone Corporation
    Inventors: Michio Itoh, Hisao Yamamoto, Nobuyuki Okamura
  • Patent number: 4818601
    Abstract: A rubber-cord composite body used for cord reinforcing rubber articles is produced by embedding fiber cords treated with an epoxy compound and further with a particular resorcin-formaldehyde-rubber latex adhesive into a particular rubber composition containing 0.5.about.10 parts by weight of each of a bismaleimide compound and sulfur.
    Type: Grant
    Filed: February 9, 1988
    Date of Patent: April 4, 1989
    Assignee: Bridgestone Corporation
    Inventors: Michio Itoh, Tadashi Saito, Nobuyuki Okamura, Hisao Yamamoto, Yutaka Iseda, Hirohiko Takagi