Abstract: A method evaluates the mobility of a polymer composition in a high-temperature region of 150° C. or above. The method for evaluating a physical property of a polymer composition, the method comprising the steps of: obtaining a thin film sample which is formed on a substrate and which comprises: a fluorescent probe including a fluorescent rare earth complex having a melting point of 200° C. or higher; and a target polymer composition; and obtaining a relationship between a temperature and a fluorescent characteristic of the thin film.

Abstract: A method evaluates the mobility of a polymer composition in a high-temperature region of 150° C. or above. The method for evaluating a physical property of a polymer composition, the method comprising the steps of: obtaining a thin film sample which is formed on a substrate and which comprises: a fluorescent probe including a fluorescent rare earth complex having a melting point of 200° C. or higher; and a target polymer composition; and obtaining a relationship between a temperature and a fluorescent characteristic of the thin film.

Abstract: A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

Abstract: Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0?x?1, ?0.2?y?1.2, z?0.4 and 0.5?(x+y)/z?3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0?x?1, ?0.2?y?1.2, z?0.4 and 0.5?(x+y)/z?3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

Abstract: A switching device contains a thin film containing an organic material disposed between at least two electrodes, and the organic material is, for example, a triphenylamine compound represented by the general formula (I):

Abstract: Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length.

Abstract: An OTFT is formed by forming a pair of recesses, one being a groove and another being groove or a hole. A source electrode is formed by filling one of the recesses. A drain electrode is formed by filling the other one of the recesses. A film of organic semiconductor material is formed on the source electrode and the drain electrode and makes electrical contact therewith. A gate insulating film is formed on the film of organic material, and a gate electrode is formed on the gate insulating film. The method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode and the drain electrode formed on the substrate such as a plastic substrate by an inexpensive process.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A compound useful for a positive charge type electrophotographic photoreceptor with high sensitivity for copiers and printers by using such a novel organic material as a charge transport substance in a photosensitive layer and an electrophotographic apparatus using the same. The compound has a structure represented by the following general formula (I). (In the general formula (I), R1, R2, R3, and R4 each is an alkyl group or the like; R5 and R6 each-is an aryl group or the like; and Z represents a structure having the following general formula (F-A), (F-B) or (F-C). (In the formulae, R7 and R8 each is an optionally substituted alkyl group; m and n each represents an integer of from 0 to 2; and X is a sulfur atom or an oxygen atom.).

Abstract: A thin film field effect transistor is disclosed that includes a gate electrode, a gate insulator film the on gate electrode, and a first organic electronic material film containing a first organic electronic material on the gate insulator film. A source electrode and a drain electrode are spaced apart from each other on the first organic electronic material film. The first organic electronic material film includes a portion between the source electrode and the drain electrode that is in contact with the gate insulator film. This portion provides a current path. The current is controlled by the potential of the gate electrode. There is a second organic electronic material film that is in contact with the surface of first organic electronic material film opposite to the portion that provides the current path. The second organic electronic material film contains a second organic electronic material and an electron acceptor or an electron donor.

Abstract: The present invention provides a switching element in which the compositional deviation of material is suppressed and that attains uniform bistability performance and is suitable for mass production. In a switching element comprising an organic bistable material, which exhibits two stable states in resistance under applied voltage, arranged between at least two electrodes, the organic bistable material comprises at least a compound having an electron-donating functional group and an electron-accepting functional group in each molecule. It is preferred that, for example, an aminoimidazole type compound, a pyridone type compound, a stilbene type compound or a butadiene type compound be used as the above compound.

Abstract: A highly sensitive positively charged type electrophotographic photoconductor includes an organic compound that transports electrons efficiently, improving light emission efficiency. The photoconductor is used in an electrophotographic drum, an electrophotographic cartridge and an electrophotographic apparatus.

Abstract: An electrophotographic photoreceptor has excellent electrical properties and is stable even upon repeated use. An electrophotographic apparatus using the electrophotographic photoreceptor uses a compound having an excellent electron transporting ability in a photosensitive layer of the electrophotographic photoreceptor. An electrophotographic photoreceptor, in which a photosensitive layer is located on an electrically conductive substrate either directly or via an undercoat layer, contains a compound having a structure represented by the general formula (I). An electrophotographic apparatus contains the above-mentioned electrophotographic photoreceptor, and carries out a charging process through a positive charging process.

Abstract: Quinomethane compounds having a structure represented by the general formula (1): wherein R1 to R4 and R9 to R12 are the same or different and each represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a cyclic alkyl group, an aryl group, or an alkoxy group having 1 to 6 carbon atoms; R5 and R6 are the same or different and each represents an alkyl group having 1 to 12 carbon atoms, an aryl group, or a heterocyclic group; R7 and R8 each represents a hydrogen atom; and optional substituents are each a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an aryl group, or a heterocyclic group. Since these compounds transport electrons efficiently, they are useful in electrophotographic photoreceptors and/or organic electroluminescence applications.

Abstract: A highly sensitive positively charged type electrophotographic photoconductor includes an organic compound that transports electrons efficiently, improving light emission efficiency. The photoconductor is used in an electrophotographic drum, an electrophotographic cartridge and an electrophotographic apparatus.

Abstract: An electrophotographic photoreceptor has excellent electrical properties and is stable even upon repeated use. An electrophotographic apparatus using the electrophotographic photoreceptor uses a compound having an excellent electron transporting ability in a photosensitive layer of the electrophotographic photoreceptor. An electrophotographic photoreceptor, in which a photosensitive layer is located on an electrically conductive substrate either directly or via an undercoat layer, contains a compound having a structure represented by the general formula (I).