Patents by Inventor Nobuyuki Sugishita

Nobuyuki Sugishita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4581279
    Abstract: A thick film circuit board comprises at least parts of SiC substrate at which a thick film resistor is provided being coated with a glass layer having a good adhesion to the SiC substrate and the same or similar coefficient of thermal expansion as or to that of the SiC substrate, and no swelling, cracking and peeling appear on the thick film resistor and no electroconductive component is formed on laser-trimmed parts of the thick film resistor.
    Type: Grant
    Filed: December 29, 1983
    Date of Patent: April 8, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Sugishita, Hideo Suzuki, Takahiko Ohkohchi
  • Patent number: 4547625
    Abstract: A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO.sub.2, 13-25 wt. % of B.sub.2 O.sub.3, 5-13 wt. % of Al.sub.2 O.sub.3, each 1-5 wt. % of PbO, MgO, and BaO, and each 1-2 wt. % of Na.sub.2 O and K.sub.2 O and (2) 70-10 wt. % of a silica glass, is provided.
    Type: Grant
    Filed: July 7, 1983
    Date of Patent: October 15, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Hirayoshi Tanei, Akira Ikegami, Nobuyuki Sugishita
  • Patent number: 4490429
    Abstract: The multilayer circuit board is constituted of an inorganic insulating material such as a crystallizable glass, crystalline oxide or noncrystallized glass; a conductive material such as a metal or a mixture of a metal with noncrystallized glass; a resistor material consisting of a mixture of a conductive material with the crystallizable glass or noncrystallized glass; and a dielectric material consisting of a mixture of a barium titanate-other oxide mixture with the noncrystallized glass or crystallizable glass, of a lead-containing perovskite type oxide or of a lead-containing laminar bismuth oxide, said board has a multilayer structure wherein a first insulating layer; a first resistor circuit or alternatively first capacitor circuit or alternatively first resistor-capacitor circuit; a second insulating layer; a second resistor circuit or alternatively second capacitor circuit or alternatively second resistor-capacitor circuit are superposed in this order, provided that the second insulating layer has a thr
    Type: Grant
    Filed: July 16, 1982
    Date of Patent: December 25, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Nobuyuki Sugishita, Akira Ikegami
  • Patent number: 4450494
    Abstract: A magnetic head having a magnetic core formed by facing a pair of magnetic substances through a working gap at a head section confronting a magnetic recording medium is disclosed in which at least one of the magnetic substances has magnetic anisotropy, and an angle .alpha. (in a C-shaped core half) and/or an angle .alpha.' (in an I-shaped core half) between a core surface confronting the magnetic recording medium and a direction having a maximum magnetic permeability in a main magnetic circuit plane of the magnetic substance having magnetic anisotropy is made larger than an orientation angle of the above direction for making minimum the magnetic reluctance of the main magnetic circuit of the magnetic core by .beta. (for .alpha.) and/or .beta.' (for .alpha.') to improve the recording/reproducing characteristic of the magnetic head, where .beta. is given by a formula ##EQU1## is equal to or less than 25.degree.
    Type: Grant
    Filed: September 22, 1981
    Date of Patent: May 22, 1984
    Assignee: Hitachi Ltd.
    Inventors: Hideo Fujiwara, Mitsuhiro Kudo, Teizo Tamura, Nobuyuki Sugishita, Yoshihiro Shiroishi, Takeshi Kimura, Kiminari Shinagawa, Noriyuki Kumasaka
  • Patent number: 4424251
    Abstract: A thick-film multi-layer wiring board in which the thick-film resistor provided in the inner layer is coated with a glass material selected from (a) and (b) below:(a) crystallized glass which is crystallized at 850.degree. C. or above, and(b) amorphous glass having a softening temperature of 750.degree. C. or above and composed of glass and at least one refractory oxide selected from Al.sub.2 O.sub.3 and SiO.sub.2.
    Type: Grant
    Filed: July 28, 1981
    Date of Patent: January 3, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyuki Sugishita, Akira Ikegami
  • Patent number: 4316228
    Abstract: In a magnetic head a single-crystal Mn--Zn ferrite is employed as a core material, and cut-away parts in the vicinities of a gap are filled with a glass the contraction rate of which is lower than that of the ferrite. A principal magnetic circuit-forming plane of the core is brought into agreement with the {1 1 0} plane of the ferrite, while an angle .theta. defined between the <1 0 0> direction within the {1 1 0} plane of the ferrite and a gap forming plane is made 5.degree.-40.degree. or 80.degree.-120.degree.. The magnetic head thus constructed exhibits very favorable write and read characteristics.
    Type: Grant
    Filed: December 3, 1979
    Date of Patent: February 16, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Fujiwara, Mitsuhiro Kudo, Teizou Tamura, Nobuyuki Sugishita, Yoshihiro Shiroishi, Takeshi Kimura, Kiminari Shinagawa, Noriyuki Kumasaka
  • Patent number: 4220547
    Abstract: A dielectric paste for a thick film capacitor comprises barium titanate powder, glass frit, magnetite powder, an organic vehicle and a surface-active agent. A dielectric constant higher than 1,100 is obtained by firing at a temperature of 900.degree. C. or lower.
    Type: Grant
    Filed: December 19, 1978
    Date of Patent: September 2, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Katsuo Abe, Noriyuki Taguchi, Nobuyuki Sugishita, Tokio Isogai
  • Patent number: 4139832
    Abstract: A glas-coated thick film resistor can be obtained by coating completely with a crystallizable glass having a crystallizing temperature of 400 to 600.degree. C and consisting of 62 to 80% by weight of PbO, 5 to 31% by weight of ZnO, 5 to 18% by weight of B.sub.2 O.sub.3, 0.2 to 8% by weight of Al.sub.2 O.sub.3 and 1 to 5% by weight of SiO.sub.2.
    Type: Grant
    Filed: March 1, 1977
    Date of Patent: February 13, 1979
    Assignee: Hitachi, Ltd.
    Inventors: Yoshimi Yoshino, Nobuyuki Sugishita