Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising a compound which is a disilane and which comprises at least one chloro group, at least one dialkylamino group and at least one hydrido group. A composition for film forming is also disclosed, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, a nitrogen precursor, and an oxygen precursor. Further disclosed is a process of synthesizing the Silicon Precursor Compound; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound; the silicon-containing film formed thereby; and a method of forming the Silicon Precursor Compound.