Abstract: The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the intersection of two step networks, each terrace having a first dimension corresponding to the step width of one of the step networks and a second dimension corresponding to the step width of the other step network, each terrace supporting at least two islands formed of a different superimposition of monolayers wherein the composition is chosen between at least one first composition and one second composition.

Abstract: Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.

Abstract: A process for permitting defects or stresses in a structure to be revealed, including (a) securing by molecular bonding of a face of a first element containing crystalline material with a face of a second element containing crystalline material, so that the faces have offset crystalline lattices, the securing causing the formation of a lattice of crystalline defects and/or stress fields in a crystalline zone next to the securing interface, and (b) reducing the thickness of one of the elements until at least a thin film is obtained which adheres to the other element, along the securing interface to form the structure, the thickness of the thin film being such that its free face does not reveal the crystalline defect lattice and/or the stress fields, but allowing to perform (c) treatment of the thin film resulting in that its free face reveals the crystalline defect lattice and/or the stress fields.

Abstract: Method for producing a stacked structure by obtaining at least two crystalline parts by detaching them from a same initial structure, each crystalline part having one face created by the detachment having a tilt angle with a reference crystalline plane of the initial structure. Structures are formed from the crystalline parts, each structure having a face to be assembled that has a controlled tilt angle in relation to the tilt angle of the created face of the corresponding crystalline part. The structures are assembled while controlling their relative positions, rotating in an interface plane, in relation to relative positions of respective crystalline parts within the initial structure, to obtain a controlled resulting tilt angle at the interface between the structures. The method may find application particularly in microelectronics, optics, and optoelectronics.

Abstract: The invention relates to a process permitting defects or stresses in a structure to be revealed, comprising the following steps:

Abstract: The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises: a) a substrate (1) comprising at least one part composed of a crystalline material, this part having a surface (2) with a stress field or a topology associated with a stress field, the stress field being associated with dislocations, b) an intermediate layer (3) bonded to the surface (2), and having a thickness and/or composition and/or a surface state enabling transmission of said stress field through this layer as far as its free face that supports microstructures or nanostructures (4).

Abstract: The invention concerns a light emitting and guiding device comprising at least one active region (22) in silicon and the means for creating photons in the said active region. In accordance with the invention, the means for creating the photons comprise a diode (22c, 22d) formed in the active region. In addition, the device includes the means for confining the carriers injected by the diode, and the silicon in the active region is mono-crystalline.

Abstract: The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the intersection of two step networks, each terrace having a first dimension corresponding to the step width of one of the step networks and a second dimension corresponding to the step width of the other step network, each terrace supporting at least two islands formed of a different superimposition of monolayers wherein the composition is chosen between at least one first composition and one second composition.

Abstract: The invention relates to a plasma cell able to be fixed in a vacuum chamber by means of a first flange, having an outer envelope in which a gas under pressure (P′) is added and provided in its upper part with a discharge opening, and electrodes, at least one anode and one cathode, arranged in said envelope and mounted on a second flange, to whose terminals a voltage may be applied, such as to cause ionization of the gas producing the monoatomic species which are to be discharged through the opening. Electrodes can be dismounted and are assembled on a second removable flange. Electrically insulated separation means are provided between cathode and anode(s). A gas inlet opening is provided in the lower part of the envelope.

Abstract: A multispectral resonant-cavity detector is formed of at least one cavity (2) resonating at not less than two wavelengths and containing at least two layers (12, 14) that absorb the corresponding radiation and are placed at antinodes specific to stationary waves in the cavity, the cavity having at least two P-N junctions at whose space charge zones the layers are disposed. For each cavity, there are at least two electrical contacts to polarize the two junctions inversely to each other to detect the corresponding radiation.