Abstract: An apparatus for measuring semiconductor wafer shape that minimizes wafer distortion. The apparatus includes a plurality of wafer gripping fingers for holding a wafer in a predetermined position during wafer measurement. Each finger includes a groove that contacts the edge of the wafer. The groove and the wafer edge have respective radii of curvature, in which the radius of curvature of the groove is greater than that of the wafer edge. Each finger includes a rigid member having a recess formed in a central location at one end thereof, and a compliant material such as PEEK disposed in the recess in which the groove is formed. The compliant material extends a first distance beyond the rigid member at the central groove location and a second shorter distance beyond the rigid member on each side of the central location.

Abstract: Apparatus and methods for calibrating a transducer measurement system having a plurality of subsystems, permitting total system calibration by a few selected adjustments without requiring complete system calibration when a new subsystem is added or a subsystem replaced and without requiring adjustments to be made to each individual subsystem. The measurement system provides a calibrated measurement signal indicative of a characteristic of an object with which the transducer interfaces. Each subsystem is characterized in terms of a minimum number of parameters associated therewith and the parameters are mathematically combined to reflect values of adjustable subsystem or system components. In this manner, variations associated with each separable subsystem from nominal, specified values, are combined and corrected by a single adjustment of a minimum number of selected adjustable components representing the degrees of freedom for errors in the system.

Abstract: A measurement station which rotates a wafer in a vertical plane and moves a scanning sensor linearly along an axis which is parallel to the wafer rotation plane, thus providing a spiral, or other, scan path across the wafer. The vertical orientation reduces errors from weight induced sagging, especially of large, e.g. 300 mm wafers. The measurement station includes wafer grippers which move in the wafer's plane for securing the wafer in position for rotation. The measurement station also includes master calibration gauges which simplify calibration and obviate the need for calibration test wafers. A technique for reducing vibration and assuring scan repeatability includes coasting of the wafer in rotation and coordinated linear probe motions for scanning. Probe measurement data obtained is digitized early and calibration, demodulation, filtering and other processing is done digitally.

Abstract: Apparatus and methods for calibrating a transducer measurement system having a plurality of subsystems, permitting total system calibration by a few selected adjustments without requiring complete system calibration when a new subsystem is added or a subsystem replaced and without requiring adjustments to be made to each individual subsystem. The measurement system provides a calibrated measurement signal indicative of a characteristic of an object with which the transducer interfaces. Each subsystem is characterized in terms of a minimum number of parameters associated therewith and the parameters are mathematically combined to reflect values of adjustable subsystem or system components. In this manner, variations associated with each separable subsystem from nominal, specified values, are combined and corrected by a single adjustment of a minimum number of selected adjustable components representing the degrees of freedom for errors in the system.

Abstract: A system for semiconductor wafer processing including wafer measurement and characterization having vertical wafer processing apparatus with which only the edge of a wafer is contacted. A wafer processing station is provided having a support bridge to which a rotor subassembly is attached. The rotor subassembly includes a housing and a rotor having a central aperture and a retention mechanism for retaining a wafer in a measurement position. A pair of pivotable probe arms includes one probe arm positioned on either side of the wafer. A sensor provides an image of a wafer prior to its retention by the retention mechanism in the measurement position in order to permit the retention mechanism to avoid any flat on the wafer. Additional sensors eliminate the effect of wobble or vibration of the rotor on wafer measurement results. Artifact removal processors are provided for removing errors in the measured wafer data and a database stores the uncorrupted and corrected data.

Abstract: An alignment station for elements such as semiconductor wafers on a robot arm uses a rotating support and edge detector which in combination are operative to place a wafer on the rotating support, detect wafer alignment, move the wafer to bring it into alignment either on the rotating support itself or onto a separate station.

Abstract: An alignment station for elements such as semiconductor wafers on a robot arm uses a rotating support and edge detector which in combination are operative to place a wafer on the rotating support, detect wafer alignment, move the wafer to bring it into alignment either on the rotating support itself or onto a separate station.

Abstract: An alignment station for elements such as semiconductor wafers on a robot arm uses a rotating support and edge detector which in combination are operative to place a wafer on the rotating support, detect wafer alignment, move the wafer to bring it into alignment either on the rotating support itself or onto a separate station.

Abstract: An edge detection system for measuring lateral position in the presence of height variations such as found in gauging the edge position of a wafer uses first and second capacitive probes formed of passive elements with the active components kept outside the probe and at a distance that permits a smaller, stabler and more economical probe to be located at the location of the wafer. The probes are instrumented in an electronic circuit having plural operational amplifiers that drive the probes to compensate the edge detection for wafer height effects.

Abstract: A compensated capacitive probe system in which the probe and a guard ring are placed in the feedback path of an operational amplifier. An input signal is applied to the operational amplifier in combination with a portion of the guard signal. The resulting configuration compensates for stray capacitance at a measuring electrode of the probe and for the fact that the operational amplifier is other than mathematically ideal.

Abstract: An error compensated thickness measuring system utilizing first and second probes placed on opposite sides of a semiconductor wafer whose thickness is to be measured. The output of the probes is linearized and electronically processed to provide a signal representative of the thickness of the semiconductor wafer. The electronic processing includes an error compensating circuit which removes higher order error in the thickness signal attributable to the wafer being other than precisely centered between the two probes. The error compensating circuitry operates to produce a scaled higher order representation of the displacement of the wafer from the centered condition to combine this with the thickness signal to produce an error compensated signal.

Abstract: An automatic wafer flatness station is disclosed for obtaining a flatness profile of a semiconductor wafer or other sample from thickness data. The sample to be flatness profiled is supported so that it maintains its natural shape. A processor coupled to a capacitive thickness sensing head and to the support medium is operative to successively position each of a plurality of preselected points of the sample into proximity with the capacitive thickness sensing head for measuring the thickness of the sample at the corresponding point. An analog-to-digital converter converts the thickness measurement into data that is stored in a data table in system memory, the individual addresses of which correspond to the spacial location on the sample of each such preselected point. The processor is operative after the data table is compiled for each sample to compute the flatness profile of one surface therefrom relative to a selectable plane.

Abstract: The present invention discloses means and method for obtaining an increased spacial resolution from a sensor that includes a probe having a characteristic physical dimension that limits its spacial resolution. Such a probe may include a rectangular sensing surface wherein the probe sensitivity increases with surface area while the spacial resolution decreases with increasing surface area. The probe and an object to be measured are controllably moved relatively to each other in such a way as to define preselected increments of relative movement that are selected to be a fraction of the characteristic physical dimension of the probe.

Abstract: The present invention discloses apparatus and method for electronically determining and compensating mechanical fixture induced errors from desired object related information in a measurement system such that data acquisition is obtained with a precision very much better than the manufacturing tolerances of the mechanical fixture. In the preferred embodiment, bow and warp profiles of a semiconductor wafer are obtained with an X, .theta., and Z moveable wafer-receiving chuck that have an accuracy very much better than the mechanical tolerances of the X, .theta., and Z moveable chuck. The system provides for measurement of objectrelated information in plural orientations. Signal processing is disclosed for separating out of the object related information X and .theta. fixture induced error contributions to the data arising from mechanical tolerance of the fixture. Signal processing is disclosed for compensating bow and warp profiles of semiconductor wafers in accordance with the X and .theta.

Abstract: A conductivity-type sensor, typically for use in a wafer sorting system, for detecting the conductivity-type of semiconductor wafers. In measuring conductivity, a two-contact probe is applied to the semiconductor wafer and any static charge which may have been accumulated on the wafer is initially discharged at an accelerated rate. The charge state is measured and an acceptable level of discharge requires repeated indications of discharge below a predetermined level. Discharging and charge measurement is repeated a predetermined number of times as necessary to accomplish discharging or the wafer identified as defective. The conductivity-type of the discharged wafer is read from the rectified polarity of an oscillating signal applied to the contacts. A valid indication of conductivity-type requires two consecutive readings of the same conductivity-type.

Abstract: An automatic wafer alignment station is disclosed for aligning a wafer having flats about its centroid with the flats oriented in a preselected spatial direction. The wafer is held by a vacuum chuck which is operatively connected to a motor driven carriage for controlled movement about an X axis, to a .theta. actuator carried by the carriage for controlled rotation about the axis of the chuck, and to a Z actuator carried by the carriage for controlled motion about a Z axis. An X capacitive sensor and a Z capacitive sensor are positioned near the wafer. An X processing and Z compensating circuit is responsive to the X and the Z capacitive sensor output signals and provides an electrical signal that has values which exclusively represent the position of the edge of the wafer along the X axis only over a predetermined angular range. Circuit means including an A/D converter and a microprocessor respond to the electrical signal and produce a plurality of corrective signals to the X, Y, and .theta.

Abstract: A self inverting gauging system for such parameters as capacitively sensed distance or inductively sensed resistivity in which the sensor provides an output inversely varying with the dimension of interest. The gauge typically includes a dual slope integrator responsive to a reference value on the up integration and to the sensor output on the down integration. The interval of the down integration necessary to reset the integrator to the original value varies directly, rather than inversely, with the dimension of interest and is typically provided as the digital output indication of a counter. In the application to resistivity gauging, the up integration reference signal is preferably provided by the output of a thickness gauge such that the ultimate counter display represents element resistivity compensated for thickness.

Abstract: A system for reducing higher order nonlinearities in the linearized output of a dimension gauging probe in which the dimension gauging probe provides an output varying inversely with the physical dimension gauged which is in turn linearized to a signal varying proportionally with the physical dimension. Higher order nonlinearities, an error condition, which deviate the correspondence between the gauged dimension and the output from a linear or straight-line function, are reduced by feedback of the linearized output to the probe and, preferably, by feedforward of a portion of the probe output signal to the linearized signal.

Abstract: A self inverting gauging system for such parameters as capacitively sensed distance or inductively sensed resistivity in which the sensor provides an output inversely varying with the dimension of interest. The gauge typically includes a dual slope integrator responsive to a reference value on the up integration and to the sensor output on the down integration. The interval of the down integration necessary to reset the integrator to the original value varies directly, rather than inversely, with the dimension of interest and is typically provided as the digital output indication of a counter. In the application to resistivity gauging, the up integration reference signal is preferably provided by the output of a thickness gauge such that the ultimate counter display represents element resistivity compensated for thickness.

Abstract: A noncontact gauge for edge detecting of semiconductor wafers in a test rig which indexes between circuits in the semiconductor wafer to provide functional tests upon them. The noncontact gauge includes a capacitive probe having an elongated finger that is bent into position a few thousands of an inch above the wafer when positioned for circuit tests in order to detect whether the circuit test system, in indexing from circuit to circuit in the row and column matrix of integrated circuit chips in the wafer, has moved to one edge or the other of the water. The edge detection system operates with conventional wafer test systems which raise and lower the wafer between tests to index from one integrated circuit to the next in the wafer matrix.