Abstract: According to an embodiment of the present disclosure, a semiconductor memory device includes a mode register circuit including a plurality of write mode register sets for providing a plurality of setting codes or a plurality of monitoring codes; and a defect detection circuit suitable for outputting a defect determination signal by detecting any defect in the mode register circuit, based on the plurality of monitoring codes, wherein each of the write mode register sets includes: a storing circuit suitable for storing an operational code according to a mode register write command; and an output control circuit suitable for outputting the stored operational code in the storing circuit as a corresponding setting code, or inverting the stored operational code in the storing circuit to output a corresponding monitoring code, according to a test mode signal.

Abstract: An electronic device includes a masking signal generation circuit configured to generate a test masking signal by receiving a fuse data during a period in which a test masking mode is executed; and a test mode signal generation circuit configured to, when a test command for executing a test in an internal circuit is input, execute the test based on the test masking signal.

Abstract: An electronic device includes a masking signal generation circuit configured to generate a test masking signal by receiving a fuse data during a period in which a test masking mode is executed; and a test mode signal generation circuit configured to, when a test command for executing a test in an internal circuit is input, execute the test based on the test masking signal.

Abstract: An electronic device includes a controller and a semiconductor device. The controller outputs a clock signal and a command signal having a first setting combination or a second setting combination and receives a temperature information signal. The semiconductor device compares an input time of a latch signal generated based on the command signal having the first setting combination with an input time of a temperature output control signal generated internally. In addition, the semiconductor device updates a temperature code according a comparison result of the input times of the temperature output control signal and the latch signal to generate the temperature information signal.

Abstract: According to an embodiment of the present disclosure, a semiconductor memory device includes a first buffer circuit suitable for receiving a command/address signal to output a first buffered signal according to a first control signal; a first setup/hold circuit suitable for delaying the first buffered signal to output an internal command/address signal according to a second control signal; a command decoder suitable for generating a plurality of internal signals by decoding the internal command/address signal according to a third control signal and an internal dock signal; and a timing controller suitable for delaying a dock enable signal to generate the first to third control signals, and controlling the first to third control signals to be deactivated in a first sequence when entering a power-down mode, and to be activated in a second sequence different from is the first sequence when exiting the power-down mode.

Abstract: According to an embodiment of the present disclosure, a semiconductor memory device includes a mode register circuit including a plurality of write mode register sets for providing a plurality of setting codes or a plurality of monitoring codes; and a defect detection circuit suitable for outputting a defect determination signal by detecting any defect in the mode register circuit, based on the plurality of monitoring codes, wherein each of the write mode register sets includes: a storing circuit suitable for storing an operational code according to a mode register write command; and an output control circuit suitable for outputting the stored operational code in the storing circuit as a corresponding setting code, or inverting the stored operational code in the storing circuit to output a corresponding monitoring code, according to a test mode signal.

Abstract: According to an embodiment of the present disclosure, a semiconductor memory device includes a first buffer circuit suitable for receiving a command/address signal to output a first buffered signal according to a first control signal; a first setup/hold circuit suitable for delaying the first buffered signal to output an internal command/address signal according to a second control signal; a command decoder suitable for generating a plurality of internal signals by decoding the internal command/address signal according to a third control signal and an internal dock signal; and a timing controller suitable for delaying a dock enable signal to generate the first to third control signals, and controlling the first to third control signals to be deactivated in a first sequence when entering a power-down mode, and to be activated in a second sequence different from is the first sequence when exiting the power-down mode.

Abstract: An electronic device includes a controller and a semiconductor device. The controller outputs a clock signal and a command signal having a first setting combination or a second setting combination and receives a temperature information signal. The semiconductor device compares an input time of a latch signal generated based on the command signal having the first setting combination with an input time of a temperature output control signal generated internally. In addition, the semiconductor device updates a temperature code according a comparison result of the input times of the temperature output control signal and the latch signal to generate the temperature information signal.

Abstract: A semiconductor device includes an input control circuit and an internal command generation circuit. The input control circuit is synchronized with a first pulse of an internal clock signal to generate an internal chip selection signal and a first internal command/address signal from a chip selection signal and a command/address signal. In addition, the input control circuit is synchronized with a second pulse of the internal clock signal to inhibit generation of the internal chip selection signal. The internal command generation circuit generates a first active command and a second active command which are sequentially enabled when the internal chip selection signal and the first internal command/address signal have a predetermined logic level combination.

Abstract: A semiconductor device includes an input control circuit and an internal command generation circuit. The input control circuit is synchronized with a first pulse of an internal clock signal to generate an internal chip selection signal and a first internal command/address signal from a chip selection signal and a command/address signal. In addition, the input control circuit is synchronized with a second pulse of the internal clock signal to inhibit generation of the internal chip selection signal. The internal command generation circuit generates a first active command and a second active command which are sequentially enabled when the internal chip selection signal and the first internal command/address signal have a predetermined logic level combination.

Abstract: A duty cycle correction circuit may include a data alignment circuit, a correction value generation circuit, and a dock generation circuit. The data alignment circuit may align unit pattern data based on a strobe clock signal. The correction value generation circuit may generate a duty correction value by measuring the amount of charges corresponding to the aligned data. The clock generation circuit may correct the duty ratio of the strobe clock signal based on the duty correction value.

Abstract: A semiconductor system may include a first semiconductor device including a first pad group. The semiconductor system may include a second semiconductor device including a second pad group which is configured for input and output of signals from and to a third semiconductor device. The second semiconductor device may include a selective transfer unit configured to electrically couple the third pad group to the first pad group or to an interface unit electrically coupled to the first pad group, in response to a test mode enable signal.

Abstract: A semiconductor apparatus may include a data alignment block configured to convert parallel type data into rising data and falling data, and output the rising data and the falling data as serial type synchronous data. The semiconductor apparatus may include a driving control block configured to compare levels of respective bits of the serial type synchronous data, and generate a driving control signal. The semiconductor apparatus may include a data output driving block configured to change a driving force in response to the driving control signal, drive the serial type synchronous data with the driving force, and output an output data.

Abstract: A semiconductor apparatus may include a data alignment block configured to convert parallel type data into rising data and falling data, and output the rising data and the falling data as serial type synchronous data. The semiconductor apparatus may include a driving control block configured to compare levels of respective bits of the serial type synchronous data, and generate a driving control signal. The semiconductor apparatus may include a data output driving block configured to change a driving force in response to the driving control signal, drive the serial type synchronous data with the driving force, and output an output data.

Abstract: A semiconductor system may include a first semiconductor device including a first pad group. The semiconductor system may include a second semiconductor device including a second pad group which is configured for input and output of signals from and to a third semiconductor device. The second semiconductor device may include a selective transfer unit configured to electrically couple the third pad group to the first pad group or to an interface unit electrically coupled to the first pad group, in response to a test mode enable signal.