Abstract: A hydroelectric power generation system includes a turbine assembly configured to be submerged under water and adapted to reciprocate in a vertical direction. The turbine assembly includes a turbine impeller having a plurality of blades configured to rotate about a central axis, and a turbine casing arranged surrounding the turbine impeller. The hydroelectric power generation system further includes a generator operatively coupled to the turbine impeller and a prime mover operatively coupling the turbine impeller to the generator. The turbine assembly is configured to slide relative to the prime mover in the vertical direction. The system further includes a displacement mechanism to move the turbine assembly in the vertical direction between a first position and a second position. The turbine impeller rotates in response to the vertical movement of the turbine inside the water, causing the rotation of the prime mover to operate the generator to generate electricity.

Abstract: An electrostatic sprayer operable at high flow rates and low pressures particularly suitable for spray drying. The sprayer includes an elongated body having a downstream spray nozzle assembly through which electrically charged liquid is directed via a central feed tube within the nozzle body and atomizing air is supplied via an annular passage about the liquid feed tube. In one embodiment, the nozzle assembly is an external mix cluster head spray nozzle assembly having a plurality of circumferentially spaced metallic spray tips. In another embodiment, the spray nozzle is an internal mix nozzle assembly having a spray tip with an internal mixing chamber for atomizing liquid prior to discharge.

Abstract: A valve assembly for use with and extending from an underside of a vented manhole cover assembly. The valve assembly is operable between an open position, to enable gas to exit from the manhole, and a closed position, to prevent the flow of the fluid into the manhole. The valve assembly includes a valve body having a first opening and a second opening and a fluid passage extending between the first and second openings. The valve assembly further includes a drain hole extending through the valve body configured to allow fluid drain therethrough. The valve assembly also includes a valve member moveable between the open position and the closed position, such that in response to the fluid entering through the first opening, the valve member moves from the open position to the closed position to prevent the flow of the fluid into the manhole, and wherein in response to fluid draining through the drain hole, the valve member moves from the closed position to the open position.

Abstract: A dental implant includes a screw body and screw threads. The screw body has an apical end and a coronal end. Screw threads include a primary thread and a secondary thread, which overlap in at least a portion of the screw thread. Thread depth progressively increases from the coronal end to the apical end. The coronal end may contain any suitable secondary characteristics, such as machined threads, grooves, micro-threads, or any other characteristics favorable to successful outcomes with dental implant treatment. A method of making such a dental implant is also disclosed.

Abstract: A semiconductor device includes a substrate and a gate dielectric layer on the substrate. The gate dielectric layer includes a single metal oxide layer. The semiconductor device includes a gate electrode stack on the gate dielectric layer. The gate electrode stack includes a metal filling line. The gate electrode stack includes a work function layer covering the sidewall and the bottom surface of the metal filling line. The gate electrode stack includes a capping layer in contact with the gate dielectric layer between sidewalls of the gate dielectric layer and sidewalls of the work function layer. The capping layer includes TaC and at least one of TiN or TaN. The gate electrode stack includes a barrier layer interposed between the capping layer and the sidewalls of the work function layer. The barrier layer comprises TaC and WN, and the barrier layer is in contact with the capping layer.