Abstract: A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

Abstract: A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

Abstract: A process for the manufacture of a semiconductor element includes a stage of rapid heat treatment of a substrate comprising a charge-trapping layer, which is capable of damaging an RF characteristic of the substrate. The rapid heat treatment stage is followed by a healing heat treatment of the substrate between 700° C. and 1,100° C., for a period of time of at least 15 seconds.

Abstract: A process for the manufacture of a semiconductor element includes a stage of rapid heat treatment of a substrate comprising a charge-trapping layer, which is capable of damaging an RF characteristic of the substrate. The rapid heat treatment stage is followed by a healing heat treatment of the substrate between 700° C. and 1100° C., for a period of time of at least 15 seconds.

Abstract: The invention concerns a integrated optical structure comprising a plurality of parts made at least of a dielectric material, stacked according to the levels of integration and defining at least an optical microguide, and further comprising at least an integrated part (15) made of an electrically conductive material, interposed or inserted between at least two of said dielectric parts and having at least one part (11a) externally accessible to said dielectric parts for at least an external electrical connection.

Abstract: The invention concerns a integrated optical structure comprising a plurality of parts made at least of a dielectric material, stacked according to the levels of integration and defining at least an optical microguide, and further comprising at least an integrated part (15) made of an electrically conductive material, interposed or inserted between at least two of said dielectric parts and having at least one part (11a) externally accessible to said dielectric parts for at least an external electrical connection.

Abstract: A semiconductor device includes multiple layers of integrated electronic components, and at least one electrical connection strip defining a fusible strip in one of the layers. An end of the fusible strip is connected to an integrated electronic component. An intermediate electrical connection and heat dissipation structure and a screen are disposed between the fusible strip and the integrated electronic component.