Abstract: Electrooptical light gating methods and apparatus divide pluralities of light gates into distinct groups, each extending along a light gate structure. The light gates are staggered in at least one of these groups relative to light gates in at least another of the groups. At least two of the groups may be arranged on the same light gate structure, and light gates in one of these two groups are then staggered relative to light gates in the other of the two groups on the same light gate structure. On the other hand, at least two of the groups may be arranged on at least two different light gate structures, and light gates on one of the two light gate structures are then staggered relative to light gates on the other of such two light gate structures.

Abstract: Biaxial strain gage and similar systems include or provide a substrate of semiconductor material having cubic unit cells and an absolute value of piezoresistive coefficient in a first direction different from an absolute value of piezoresistive coefficient in a second direction transverse to said first direction. A first strain gage has a dominant dimension oriented in the above mentioned first direction and is diffused into the substrate. A second strain gage has a dominant dimension in the above mentioned second direction and is diffused into the substrate. A pressure responsive diaphragm having a central area displaying essentially symmetrical biaxial strains is provided, and the substrate is attached in said central area to the diaphragm to expose the gages to the biaxial strains.

Abstract: Elongate light gate structures are composed of a plurality of individual chips of electrooptically active light gate material displaying field induced birefringence. The individual chips are provided in rectangular configuration. Each chip has a plurality of alternating electrodes and elongate light gate regions distributed there along. A rigid mounting beam has a pair of spaced parallel elongate mounting surfaces for the light gate chips and an elongate opening located between and extending along these mounting surfaces for the flow of light to or from the mounted chips. The chips may be retained on the rigid beam by chip mounting chips. The chips may be located between polarizer and analyzer filters. Driver circuit boards may be interfaced with and appropriately leveled relative to the mounted chips.

Abstract: Elongate light gate structures are composed of a plurality of individual chips of electrooptically active light gate material displaying field induced birefringence. The individual chips are provided in rectangular configuration. Each chip has a plurality of alternating electrodes and elongate light gate regions distributed there along. A rigid mounting beam has a pair of spaced parallel elongate mounting surfaces for the light gate chips and an elongate opening located between and extending along these mounting surfaces for the flow of light to or from the mounted chips. The chips may be retained on the rigid beam by chip mounting clips. The chips may be located between polarizer and analyzer filters. Driver circuit boards may be interfaced with and appropriately leveled relative to the mounted chips.

Abstract: Electric signals are recorded on a recording medium having a light sensitivity extending to wavelengths shorter than 475 nm, with an array of electrically switched lanthanum modified lead zirconate titanate (PLZT) light gates located between a light polarizer and a complementary light analyzer. The light gates are illuminated through the polarizer with light whose wavelength essentially is longer than 475 nm. Such light is selectively gated through electrically switched light gates through the analyzer and to the recording medium having a light sensitivity extending to wavelengths shorter than 475 nm. Information recordings may be made in this manner over extended periods of time without the typical performance degradation through photoinduced birefringence observed with conventionalPLZT electrooptic shutters.

Abstract: Arrays of first and second electrodes extending in mutual registration on opposite faces of the same substrate to an edge portion thereof are mutually interconnected by a plurality of electrically conductive deposits extending across that edge portion. These conductive deposits are distributed along the edge portion in a pattern including a recurring deposit width smaller than the smallest spacing between any adjacent two electrodes of either of the first and second electrodes, alternating with a recurring deposit spacing smaller than the smallest width of any of the first and second electrodes.