Abstract: A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.

Abstract: A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

Abstract: A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.

Abstract: A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

Abstract: The invention relates to an electro-optical phase modulator with a plurality of elements arranged between two substrates, which\are produced from an optically isotropic material which becomes optically anisotropic when an electrical field is applied, wherein for each of the elements respectively one electrode is arranged on both substrates and the electrodes can be individually controlled at least on one of the substrates.

Abstract: The invention relates to an electro-optical phase modulator with a plurality of elements arranged between two substrates, which are produced from an optically isotropic material which becomes optically anisotropic when an electrical field is applied, wherein for each of the elements respectively one electrode is arranged on both substrates and the electrodes can be individually controlled at least on one of the substrates.

Abstract: In a method for the manufacture of an active matrix OLED display, at least two thin-film transistors and one storage capacitor are provided to drive each pixel, with a reduced number of photolithographic patterning steps.

Abstract: A regulating circuit for driving a display screen pixel having a light-emitting diode includes at least one operational amplifier (11) having a first input (12), a second input (13), and an output (16). A measuring signal (Umess) dependent on the flow of current through a driver transistor of the light-emitting diode is applicable to the first input (12) and a network (15, 15?) consisting of active and/or passive components and at least one capacitor (C) is connected to the second input (13). The network (15, 15?) has a plurality of inputs (U1-Un). A digital reference input signal is applicable to the plurality of inputs (U1-Un), and the output (16) of the operational amplifier (11) is connected to a data line of the pixel.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: In a method for the manufacture of an active matrix OLED display, at least two thin-film transistors and one storage capacitor are provided to drive each pixel, with a reduced number of photolithographic patterning steps.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: A driving circuit for an image point of an image screen which has an organic light-emitting diode includes a capacitor, a feedback coupling, a first thin film transistor as a current-driving transistor for the diode, a second transistor which is connected by a current-conducting electrode with a gate of the first transistor and by a second current-conducting electrode with a data conductor and by its gate electrode with a scanning signal conductor, a third thin film transistor which during driving its gate through a driving conductor taps a diode driving current and an output of the first transistor and supplies a current measuring- and voltage regulating circuit, the current measuring- and voltage regulating circuit providing to the data conductor a voltage signal which is dependent on a current measuring result and a voltage comparison, so that the diode during driving of the gate of the third transistor due to its non-linear switching characteristic acts as a switch for a current deviation in the current m

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrincing semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: A driving circuit for an image point of an image screen which has an organic light-emitting diode includes a capacitor, a feedback coupling, a first thin film transistor as a current-driving transistor for the diode, a second transistor which is connected by a current-conducting electrode with a gate of the first transistor and by a second current-conducting electrode with a data conductor and by its gate electrode with a scanning signal conductor, a third thin film transistor which during driving its gate through a driving conductor taps a diode driving current and an output of the first transistor and supplies a current measuring- and voltage regulating circuit, the current measuring- and voltage regulating circuit providing to the data conductor a voltage signal which is dependent on a current measuring result and a voltage comparison, so that the diode during driving of the gate of the third transistor due to its non-linear switching characteristic acts as a switch for a current deviation in the current m