Abstract: Disclosed are composite build-up materials for the manufacture of printed circuit boards, IC substrates, chip packages and the like. The composite build-up materials are suitable for embedding circuitry such as microvias, trenches and pads. The composite build-up materials comprise a carrier layer (1), a resin layer without reinforcement (2), and a resin layer with reinforcement (3). The circuitry (9) is embedded into the resin layer without reinforcement (2).

Abstract: Disclosed are composite build-up materials for the manufacture of printed circuit boards, IC substrates, chip packages and the like. The composite build-up materials are suitable for embedding active components such as micro chips. The composite build-up materials comprise a carrier layer (1), a resin layer with reinforcement (2), and a resin layer without reinforcement (3). The active component (6) is embedded into the resin layer without reinforcement (6).

Abstract: A microtool for embossing structures into a substrate is fastened to an object, such as a press plate, by sintering, preferably pressure sintering. An insight underlying the invention is the fact that such a sintering or pressure sintering method provides a sufficiently reliable, strong, heat conducting and/or dimensionally stable connection, even for a hot embossing process, where at elevated temperatures, pressures of 10-300 bar and tensile forces of up to 100-200 bar may act upon the connection, and where a dimensional stability of down to the micrometer scale may be required. According to a preferred embodiment, the forming temperature of a pressure sintered connection equals the embossing temperature, i.e. the working temperature of the tool.

Abstract: In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate (1) is provided with metal layers (3, 4) in order to form electrode terminals and with passivation (2), and is exposed to particle irradiation (P) in order to adjust the carrier lifetime. This being the case, at least the metal layer (3) on the irradiation side and the passivation (2) are not applied until after the particle irradiation (P). As a result, a continuous defect region (5), which precludes undesired edge effects, is obtained in the semiconductor substrate (1).

Abstract: In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate (10) is governed by first, unmasked bombardment (14) with an axial profile and by subsequent, second, masked bombardment (15) with a lateral profile, improved reverse characteristics are achieved in that the first, unmasked bombardment is ion bombardment (14) which governs the switching response of the power diode and in that the second, masked bombardment is electron bombardment (15), which reduces the active area of the power diode. In a power diode equipped with such a semiconductor substrate (10), the thermal resistance Rth is reduced in relation to the active area of the power diode.

Abstract: In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate (1) is provided with metal layers (3, 4) in order to form electrode terminals and with passivation (2), and is exposed to particle irradiation (P) in order to adjust the carrier lifetime. This being the case, at least the metal layer (3) on the irradiation side and the passivation (2) are not applied until after the particle irradiation (P). As a result, a continuous defect region (5), which precludes undesired edge effects, is obtained in the semiconductor substrate (1).

Abstract: In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate (10) is governed by first, unmasked bombardment (14) with an axial profile and by subsequent, second, masked bombardment (15) with a lateral profile, improved reverse characteristics are achieved in that the first, unmasked bombardment is ion bombardment (14) which governs the switching response of the power diode and in that the second, masked bombardment is electron bombardment (15), which reduces the active area of the power diode.

Abstract: In a process for adjusting the carrier lifetime in a semiconductor component (1) by means of particle irradiation (P), at least two defect regions (10, 11, 12, 13) are produced in the semiconductor component (1). In this process, a particle beam (P), consisting of particles (a, b, c, d) with at least approximately the same initial energy, is acted on by at least one means (2), before reaching the semiconductor component (1), in such a way that the particles (a, b, c, d) subsequently have different energy values, at least two energy value groups being distinguishable. It is thereby possible, with a single particle irradiation operation, to produce an arbitrary number of defect regions whose arrangement and weighting is arbitrarily selectable.

Abstract: A two-stage method is proposed for producing a highly transparent anode emitter (2) in a GTO (1). In a first step, an anode emitter (2) is indiffused whose thickness is greater than 0.5 .mu.m and whose doping concentration is greater than 10.sup.17 cm.sup.-3. In a second step, the emitter efficiency of the anode emitter (2) is subsequently reduced to a desired degree by local carrier life setting.