Abstract: A wind-powered apparatus for generating electricity as well as to a method for generating electricity by wind power is provided. In order to provide a technology for wind-powered generation of electricity with improved efficiency, a wind-powered apparatus for generating electricity is proposed. The apparatus may have a vertical rotor, a first drive shaft drivable by the vertical rotor, a second drive shaft, an electric generator drivable by the second drive shaft, and a movable lever assembly. The first drive shaft may be operatively connected to the lever assembly for driving the assembly. The lever assembly is operatively connected to the second drive shaft for driving the shaft. The lever assembly may have a lever linkage configured to be able to perform a reciprocating motion between a first reciprocating position and a second reciprocating position without losing the operative connection to the first drive shaft and to the second drive shaft.

Abstract: The present invention relates to a screwless, resilient spectacle joint.

Abstract: The present application relates to a turn-off power semiconductor device having a wafer with an active region and a termination region surrounding the active region, a rubber ring as an edge passivation for the wafer and a gate ring placed on a ring-shaped gate contact on the termination region for contacting the gate electrodes of a thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring. The area consumed by the ring-shaped gate contact on the termination or edge region can be minimized. The upper surface of the gate ring and the upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer.

Abstract: The present application relates to a turn-off power semiconductor device having a wafer with an active region and a termination region surrounding the active region, a rubber ring as an edge passivation for the wafer and a gate ring placed on a ring-shaped gate contact on the termination region for contacting the gate electrodes of a thyristor cell formed in the active region of the wafer. In the turn-off power semiconductor device, the outer circumferential surface of the gate ring is in contact with the rubber ring to define the inner border of the rubber ring. The area consumed by the ring-shaped gate contact on the termination or edge region can be minimized. The upper surface of the gate ring and the upper surface of the rubber ring form a continuous surface extending in a plane parallel to the first main side of the wafer.