Patents by Inventor Norbert Moussy
Norbert Moussy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901395Abstract: A method of forming an insulation structure inside and on top of a first semiconductor substrate, including the steps of: a) forming a trench vertically extending in the first substrate from a first surface of the first substrate; b) filling the trench, from the first surface of the first substrate, with a polysilicon region; c) thinning the first substrate on the side of a second surface of the first substrate, opposite to the first surface, to expose the polysilicon region at the bottom of the trench; d) removing the polysilicon region from the second surface of the first substrate; and e) filling the trench, from the second surface of the first substrate, with a metal.Type: GrantFiled: July 7, 2021Date of Patent: February 13, 2024Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon
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Patent number: 11830891Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.Type: GrantFiled: October 21, 2020Date of Patent: November 28, 2023Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon, Olivier Saxod
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Publication number: 20230343799Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.Type: ApplicationFiled: June 30, 2023Publication date: October 26, 2023Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon, Olivier Saxod
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Publication number: 20220093807Abstract: A SPAD-type photodiode comprising a depletion area in a first portion of a semiconductor substrate of a first conductivity type and further comprising a gate electrically-insulated from the substrate, extending into the substrate from an upper surface of the substrate, and separating the first portion of the substrate from a second portion. The photodiode further comprises a first region of the second conductivity type extending from the upper surface of the substrate into the second portion.Type: ApplicationFiled: September 23, 2021Publication date: March 24, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: François Ayel, Olivier Saxod, Norbert Moussy
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Publication number: 20220013574Abstract: A method of forming an insulation structure inside and on top of a first semiconductor substrate, including the steps of: a) forming a trench vertically extending in the first substrate from a first surface of the first substrate; b) filling the trench, from the first surface of the first substrate, with a polysilicon region; c) thinning the first substrate on the side of a second surface of the first substrate, opposite to the first surface, to expose the polysilicon region at the bottom of the trench; d) removing the polysilicon region from the second surface of the first substrate; and e) filling the trench, from the second surface of the first substrate, with a metal.Type: ApplicationFiled: July 7, 2021Publication date: January 13, 2022Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon
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Publication number: 20210159257Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.Type: ApplicationFiled: October 21, 2020Publication date: May 27, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Cédric Giroud-Garampon, Olivier Saxod
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Publication number: 20200185560Abstract: A SPAD-type photodiode including, in an upper portion of a semiconductor substrate of a first conductivity type, an alternation of vertically stacked regions of the first conductivity type and regions of a second conductivity type, the regions of the first conductivity type being in contact with a same first semiconductor via of the first conductivity type and the regions of the second conductivity type being in contact with a same second semiconductor via of the second conductivity type.Type: ApplicationFiled: December 5, 2019Publication date: June 11, 2020Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Cédric Giroud-Garampon, Norbert Moussy, Olivier Saxod
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Patent number: 10651332Abstract: A SPAD-type photodiode including: a semiconductor substrate of a first conductive type having a front side and a back side; and a first semiconductor region of the second conductivity type extending in the substrate from the front side thereof and towards the back side thereof, the lateral surfaces of the first region being in contact with the substrate and the junction between the lateral surfaces of the first region and the substrate defining an avalanche area of the photodiode.Type: GrantFiled: September 11, 2017Date of Patent: May 12, 2020Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventor: Norbert Moussy
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Publication number: 20190198701Abstract: A SPAD-type photodiode including: a semiconductor substrate of a first conductive type having a front side and a back side; and a first semiconductor region of the second conductivity type extending in the substrate from the front side thereof and towards the back side thereof, the lateral surfaces of the first region being in contact with the substrate and the junction between the lateral surfaces of the first region and the substrate defining an avalanche area of the photodiode.Type: ApplicationFiled: September 11, 2017Publication date: June 27, 2019Applicant: Commissariat a I'Énergie Atomique et aux Énergies AlternativesInventor: Norbert Moussy
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Patent number: 9780247Abstract: A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.Type: GrantFiled: September 29, 2016Date of Patent: October 3, 2017Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Jean-Louis Ouvrier-Buffet
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Patent number: 9741879Abstract: The invention relates to a single-photon avalanche diode (SPAD) photodiode having a layer made of semiconductor material, including an N doped zone and a P doped zone separated by an avalanche zone. The semiconductor material layer is intercalated between a periodic structure and a low index layer having a refractive index less than that of the semiconductor material layer and less than that of the periodic structure. The periodic structure is deposited directly on the semiconductor material layer. The photodiode provides low temporal dispersion and high quantum efficiency, without requiring a strong charge acceleration voltage.Type: GrantFiled: June 10, 2016Date of Patent: August 22, 2017Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent Frey, Norbert Moussy
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Publication number: 20170092801Abstract: A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.Type: ApplicationFiled: September 29, 2016Publication date: March 30, 2017Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Jean-Louis Ouvrier-Buffet
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Publication number: 20160365464Abstract: The invention relates to a SPAD photodiode (100) having a layer made of semiconductor material (110), including an N doped zone (111) and a P doped zone (112) separated by an avalanche zone (113). The semiconductor material layer (110) is intercalated between a periodic structure (120) and a low index layer (130) having a refractive index less than that of the semiconductor material layer and than that of the periodic structure. The periodic structure (120) is deposited directly on the semiconductor material layer. The photodiode thus offers low temporal dispersion and high quantum efficiency, without requiring a strong charge acceleration voltage.Type: ApplicationFiled: June 10, 2016Publication date: December 15, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Laurent FREY, Norbert MOUSSY
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Patent number: 9379158Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.Type: GrantFiled: November 29, 2012Date of Patent: June 28, 2016Assignees: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Xavier Hugon, Norbert Moussy, Jean-Luc Reverchon, Philippe Bois
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Patent number: 9245915Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.Type: GrantFiled: November 3, 2011Date of Patent: January 26, 2016Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Yvon Cazaux, Norbert Moussy
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Patent number: 9202840Abstract: Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.Type: GrantFiled: August 5, 2014Date of Patent: December 1, 2015Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Pierre Gidon, Norbert Moussy
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Publication number: 20150060965Abstract: Photodetecting device comprising: a semiconductor layer doped according to a first type of conductivity; two first semiconductor portions doped according to a second type of conductivity opposed to the first type of conductivity, distinct and separated from one another, and arranged in the semiconductor layer next to one another; a second semiconductor portion doped according to the first type of conductivity with a level of doping greater than that of the semiconductor layer and delimiting, with the semiconductor layer, the first portions by forming p-n junctions, wherein a part of the semiconductor layer separates the first portions such that the depletion zones between the first portions form a potential barrier of which the level is less than the potential of the second portion and of the semiconductor layer.Type: ApplicationFiled: August 5, 2014Publication date: March 5, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Pierre GIDON, Norbert MOUSSY
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Publication number: 20140346356Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.Type: ApplicationFiled: November 29, 2012Publication date: November 27, 2014Applicants: Thales, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Xavier Hugon, Norbert Moussy, Jean-Luc Reverchon, Philippe Bois
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Patent number: 8835924Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.Type: GrantFiled: July 5, 2010Date of Patent: September 16, 2014Assignee: Commissariat a l'energie atomique et aux energies AlternativesInventors: Pierre Gidon, Benoit Giffard, Norbert Moussy
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Publication number: 20130284889Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.Type: ApplicationFiled: November 3, 2011Publication date: October 31, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Yvon Cazaux, Norbert Moussy