Abstract: A device and a method for continuous chemical vapor deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished in that at least one means for manipulation of the flow is present in a flow passage of the gas lock. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: A device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The invention relates to a device and a method for continuous chemical vapor deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The invention relates to a method for continuous coating of substrates, in which the substrates are transported continuously through a deposition chamber and, at the same time, measures are adopted for reducing parasitic deposits as well as possible. Likewise, the invention relates to a corresponding device for continuous coating of substrates.

Abstract: The invention relates to a retaining device for substrates to be coated, which device comprises a contact surface for the substrate to be coated. The retaining device is for example configured as a plate on which the substrate rests and which has one or more apertures, e.g. drilled holes, grooves etc. has, through which a pressure gradient can be set between the face of the substrate and the opposite face of the retaining device. In this way a temporary fixing of the substrate by suction onto the retaining device is possible. The invention also relates to a method for coating a substrate which uses the retaining device according to the invention.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished in that at least one means for manipulation of the flow is present in a flow passage of the gas lock. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: The invention relates to a device and a method for continuous chemical vapour deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.

Abstract: A method for the manufacture of large area silicon crystal bodies suitable for use in the manufacture of solar cells wherein silicon powder having a small grain size is used as the starting material. This powder is compressed to form a thin layer in a suitable form, the form having at least a surface composed of silicon or a silicon compound. The form is filled to a depth approximating the final dimensions of the article. The powder is sintered in the form, and the compressed, sintered layer is converted into a self-supporting silicon foil. This foil is melted partially up to at least half its thickness and recrystallized in a two-stage temperature treatment. The melting occurs by means of a single-sided energy irradiation. The silicon foil is not deteriorated in terms of its mechanical stability and shaped by means of the single-sided, optical type heating.