Patents by Inventor Norbert Stadter

Norbert Stadter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942926
    Abstract: A protection circuit for a semiconductor switch has a gate that can be controlled by a gate driver. The protection circuit includes an integrator for detecting a gate charge of the gate and a comparator unit for switching off the semiconductor switch in dependence on the value of the gate charge relative to a reference charge.
    Type: Grant
    Filed: February 17, 2020
    Date of Patent: March 26, 2024
    Assignee: Siemens Aktiengesellschaft
    Inventor: Norbert Stadter
  • Patent number: 11881845
    Abstract: A protective circuit for a semiconductor switch includes a clamp diode, an NPN bipolar transistor, a PNP bipolar transistor, a capacitor connected in parallel with the base-emitter path of the PNP bipolar transistor, and at least three resistors. The bipolar transistors are connected to a thyristor structure that is connected to the cathode of the clamp diode. A first resistor is connected in parallel with the base-emitter path of the NPN bipolar transistor. A first terminal of the second resistor is connected to the base of the PNP bipolar transistor. Either a third resistor is connected in parallel with the base-emitter path of the PNP bipolar transistor, or a first terminal of the third resistor is connected to the emitter of the PNP bipolar transistor and the second terminal of the third resistor is connected to the second terminal of the second resistor.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: January 23, 2024
    Assignee: Siemens Aktiengesellschaft
    Inventor: Norbert Stadter
  • Patent number: 11444616
    Abstract: A semiconductor switch device includes a switchable power semiconductor and a control circuit. The semiconductor switch device has a current sink and a current amplifier designed to amplify during a switching process a partial current of the total current flowing across the control capacitor that is not discharged by the current sink up to an adjustable maximum current and to apply the amplified partial current to the control electrode of the power semiconductor so as to counteract the change in the voltage across the collector-emitter path or the drain-source path of the power semiconductor during the switching process. An additional circuit provides an adapted switch-on transition by smoothing the collector voltage and/or the drain voltage of the switchable power semiconductor when switching over the collector-emitter path or the drain-source path of the power semiconductor from a blocked state into a conductive state.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: September 13, 2022
    Assignee: Siemens Aktiengesellschaft
    Inventors: Bastian Krümmer, Andreas Kunert, Norbert Stadter
  • Publication number: 20220209767
    Abstract: A semiconductor switch device includes a switchable power semiconductor and a control circuit. The semiconductor switch device has a current sink and a current amplifier designed to amplify during a switching process a partial current of the total current flowing across the control capacitor that is not discharged by the current sink up to an adjustable maximum current and to apply the amplified partial current to the control electrode of the power semiconductor so as to counteract the change in the voltage across the collector-emitter path or the drain-source path of the power semiconductor during the switching process. An additional circuit provides an adapted switch-on transition by smoothing the collector voltage and/or the drain voltage of the switchable power semiconductor when switching over the collector-emitter path or the drain-source path of the power semiconductor from a blocked state into a conductive state.
    Type: Application
    Filed: March 24, 2020
    Publication date: June 30, 2022
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventors: BASTIAN KRÜMMER, ANDREAS KUNERT, NORBERT STADTER
  • Publication number: 20220200592
    Abstract: A protective circuit for a semiconductor switch includes a clamp diode, an NPN bipolar transistor, a PNP bipolar transistor, a capacitor connected in parallel with the base-emitter path of the PNP bipolar transistor, and at least three resistors. The bipolar transistors are connected to a thyristor structure that is connected to the cathode of the clamp diode. A first resistor is connected in parallel with the base-emitter path of the NPN bipolar transistor. A first terminal of the second resistor is connected to the base of the PNP bipolar transistor. Either a third resistor is connected in parallel with the base-emitter path of the PNP bipolar transistor, or a first terminal of the third resistor is connected to the emitter of the PNP bipolar transistor and the second terminal of the third resistor is connected to the second terminal of the second resistor.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 23, 2022
    Applicant: Siemens Aktiengesellschaft
    Inventor: NORBERT STADTER
  • Publication number: 20220158632
    Abstract: A protection circuit for a semiconductor switch has a gate that can be controlled by a gate driver. The protection circuit includes an integrator for detecting a gate charge of the gate and a comparator unit for switching off the semiconductor switch in dependence on the value of the gate charge relative to a reference charge.
    Type: Application
    Filed: February 17, 2020
    Publication date: May 19, 2022
    Applicant: Siemens Aktiengesellschaft
    Inventor: Norbert Stadter